公开(公告)号：US20200066645A1

公开(公告)日：2020-02-27

申请号：US16324087

申请日：2016-09-30

Applicant: INTEL CORPORATION

Inventor： Jason A. FARMER ,  Jeffrey S. LEIB ,  Michael L. MCSWINEY ,  Harsono S. SIMKA ,  Daniel B. BERGSTROM

IPC: H01L23/532 ,  H01L21/285 ,  H01L21/768 ,  H01L23/522

Abstract: Embodiments of the invention include a microelectronic device that includes a substrate having a layer of dielectric material that includes a feature with a depression, a Tungsten containing barrier liner layer formed in the depression of the feature, and a Cobalt conductive layer deposited on the Tungsten containing barrier liner layer in the depression of the feature. The Tungsten containing barrier liner layer provides adhesion for the Cobalt conductive layer.

公开(公告)号：US20190252511A1

公开(公告)日：2019-08-15

申请号：US15772783

申请日：2015-12-09

Applicant: Intel Corporation

Inventor： Scott B. CLENDENNING ,  Han Wui THEN ,  John J. PLOMBON ,  Michael L. MCSWINEY

IPC: H01L29/49 ,  H01L27/088 ,  H01L21/285 ,  H01L23/532

CPC classification number: H01L29/4966 ,  C23C16/30 ,  H01L21/28088 ,  H01L21/28556 ,  H01L21/76843 ,  H01L23/53209 ,  H01L23/53223 ,  H01L23/53238 ,  H01L23/53252 ,  H01L23/53266 ,  H01L27/0886

Abstract: Embodiments of the present disclosure describe semiconductor devices with ruthenium phosphorus thin films and further describe the processes to deposit the thin films. The thin films may be deposited in a gate stack of a transistor device or in an interconnect structure. The processes to deposit the films may include chemical vapor deposition and may include ruthenium precursors. The precursors may contain phosphorus. A co-reactant may be used during deposition. A co-reactant may include a phosphorus based compound. A gate material may be deposited on the film in a gate stack. The ruthenium phosphorus film may be a metal diffusion barrier and an adhesion layer, and the film may be a work function metal for some embodiments. Other embodiments may be described and/or claimed.