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公开(公告)号：US11012628B2
公开(公告)日：2021-05-18
申请号：US16677184
申请日：2019-11-07
Applicant: IMEC VZW
Inventor： Maarten Rosmeulen , Pierre Boulenc , Piet De Moor
Abstract: A device for time delay and integration imaging comprises: an array of pixels being arranged in rows and columns extending in a first and second direction, respectively. Pixels may accumulate generated charges in response to received electro-magnetic radiation along each column. The rows comprise at least one lateral charge shifting row to selectively shift accumulated charges in a column to an adjacent column and a controller configured to receive at least two angle correction input values. Each angle correction input value is based on a received intensity of electro-magnetic radiation on a measurement line, wherein the at least two angle correction input values are acquired by measurement lines extending in directions defining different angles in relation to the second direction, wherein the controller is configured to, based on the received at least two angle correction input values, control activation of the at least one lateral charge shifting row.
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Patent Agency Ranking
公开(公告)号：US20220059604A1
公开(公告)日：2022-02-24
申请号：US17400247
申请日：2021-08-12
Applicant: IMEC VZW
Inventor： Pierre Boulenc , Jiwon Lee
IPC: H01L27/148
Abstract: Example embodiments relate to image sensors for time delay and integration imaging and methods for imaging using an array of photo-sensitive elements. One example image sensor for time delay and integration imaging includes an array of photo-sensitive elements that includes a plurality of photo-sensitive elements arranged in rows and columns of the array. Each photo-sensitive element includes an active layer configured to generate charges in response o incident light on the active layer. Each photo-sensitive element also includes a charge transport layer. Further, each photo-sensitive element includes at least a first and a second gate, each separated by a dielectric material from the charge transport layer. The array of photo-sensitive elements is configured such that the second gate of a first photo-sensitive element and the first gate of a second photo-sensitive element in a direction along a column of the array are configured to control transfer of charges.
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公开(公告)号：US11699720B2
公开(公告)日：2023-07-11
申请号：US17400247
申请日：2021-08-12
Applicant: IMEC VZW
Inventor： Pierre Boulenc , Jiwon Lee
IPC: H01L27/148 , H01L27/146
CPC classification number: H01L27/14856 , H01L27/148 , H01L27/14603 , H01L27/14806
Abstract: Example embodiments relate to image sensors for time delay and integration imaging and methods for imaging using an array of photo-sensitive elements. One example image sensor for time delay and integration imaging includes an array of photo-sensitive elements that includes a plurality of photo-sensitive elements arranged in rows and columns of the array. Each photo-sensitive element includes an active layer configured to generate charges in response to incident light on the active layer. Each photo-sensitive element also includes a charge transport layer. Further, each photo-sensitive element includes at least a first and a second gate, each separated by a dielectric material from the charge transport layer. The array of photo-sensitive elements is configured such that the second gate of a first photo-sensitive element and the first gate of a second photo-sensitive element in a direction along a column of the array are configured to control transfer of charges.
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公开(公告)号：US11647641B2
公开(公告)日：2023-05-09
申请号：US17113095
申请日：2020-12-06
Applicant: IMEC VZW
Inventor： Jiwon Lee , Pierre Boulenc , Kris Myny
CPC classification number: H10K39/32 , H01L27/14614 , H04N25/50 , H04N25/79 , H01L27/14641 , H01L27/14649 , H10K19/20 , H10K30/152
Abstract: A photo-sensitive device comprises: an active layer configured to generate charges in response to incident light; a charge transport layer arranged below the active layer, wherein the charge transport layer comprises a first portion and a second portion being laterally displaced in relation to the first portion; a gate separated by a dielectric material from the charge transport layer, wherein said gate is arranged below the first portion and configured to control a potential thereof; and a transfer gate, which is separated by a dielectric material from a transfer portion of the charge transport layer between the first portion and the second portion, wherein the transfer gate is configured to control transfer of accumulated charges in the first portion to the second portion for read-out of detected light.
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公开(公告)号：US12205973B2
公开(公告)日：2025-01-21
申请号：US17572817
申请日：2022-01-11
Applicant: IMEC VZW
Inventor： Jiwon Lee , Kris Myny , Florian De Roose , Pierre Boulenc
IPC: H01L27/146
Abstract: An image sensor comprises at least two vertically stacked photo-sensitive devices wherein each respective photo-sensitive device comprises a stack of a top electrode, a first charge transport layer and an active layer. Each respective stack generates electrical charges in response to a corresponding predefined range of wavelengths of light incident on the image sensor.
Each photo-sensitive device further comprises a second charge transport layer having a first portion, vertically aligned underneath the active layer, and a second portion, transfer region, protruding laterally to extend beyond the active layer. A dielectric layer separates the first portion from a bottom electrode providing a voltage for depleting the first portion, and the transfer region from a transfer gate providing a voltage for transferring the generated electrical charge to a floating electrical connection, shared by all stacked photo-sensitive devices.
The floating electrical connection couples to a read-out-circuitry.-
公开(公告)号：US20220223643A1
公开(公告)日：2022-07-14
申请号：US17572817
申请日：2022-01-11
Applicant: IMEC VZW
Inventor： Jiwon Lee , Kris Myny , Florian De Roose , Pierre Boulenc
IPC: H01L27/146
Abstract: An image sensor comprises at least two vertically stacked photo-sensitive devices wherein each respective photo-sensitive device comprises a stack of a top electrode, a first charge transport layer and an active layer. Each respective stack generates electrical charges in response to a corresponding predefined range of wavelengths of light incident on the image sensor.
Each photo-sensitive device further comprises a second charge transport layer having a first portion, vertically aligned underneath the active layer, and a second portion, transfer region, protruding laterally to extend beyond the active layer. A dielectric layer separates the first portion from a bottom electrode providing a voltage for depleting the first portion, and the transfer region from a transfer gate providing a voltage for transferring the generated electrical charge to a floating electrical connection, shared by all stacked photo-sensitive devices.
The floating electrical connection couples to a read-out-circuitry.
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