Imaging device and electronic apparatus

    公开(公告)号:US12230654B2

    公开(公告)日:2025-02-18

    申请号:US18372431

    申请日:2023-09-25

    Inventor: Takashi Machida

    Abstract: An imaging device that smoothly transfers electric charges from a photoelectric converter to a transfer destination is provided. This imaging device includes: a semiconductor layer; a photoelectric converter that generates electric charges corresponding to a received light amount; and a transfer section that includes a first trench gate and a second trench gate and transfers the electric charges from the photoelectric converter to a single transfer destination via the first trench gate and the second trench gate, the first trench gate and the second trench gate each extending from the front surface to the back surface of the semiconductor layer into the photoelectric converter. The first trench gate has a first length from the front surface to the photoelectric converter, and the second trench gate has a second length from the front surface to the photoelectric converter, the second length being shorter than the first length.

    Sensor with low power synchronous readout

    公开(公告)号:US12155948B2

    公开(公告)日:2024-11-26

    申请号:US17774878

    申请日:2020-11-10

    Applicant: APPLE INC.

    Abstract: Various implementations disclosed herein include devices, systems, and methods that buffer events in device memory during synchronous readout of a plurality of frames by a sensor. Various implementations disclosed herein include devices, systems, and methods that disable a sensor communication link until the buffered events are sufficient for transmission by the sensor. In some implementations, the sensor using a synchronous readout may select a readout mode for one or more frames based on how many of the pixels are detecting events. In some implementations, a first mode that reads out only data for a low percentage of pixels that have events uses the device memory and a second mode bypasses the device memory based on accumulation criteria such as high percentage of pixels detecting events. In the second mode, less data per pixel may be readout.

    SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURE

    公开(公告)号:US20240373145A1

    公开(公告)日:2024-11-07

    申请号:US18769709

    申请日:2024-07-11

    Abstract: An image sensor includes a photosensitive sensor, a floating diffusion node, a reset transistor, and a source follower transistor. The reset transistor comprises a first source/drain coupled to the floating diffusion node and a second source/drain coupled to a first voltage source. The source follower transistor comprises a gate coupled to the floating diffusion node and a first source/drain coupled to the second source/drain of the reset transistor. A first elongated contact contacts the second source/drain of the reset transistor and the first source/drain of the source follower transistor. The first elongated contact has a first dimension in a horizontal cross-section and a second dimension in the horizontal cross-section. The second dimension is perpendicular to the first dimension, and the second dimension is less than the first dimension.

    PHOTOSITE CIRCUIT USING SWITCHED OPERATIONAL PHASES

    公开(公告)号:US20240334078A1

    公开(公告)日:2024-10-03

    申请号:US18699933

    申请日:2021-10-19

    Applicant: TriEye Ltd.

    CPC classification number: H04N25/50 H04N25/77 H04N25/78

    Abstract: Techniques are disclosed to accurately measure the integration or accumulation of charge measured by photosite readout circuitry due to a photodiode generated current, which is generated by a photodiode as a result of impinging light reflected onto the photodiode that forms part of an imaging sensor. The techniques described herein address shortcomings of photosite operation by using a series of sequential switching states that function to maintain the charge accumulated during idle sampling times between active detection windows.

    Image sensor with selective pixel readout, operating method thereof, and electronic device including the same

    公开(公告)号:US12058461B2

    公开(公告)日:2024-08-06

    申请号:US17850073

    申请日:2022-06-27

    CPC classification number: H04N25/75 H03M1/1205 H04N25/40 H04N25/50 H04N25/709

    Abstract: Disclosed are an image sensor, an operating method thereof, and an electronic device including the image sensor. The image sensor includes a pixel array including a plurality of pixels, a first selection/read-out circuit, a second selection/read-out circuit, and a controller provided to select a pixel of the pixel array and control the first and second selection/read-out circuits to read out information of the selected pixel. The first selection/read-out circuit provides a signal for selecting a pixel of the pixel array in a first direction, reads out a plurality of pixel signals received from the pixel array in a direction corresponding to the first direction, and the second selection/read-out circuit provides a signal for selecting a pixel of the pixel array in a second direction, and reads out a plurality of pixel signals received from the pixel array in a direction corresponding to the second direction.

Patent Agency Ranking