公开(公告)号：US09531371B2

公开(公告)日：2016-12-27

申请号：US14570592

申请日：2014-12-15

Applicant: IMEC VZW

Inventor： Alessio Spessot ,  Moon Ju Cho

IPC: H03K3/011 ,  H03K17/16 ,  H03K17/14 ,  H03K17/687 ,  G01R31/26

CPC classification number: H03K17/165 ,  G01R31/2621 ,  H03K3/011 ,  H03K17/145 ,  H03K17/687

Abstract: A method for at least partially compensating for a change in threshold voltage level of a FET transistor induced by OFF-state stress degradation includes determining a signal indicative of a change in threshold voltage level of the FET with respect to a reference threshold voltage level, and applying a restoration signal to the FET. This restoration signal is adapted for shifting the threshold voltage level of the FET in a direction having opposite sign with respect to the change in threshold voltage level. Applying the restoration signal further includes taking into account the signal indicative of the change in threshold voltage level.

Abstract translation: 用于至少部分地补偿由关态状态应力劣化引起的FET晶体管的阈值电压电平的变化的方法包括：确定指示FET相对于参考阈值电压电平的阈值电压电平变化的信号;以及 向FET施加恢复信号。 该恢复信号适于相对于阈值电压电平的变化沿着具有相反符号的方向移动FET的阈值电压电平。 应用恢复信号还包括考虑指示阈值电压电平变化的信号。

公开(公告)号：US20150171857A1

公开(公告)日：2015-06-18

申请号：US14570592

申请日：2014-12-15

Applicant: IMEC VZW

Inventor： Alessio Spessot ,  Moon Ju Cho

IPC: H03K17/16 ,  H03K17/687

CPC classification number: H03K17/165 ,  G01R31/2621 ,  H03K3/011 ,  H03K17/145 ,  H03K17/687

Abstract: A method for at least partially compensating for a change in threshold voltage level of a FET transistor induced by OFF-state stress degradation includes determining a signal indicative of a change in threshold voltage level of the FET with respect to a reference threshold voltage level, and applying a restoration signal to the FET. This restoration signal is adapted for shifting the threshold voltage level of the FET in a direction having opposite sign with respect to the change in threshold voltage level. Applying the restoration signal further includes taking into account the signal indicative of the change in threshold voltage level.

Abstract translation: 用于至少部分地补偿由关态状态应力劣化引起的FET晶体管的阈值电压电平的变化的方法包括：确定指示FET相对于参考阈值电压电平的阈值电压电平变化的信号;以及 向FET施加恢复信号。 该恢复信号适于相对于阈值电压电平的变化沿着具有相反符号的方向移动FET的阈值电压电平。 应用恢复信号还包括考虑指示阈值电压电平变化的信号。