公开(公告)号：US20180350932A1

公开(公告)日：2018-12-06

申请号：US15778304

申请日：2015-12-23

Applicant: INTEL CORPORATION

Inventor： EN-SHAO LIU ,  JOODONG PARK ,  CHEN-GUAN LEE ,  JUI-YEN LIN ,  CHIA-HONG Jan

IPC: H01L29/423 ,  H01L29/49 ,  H01L21/3213 ,  H01L29/66 ,  H01L21/764

CPC classification number: H01L29/42376 ,  B82Y10/00 ,  H01L21/32133 ,  H01L21/764 ,  H01L29/0673 ,  H01L29/0847 ,  H01L29/4238 ,  H01L29/42392 ,  H01L29/4991 ,  H01L29/513 ,  H01L29/66439 ,  H01L29/66469 ,  H01L29/6653 ,  H01L29/66545 ,  H01L29/66553 ,  H01L29/6656 ,  H01L29/66659 ,  H01L29/775 ,  H01L29/785 ,  H01L29/78696

Abstract: Techniques are disclosed for forming a transistor with one or more additional spacers, or inner-gate spacers, as referred to herein. The additional spacers may be formed between the gate and original spacers to reduce the parasitic coupling between the gate and the source/drain, for example. In some cases, the additional spacers may include air gaps and/or dielectric material (e.g., low-k dielectric material). In some cases, the gate may include a lower portion, a middle portion, and an upper portion. In some such cases, the lower and upper portions of the gate may be wider between the original spacers than the middle portion of the gate, which may be as a result of the additional spacers being located between the middle portion of the gate and the original spacers. In some such cases, the gate may approximate an I-shape, -shape, -shape, ⊥-shape, L-shape, or J-shape, for example.

公开(公告)号：US20200006509A1

公开(公告)日：2020-01-02

申请号：US16569879

申请日：2019-09-13

Applicant: INTEL CORPORATION

Inventor： EN-SHAO LIU ,  JOODONG PARK ,  CHEN-GUAN LEE ,  JUI-YEN LIN ,  CHIA-HONG Jan

IPC: H01L29/423 ,  H01L29/66 ,  H01L29/49 ,  H01L21/3213 ,  H01L21/764

Abstract: Techniques are disclosed for forming a transistor with one or more additional spacers, or inner-gate spacers, as referred to herein. The additional spacers may be formed between the gate and original spacers to reduce the parasitic coupling between the gate and the source/drain, for example. In some cases, the additional spacers may include air gaps and/or dielectric material (e.g., low-k dielectric material). In some cases, the gate may include a lower portion, a middle portion, and an upper portion. In some such cases, the lower and upper portions of the gate may be wider between the original spacers than the middle portion of the gate, which may be as a result of the additional spacers being located between the middle portion of the gate and the original spacers. In some such cases, the gate may approximate an I-shape, C-shape, -shape, ⊥-shape, L-shape, or ┘-shape, for example.

公开(公告)号：US20180374927A1

公开(公告)日：2018-12-27

申请号：US15778306

申请日：2015-12-23

Applicant: INTEL CORPORATION

Inventor： EN-SHAO LIU ,  JOODONG PARK ,  CHEN-GUAN LEE ,  CHIA-HONG Jan

IPC: H01L29/49 ,  H01L29/78 ,  H01L29/66 ,  H01L21/764 ,  H01L21/28

CPC classification number: H01L29/4991 ,  H01L21/28088 ,  H01L21/28114 ,  H01L21/764 ,  H01L29/0649 ,  H01L29/0673 ,  H01L29/401 ,  H01L29/42372 ,  H01L29/42376 ,  H01L29/42392 ,  H01L29/4966 ,  H01L29/6653 ,  H01L29/66545 ,  H01L29/66553 ,  H01L29/66659 ,  H01L29/66795 ,  H01L29/775 ,  H01L29/785 ,  H01L29/7851 ,  H01L29/78696

Abstract: Techniques are disclosed for forming a transistor with one or more additional gate spacers. The additional spacers may be formed between the gate and original gate spacers to reduce the parasitic coupling between the gate and the source/drain, for example. In some cases, the additional spacers may include air gaps and/or dielectric material (e.g., low-k dielectric material). In some cases, the gate may include a lower portion and an upper portion. In some such cases, the lower portion of the gate may be narrower in width between the original gate spacers than the upper portion of the gate, which may be as a result of the additional spacers being located between the lower portion of the gate and the original gate spacers. In some such cases, the gate may approximate a “T” shape or various derivatives of that shape such as -shape or -shape, for example.