公开(公告)号：US20240015984A1

公开(公告)日：2024-01-11

申请号：US18349046

申请日：2023-07-07

Applicant: IMEC VZW

Inventor： Mihaela Ioana Popovici ,  Jasper Bizindavyi ,  Jan Van Houdt ,  Romain Delhougne

IPC: H10B53/30 ,  H10B51/30 ,  H01L21/28 ,  H01L29/51 ,  H01L29/66 ,  H01L29/78

CPC classification number: H10B53/30 ,  H10B51/30 ,  H01L29/40111 ,  H01L29/516 ,  H01L29/6684 ,  H01L29/78391

Abstract: The present disclosure generally relates to a ferroelectric device, and more particularly to a ferroelectric device including a layer stack. According to embodiments, the ferroelectric device comprises a first electrode and a second electrode, and the layer stack arranged between the first electrode and the second electrode. The layer stack comprises a titanium oxide layer, a doped HZO layer arranged on the titanium oxide layer, and a niobium oxide layer arranged on the doped HZO layer.

公开(公告)号：US20240188304A1

公开(公告)日：2024-06-06

申请号：US18526150

申请日：2023-12-01

Applicant: IMEC VZW ,  KATHOLIEKE UNIVERSITEIT LEUVEN

Inventor： Jan Van Houdt ,  Shankha Mukherjee ,  Sergiu Clima ,  Jasper Bizindavyi

IPC: H10B53/30 ,  H01L21/28

CPC classification number: H10B53/30 ,  H01L28/60 ,  H01L29/40111

Abstract: The disclosure relates to a capacitive memory structure (10), comprising: a substrate (11); a first metallic layer (12) on the substrate; a ferroelectric material layer (13) on the first metallic layer (12); wherein the ferroelectric material layer (13) is electrically excitable to two polarization states, each polarization state representing a memory state of the capacitive memory structure (10). The capacitive memory structure (10) further comprises a second metallic layer (14) on the ferroelectric material layer (13); wherein the first metallic layer (12) and the second metallic layer (14) have different work functions.

公开(公告)号：US20230200078A1

公开(公告)日：2023-06-22

申请号：US18065335

申请日：2022-12-13

Applicant: IMEC VZW

Inventor： Mihaela Ioana Popovici ,  Jan Van Houdt ,  Amey Mahadev Walke ,  Gouri Sankar Kar ,  Jasper Bizindavyi

IPC: H10B51/00 ,  H01L29/786 ,  H01L27/12 ,  C23C16/455

CPC classification number: H01L27/11585 ,  C23C16/45536 ,  H01L27/1222 ,  H01L28/60 ,  H01L29/7869

Abstract: Example embodiments relate to ferroelectric devices. An example ferroelectric device layer structure includes a first electrode. The ferroelectric device layer structure also includes a second electrode. Additionally, the ferroelectric device layer structure includes a ferroelectric layer of hafnium zirconate (HZO). Further, the ferroelectric device layer structure includes an oxide layer of Nb2O5 or Ta2O5 arranged on the ferroelectric layer. The ferroelectric layer and the oxide layer are arranged between the first electrode and the second electrode.