公开(公告)号：US20150177459A1

公开(公告)日：2015-06-25

申请号：US14560909

申请日：2014-12-04

Applicant: IMEC VZW

Inventor： Joris Van Campenhout ,  Philippe Absil ,  Peter Verheyen

IPC: G02B6/122

CPC classification number: G02B6/124 ,  G02B6/34 ,  G02B6/4214 ,  G02B2006/12061 ,  G02B2006/12104 ,  G02B2006/12107 ,  G02B2006/12147

Abstract: Semiconductor photonics devices for coupling radiation to a semiconductor waveguide are described. An example photonics device comprises a semiconductor-on-insulator substrate comprising a semiconductor substrate, a buried oxide layer positioned on top of the semiconductor substrate, and the semiconductor waveguide on top of the buried oxide layer to which radiation is to be coupled. The example device also comprises a grating coupler positioned on top of the buried oxide layer and configured for coupling incident radiation to the semiconductor waveguide. The semiconductor substrate has a recessed portion at the backside of the semiconductor substrate for receiving incident radiation to be coupled to the semiconductor waveguide via the backside of the semiconductor substrate and the grating coupler.

Abstract translation: 描述了用于将辐射耦合到半导体波导的半导体光子器件。 一种示例性光子器件包括绝缘体上半导体衬底，其包括半导体衬底，位于半导体衬底顶部的掩埋氧化物层，以及辐射将与之耦合的掩埋氧化物层顶部的半导体波导。 示例性器件还包括位于掩埋氧化物层顶部并被配置用于将入射辐射耦合到半导体波导的光栅耦合器。 半导体衬底在半导体衬底的背面具有凹陷部分，用于接收经由半导体衬底和光栅耦合器的背面与半导体波导耦合的入射辐射。

公开(公告)号：US09482816B2

公开(公告)日：2016-11-01

申请号：US14560909

申请日：2014-12-04

Applicant: IMEC VZW

Inventor： Joris Van Campenhout ,  Philippe Absil ,  Peter Verheyen

IPC: G02B6/12 ,  G02B6/124 ,  G02B6/42 ,  G02B6/34

CPC classification number: G02B6/124 ,  G02B6/34 ,  G02B6/4214 ,  G02B2006/12061 ,  G02B2006/12104 ,  G02B2006/12107 ,  G02B2006/12147

Abstract: Semiconductor photonics devices for coupling radiation to a semiconductor waveguide are described. An example photonics device comprises a semiconductor-on-insulator substrate comprising a semiconductor substrate, a buried oxide layer positioned on top of the semiconductor substrate, and the semiconductor waveguide on top of the buried oxide layer to which radiation is to be coupled. The example device also comprises a grating coupler positioned on top of the buried oxide layer and configured for coupling incident radiation to the semiconductor waveguide. The semiconductor substrate has a recessed portion at the backside of the semiconductor substrate for receiving incident radiation to be coupled to the semiconductor waveguide via the backside of the semiconductor substrate and the grating coupler.

Abstract translation: 描述了用于将辐射耦合到半导体波导的半导体光子器件。 一种示例性光子器件包括绝缘体上半导体衬底，其包括半导体衬底，位于半导体衬底顶部的掩埋氧化物层，以及辐射将与之耦合的掩埋氧化物层顶部的半导体波导。 示例性器件还包括位于掩埋氧化物层顶部并被配置用于将入射辐射耦合到半导体波导的光栅耦合器。 半导体衬底在半导体衬底的背面具有凹陷部分，用于接收经由半导体衬底和光栅耦合器的背面与半导体波导耦合的入射辐射。

公开(公告)号：US20220013682A1

公开(公告)日：2022-01-13

申请号：US17370578

申请日：2021-07-08

Applicant: IMEC VZW

Inventor： Ashwyn Srinivasan ,  Peter Verheyen ,  Philippe Absil ,  Joris Van Campenhout

IPC: H01L31/107 ,  H01L31/18

Abstract: A method is provided for fabricating an avalanche photodiode (APD) device, in particular, a separate absorption charge multiplication (SACM) APD device. The method includes forming a first contact region and a second contact region in a semiconductor layer. Further, the method includes forming a first mask layer above at least a first contact region of the semiconductor layer adjacent to the first contact region, and forming a second mask layer above and laterally overlapping the first mask layer. Thereby, a mask window is defined by the first mask layer and the second mask layer, and the first mask layer and/or the second mask layer are formed above a second contact region of the semiconductor layer adjacent to the second contact region. Further, the method includes forming a charge region in the semiconductor layer through the mask window, wherein the charge region is formed between the first contact region and the second contact region, and comprises forming an absorption region on the first contact region using the first mask layer. An APD fabricated by the disclosed method is also provided.

