公开(公告)号：US20170084487A1

公开(公告)日：2017-03-23

申请号：US15126575

申请日：2014-06-16

Applicant: Intel Corporation

Inventor： Ramanan V. CHEBIAM ,  Christopher J. JEZEWSKI ,  Tejaswi K. INDUKURI ,  James S. CLARKE ,  John J. PLOMBON

IPC: H01L21/768 ,  H01L23/522 ,  H01L23/532

CPC classification number: H01L23/5226 ,  H01L21/321 ,  H01L21/76807 ,  H01L21/76838 ,  H01L21/76882 ,  H01L21/76883 ,  H01L23/53209 ,  H01L23/53242 ,  H01L23/53257 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Embodiments of the present disclosure describe removing seams and voids in metal interconnects and associated techniques and configurations. In one embodiment, a method includes conformally depositing a metal into a recess disposed in a dielectric material to form an interconnect, wherein conformally depositing the metal creates a seam or void in the deposited metal within or directly adjacent to the recess and heating the metal in the presence of a reactive gas to remove the seam or void, wherein the metal has a melting point that is greater than a melting point of copper. Other embodiments may be described and/or claimed.

公开(公告)号：US20180138054A1

公开(公告)日：2018-05-17

申请号：US15570968

申请日：2015-06-17

Applicant: Intel Corporation

Inventor： Patricio E. ROMERO ,  John J. PLOMBON

IPC: H01L21/3213 ,  H01L21/768 ,  H01L23/522 ,  H01L23/528 ,  H01L21/28 ,  H01L23/532 ,  H01L43/12

CPC classification number: H01L21/32135 ,  H01L21/28079 ,  H01L21/76802 ,  H01L21/76834 ,  H01L21/76883 ,  H01L23/5226 ,  H01L23/528 ,  H01L23/53209 ,  H01L27/222 ,  H01L43/02 ,  H01L43/08 ,  H01L43/12

Abstract: Transition metal dry etch by atomic layer removal of oxide layers for device fabrication, and the resulting devices, are described. In an example, a method of etching a film includes reacting a surface layer of a transition metal species of a transition metal-containing film with a molecular oxidant species. The method also includes removing volatile fragments of the reacted molecular oxidant species to provide an oxidized surface layer of the transition metal species. The method also includes reacting the oxidized surface layer of the transition metal species with a molecular etchant. The method also includes removing the reacted oxidized surface layer of the transition metal species and the reacted molecular etchant by volatlilization.

公开(公告)号：US20190252511A1

公开(公告)日：2019-08-15

申请号：US15772783

申请日：2015-12-09

Applicant: Intel Corporation

Inventor： Scott B. CLENDENNING ,  Han Wui THEN ,  John J. PLOMBON ,  Michael L. MCSWINEY

IPC: H01L29/49 ,  H01L27/088 ,  H01L21/285 ,  H01L23/532

CPC classification number: H01L29/4966 ,  C23C16/30 ,  H01L21/28088 ,  H01L21/28556 ,  H01L21/76843 ,  H01L23/53209 ,  H01L23/53223 ,  H01L23/53238 ,  H01L23/53252 ,  H01L23/53266 ,  H01L27/0886

Abstract: Embodiments of the present disclosure describe semiconductor devices with ruthenium phosphorus thin films and further describe the processes to deposit the thin films. The thin films may be deposited in a gate stack of a transistor device or in an interconnect structure. The processes to deposit the films may include chemical vapor deposition and may include ruthenium precursors. The precursors may contain phosphorus. A co-reactant may be used during deposition. A co-reactant may include a phosphorus based compound. A gate material may be deposited on the film in a gate stack. The ruthenium phosphorus film may be a metal diffusion barrier and an adhesion layer, and the film may be a work function metal for some embodiments. Other embodiments may be described and/or claimed.

公开(公告)号：US20190088593A1

公开(公告)日：2019-03-21

申请号：US16046870

申请日：2018-07-26

Applicant: Intel Corporation

Inventor： Ramanan V. CHEBIAM ,  Christopher J. JEZEWSKI ,  Tejaswi K. INDUKURI ,  James S. CLARKE ,  John J. PLOMBON

IPC: H01L23/522 ,  H01L21/321 ,  H01L23/532 ,  H01L21/768

Abstract: Embodiments of the present disclosure describe removing seams and voids in metal interconnects and associated techniques and configurations. In one embodiment, a method includes conformally depositing a metal into a recess disposed in a dielectric material to form an interconnect, wherein conformally depositing the metal creates a seam or void in the deposited metal within or directly adjacent to the recess and heating the metal in the presence of a reactive gas to remove the seam or void, wherein the metal has a melting point that is greater than a melting point of copper. Other embodiments may be described and/or claimed.