公开(公告)号：US08847397B2

公开(公告)日：2014-09-30

申请号：US13737263

申请日：2013-01-09

Applicant: Intermolecular, Inc.

Inventor： Sandra G. Malhotra ,  Hanhong Chen ,  Wim Deweerd ,  Arthur Gevondyan ,  Hiroyuki Ode

IPC: H01L29/40 ,  H01L23/52 ,  H01L23/48 ,  H01L29/92 ,  H01L49/02 ,  H01L51/52

CPC classification number: H01L29/92 ,  H01L28/65 ,  H01L28/75 ,  H01L51/0021 ,  H01L51/5206

Abstract: Provided are MIM DRAM capacitors and methods of forming thereof. A MIM DRAM capacitor may include an electrode layer formed from a high work function material (e.g., greater than about 5.0 eV). This layer may be used to reduce the leakage current through the capacitor. The capacitor may also include another electrode layer having a high conductivity base portion and a conductive metal oxide portion. The conductive metal oxide portion serves to promote the growth of the high k phase of the dielectric layer.

Abstract translation: 提供MIM DRAM电容器及其形成方法。 MIM DRAM电容器可以包括由高功函数材料（例如，大于约5.0eV）形成的电极层。 该层可用于减少通过电容器的漏电流。 电容器还可以包括具有高导电性基底部分和导电金属氧化物部分的另一个电极层。 导电金属氧化物部分用于促进电介质层的高k相的生长。

公开(公告)号：US09224878B2

公开(公告)日：2015-12-29

申请号：US13727962

申请日：2012-12-27

Applicant: Intermolecular, Inc. ,  Elpida Memory, Inc

Inventor： Sandra G. Malhotra ,  Hanhong Chen ,  Wim Deweerd ,  Arthur Gevondyan ,  Hiroyuki Ode

IPC: H01L21/20 ,  H01L29/92 ,  H01L49/02 ,  H01L51/52 ,  H01L51/00

CPC classification number: H01L29/92 ,  H01L28/65 ,  H01L28/75 ,  H01L51/0021 ,  H01L51/5206

Abstract: Provided are MIM DRAM capacitors and methods of forming thereof. A MIM DRAM capacitor may include an electrode layer formed from a high work function material (e.g., greater than about 5.0 eV). This layer may be used to reduce the leakage current through the capacitor. The capacitor may also include another electrode layer having a high conductivity base portion and a conductive metal oxide portion. The conductive metal oxide portion serves to promote the growth of the high k phase of the dielectric layer.

Abstract translation: 提供MIM DRAM电容器及其形成方法。 MIM DRAM电容器可以包括由高功函数材料（例如，大于约5.0eV）形成的电极层。 该层可用于减少通过电容器的漏电流。 电容器还可以包括具有高导电性基底部分和导电金属氧化物部分的另一个电极层。 导电金属氧化物部分用于促进电介质层的高k相的生长。

公开(公告)号：US20140187016A1

公开(公告)日：2014-07-03

申请号：US13727962

申请日：2012-12-27

Applicant: INTERMOLECULAR, INC. ,  ELPIDA MEMORY, INC

Inventor： Sandra G. Malhotra ,  Hanhong Chen ,  Wim Deweerd ,  Arthur Gevondyan ,  Hiroyuki Ode

IPC: H01L49/02

CPC classification number: H01L29/92 ,  H01L28/65 ,  H01L28/75 ,  H01L51/0021 ,  H01L51/5206

Abstract: Provided are MIM DRAM capacitors and methods of forming thereof. A MIM DRAM capacitor may include an electrode layer formed from a high work function material (e.g., greater than about 5.0 eV). This layer may be used to reduce the leakage current through the capacitor. The capacitor may also include another electrode layer having a high conductivity base portion and a conductive metal oxide portion. The conductive metal oxide portion serves to promote the growth of the high k phase of the dielectric layer.

公开(公告)号：US20140183697A1

公开(公告)日：2014-07-03

申请号：US13737263

申请日：2013-01-09

Applicant: INTERMOLECULAR, INC.

Inventor： Sandra G. Malhotra ,  Hanhong Chen ,  Wim Deweerd ,  Arthur Gevondyan ,  Hiroyuki Ode

IPC: H01L29/92

CPC classification number: H01L29/92 ,  H01L28/65 ,  H01L28/75 ,  H01L51/0021 ,  H01L51/5206

Abstract: Provided are MIM DRAM capacitors and methods of forming thereof. A MIM DRAM capacitor may include an electrode layer formed from a high work function material (e.g., greater than about 5.0 eV). This layer may be used to reduce the leakage current through the capacitor. The capacitor may also include another electrode layer having a high conductivity base portion and a conductive metal oxide portion. The conductive metal oxide portion serves to promote the growth of the high k phase of the dielectric layer.

Abstract translation: 提供MIM DRAM电容器及其形成方法。 MIM DRAM电容器可以包括由高功函数材料（例如，大于约5.0eV）形成的电极层。 该层可用于减少通过电容器的漏电流。 电容器还可以包括具有高导电性基底部分和导电金属氧化物部分的另一个电极层。 导电金属氧化物部分用于促进电介质层的高k相的生长。