公开(公告)号：US20130237005A1

公开(公告)日：2013-09-12

申请号：US13869764

申请日：2013-04-24

Applicant: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE

Inventor： Teng-Yu WANG ,  Chien-Hsun CHEN ,  Chen-Hsun DU ,  Chung-Yuan KUNG

IPC: H01L31/18 ,  H01L21/20

CPC classification number: H01L31/18 ,  H01L21/20 ,  H01L31/02363 ,  H01L31/068 ,  Y02E10/52 ,  Y02E10/547

Abstract: The disclosure provides a method for fabricating a semiconductor layer having a textured surface, including: (a) providing a textured substrate; (b) forming at least one semiconductor layer on the textured substrate; (c) forming a metal layer on the semiconductor layer; and (d) conducting a thermal process or a low temperature process to the textured substrate, the semiconductor layer and the metal layer, wherein the semiconductor layer is separated from the textured substrate by the thermal process to obtain the semiconductor layer having the metal layer and a textured surface.

Abstract translation: 本公开提供了一种用于制造具有纹理表面的半导体层的方法，包括：（a）提供纹理化衬底; （b）在纹理化衬底上形成至少一个半导体层; （c）在半导体层上形成金属层; 和（d）对纹理化衬底，半导体层和金属层进行热处理或低温工艺，其中半导体层通过热处理与纹理化衬底分离，以获得具有金属层的半导体层和 纹理表面。

公开(公告)号：US20130174903A1

公开(公告)日：2013-07-11

申请号：US13781653

申请日：2013-02-28

Applicant: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE

Inventor： Der Chin WU ,  Jui-Chung SHIAO ,  Wei-Chih HSU ,  Chien-Hsun CHEN

IPC: H01L31/072

CPC classification number: H01L31/072 ,  H01L31/02245 ,  H01L31/0682 ,  H01L31/0747 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

Abstract: A solar cell is disclosed. A substrate includes a first surface and a second surface, wherein the substrate is of a first type. A through hole passes through the substrate, wherein the substrate includes a third surface in the through hole. An insulating layer is on the third surface in the through hole and extends to be over the second surface of the substrate. A first thin film semiconductor layer is disposed on the first surface of the substrate, wherein the first thin film semiconductor layer is of a first type. A transparent conductive layer is on the first thin film semiconductor layer. A through hole connection layer is disposed in the through hole and extends to be over the first surface and the second surface of the substrate.

Abstract translation: 公开了一种太阳能电池。 衬底包括第一表面和第二表面，其中衬底是第一类型的。 通孔穿过衬底，其中衬底在通孔中包括第三表面。 绝缘层位于通孔的第三表面上并且延伸到衬底的第二表面之上。 第一薄膜半导体层设置在基板的第一表面上，其中第一薄膜半导体层是第一类型。 透明导电层位于第一薄膜半导体层上。 通孔连接层设置在通孔中并延伸到衬底的第一表面和第二表面之上。