公开(公告)号：US09159860B2

公开(公告)日：2015-10-13

申请号：US14087983

申请日：2013-11-22

Applicant: IMEC

Inventor： Geert Hellings ,  Joris Van Campenhout ,  Peter Verheyen

IPC: H01L31/0232 ,  H01L31/107 ,  H01L31/0224 ,  H01L31/028 ,  H01L31/0352

CPC classification number: H01L31/107 ,  H01L31/022408 ,  H01L31/028 ,  H01L31/03529 ,  Y02E10/547

Abstract: An avalanche photodetector element is disclosed for converting an optical signal to an electrical signal, comprising an input waveguide and a photodetector region, the photodetector region comprising at least one intrinsic region, at least one p-doped region and at least one n-doped region, the doped regions and the at least one intrinsic region forming at least one PIN-junction avalanche photodiode, the input waveguide and the photodetector region being arranged with respect to each other such that the optical signal conducted by the input waveguide is substantially conducted into the photodetector region to the PIN-junction avalanche photodiode, the PIN-junction avalanche photodiode converting the optical signal to an electrical signal, characterized in that the photodetector region comprises more than one p-doped region and/or n-doped region, whereby these p-doped regions and/or n-doped regions are physically arranged as an array.

Abstract translation: 公开了一种用于将光信号转换成电信号的雪崩光电检测器元件，其包括输入波导和光电检测器区域，所述光电检测器区域包括至少一个本征区域，至少一个p掺杂区域和至少一个n掺杂区域 ，掺杂区域和至少一个本征区域形成至少一个PIN结雪崩光电二极管，输入波导和光电检测器区域相对于彼此布置，使得由输入波导传导的光信号基本上进入 光电检测器区域到PIN结雪崩光电二极管，PIN结雪崩光电二极管将光信号转换为电信号，其特征在于光电检测器区域包括多于一个p掺杂区域和/或n掺杂区域，由此这些p 掺杂区域和/或n掺杂区域物理地排列成阵列。

公开(公告)号：US11600735B2

公开(公告)日：2023-03-07

申请号：US17370578

申请日：2021-07-08

Applicant: IMEC VZW

Inventor： Ashwyn Srinivasan ,  Peter Verheyen ,  Philippe Absil ,  Joris Van Campenhout

IPC: H01L31/107 ,  H01L31/18

Abstract: A method is provided for fabricating an avalanche photodiode (APD) device, in particular, a separate absorption charge multiplication (SACM) APD device. The method includes forming a first contact region and a second contact region in a semiconductor layer. Further, the method includes forming a first mask layer above at least a first contact region of the semiconductor layer adjacent to the first contact region, and forming a second mask layer above and laterally overlapping the first mask layer. Thereby, a mask window is defined by the first mask layer and the second mask layer, and the first mask layer and/or the second mask layer are formed above a second contact region of the semiconductor layer adjacent to the second contact region. Further, the method includes forming a charge region in the semiconductor layer through the mask window, wherein the charge region is formed between the first contact region and the second contact region, and comprises forming an absorption region on the first contact region using the first mask layer. An APD fabricated by the disclosed method is also provided.

公开(公告)号：US20140138787A1

公开(公告)日：2014-05-22

申请号：US14087983

申请日：2013-11-22

Applicant: IMEC

Inventor： Geert Hellings ,  Joris Van Campenhout ,  Peter Verheyen

IPC: H01L31/107 ,  H01L31/0232

CPC classification number: H01L31/107 ,  H01L31/022408 ,  H01L31/028 ,  H01L31/03529 ,  Y02E10/547

Abstract: An avalanche photodetector element is disclosed for converting an optical signal to an electrical signal, comprising an input waveguide and a photodetector region, the photodetector region comprising at least one intrinsic region, at least one p-doped region and at least one n-doped region, the doped regions and the at least one intrinsic region forming at least one PIN-junction avalanche photodiode, the input waveguide and the photodetector region being arranged with respect to each other such that the optical signal conducted by the input waveguide is substantially conducted into the photodetector region to the PIN-junction avalanche photodiode, the PIN-junction avalanche photodiode converting the optical signal to an electrical signal, characterized in that the photodetector region comprises more than one p-doped region and/or n-doped region, whereby these p-doped regions and/or n-doped regions are physically arranged as an array.

Abstract translation: 公开了一种用于将光信号转换成电信号的雪崩光电检测器元件，其包括输入波导和光电检测器区域，所述光电检测器区域包括至少一个本征区域，至少一个p掺杂区域和至少一个n掺杂区域 ，掺杂区域和至少一个本征区域形成至少一个PIN结雪崩光电二极管，输入波导和光电检测器区域相对于彼此布置，使得由输入波导传导的光信号基本上进入 光电检测器区域到PIN结雪崩光电二极管，PIN结雪崩光电二极管将光信号转换为电信号，其特征在于光电检测器区域包括多于一个p掺杂区域和/或n掺杂区域，由此这些p 掺杂区域和/或n掺杂区域物理地排列成阵列。