THERMAL DECOMPOSITION APPARATUS AND THERMAL DECOMPOSITION  METHOD APPLYING THE SAME

    公开(公告)号:US20240213396A1

    公开(公告)日:2024-06-27

    申请号:US18392621

    申请日:2023-12-21

    IPC分类号: H01L31/18 B32B43/00

    CPC分类号: H01L31/1876 B32B43/006

    摘要: A thermal decomposition apparatus includes a heating zone, a cooling zone, a first conveying mechanism and a second conveying mechanism. The heating zone has a first space, a first inlet and a first outlet. The first inlet and the first outlet are located at two opposite sides of the first space. The cooling zone has a second space, a second inlet and a second outlet. The second inlet is selectively in space communication connection with the first outlet of the heating zone. The first conveying mechanism is at least partially disposed in the first space. The second conveying mechanism includes a carrier disposed in the second space. The carrier has an inclined surface. A position of the inclined surface located close to the second inlet is higher than a position of the inclined surface located close to the second outlet along a gravity direction.

    DISMANTLING DEVICE FOR FRAME OF PV MODULE

    公开(公告)号:US20220094299A1

    公开(公告)日:2022-03-24

    申请号:US17134807

    申请日:2020-12-28

    IPC分类号: H02S30/10 H02S99/00

    摘要: The disclosed embodiments relate to a dismantling device configured for a frame of a PV module. The dismantling device includes a connection portion, a first holding portion, and a second holding portion. The first holding portion is connected to the connection portion and configured to press against one of an inner wall and outer wall of the frame. The second holding portion is slidably disposed on the connection portion and movably closer to or away from the first holding portion along a sliding direction. The second holding portion is configured to press against the other one of the inner wall and the outer wall so as to clamp the frame with the first holding portion and to distort the frame.

    RECYCLE APPARATUS FOR PHOTOVOLTAIC MODULE

    公开(公告)号:US20210138520A1

    公开(公告)日:2021-05-13

    申请号:US17072349

    申请日:2020-10-16

    IPC分类号: B09B3/00 B09B5/00

    摘要: The disclosure provides a recycle apparatus. The recycle apparatus is configured to separate a back sheet and a glass sheet assembly of a photovoltaic module. The recycle apparatus includes a conveyor, a flattening device, and a cutting tool. The conveyor includes a first roller and a second roller opposite to each other. The flattening device is located aside the first roller and the second roller. The cutting tool is located aside the flattening device. The flattening device is located between the first roller and the second roller of the conveyor and the cutting tool. The first roller and the second roller is configured to clamp the photovoltaic module and to feed the photovoltaic module to the flattening device configured to flatten the photovoltaic module and to the cutting tool configured to separate the back sheet from the glass sheet assembly.

    METHOD FOR FABRICATING SEMICONDUCTOR LAYER HAVING TEXTURED SURFACE AND METHOD FOR FABRICATING SOLAR CELL
    4.
    发明申请
    METHOD FOR FABRICATING SEMICONDUCTOR LAYER HAVING TEXTURED SURFACE AND METHOD FOR FABRICATING SOLAR CELL 有权
    用于制造具有纹理表面的半导体层的方法和用于制造太阳能电池的方法

    公开(公告)号:US20130237005A1

    公开(公告)日:2013-09-12

    申请号:US13869764

    申请日:2013-04-24

    IPC分类号: H01L31/18 H01L21/20

    摘要: The disclosure provides a method for fabricating a semiconductor layer having a textured surface, including: (a) providing a textured substrate; (b) forming at least one semiconductor layer on the textured substrate; (c) forming a metal layer on the semiconductor layer; and (d) conducting a thermal process or a low temperature process to the textured substrate, the semiconductor layer and the metal layer, wherein the semiconductor layer is separated from the textured substrate by the thermal process to obtain the semiconductor layer having the metal layer and a textured surface.

    摘要翻译: 本公开提供了一种用于制造具有纹理表面的半导体层的方法,包括:(a)提供纹理化衬底; (b)在纹理化衬底上形成至少一个半导体层; (c)在半导体层上形成金属层; 和(d)对纹理化衬底,半导体层和金属层进行热处理或低温工艺,其中半导体层通过热处理与纹理化衬底分离,以获得具有金属层的半导体层和 纹理表面。