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公开(公告)号:US20210183789A1
公开(公告)日:2021-06-17
申请号:US16792905
申请日:2020-02-18
Applicant: Industrial Technology Research Institute
Inventor: Te-Hsun Lin , Chen-Tsai Yang , Kuan-Chu Wu , Shao-An Yan
IPC: H01L23/00 , H01L23/31 , H01L23/538
Abstract: A chip package structure including a substrate, a redistribution layer (RDL), a chip and an encapsulant is provided. The RDL is disposed on the substrate. The chip is disposed on the RDL and is electrically connected with the RDL. The encapsulant is disposed on the RDL and encapsulates the chip. The chip is located in the high stress region. From a top view, the chip is located in the high stress region, and the low stress region surrounds the high stress region. The RDL includes at least one first device located in the high stress region. From the top view, the extending direction of the at least one first device is parallel to a stress direction at a position thereof.
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公开(公告)号:US11362045B2
公开(公告)日:2022-06-14
申请号:US16792905
申请日:2020-02-18
Applicant: Industrial Technology Research Institute
Inventor: Te-Hsun Lin , Chen-Tsai Yang , Kuan-Chu Wu , Shao-An Yan
IPC: H01L23/00 , H01L23/538 , H01L23/31 , H01L23/14 , H01L23/498
Abstract: A chip package structure including a substrate, a redistribution layer (RDL), a chip and an encapsulant is provided. The RDL is disposed on the substrate. The chip is disposed on the RDL and is electrically connected with the RDL. The encapsulant is disposed on the RDL and encapsulates the chip. The chip is located in the high stress region. From a top view, the chip is located in the high stress region, and the low stress region surrounds the high stress region. The RDL includes at least one first device located in the high stress region. From the top view, the extending direction of the at least one first device is parallel to a stress direction at a position thereof.
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公开(公告)号:US20190013378A1
公开(公告)日:2019-01-10
申请号:US15691755
申请日:2017-08-31
Inventor: Tai-Jui Wang , Chieh-Wei Feng , Meng-Jung Yang , Wei-Han Chen , Shao-An Yan , Tsu-Chiang Chang
IPC: H01L27/32
CPC classification number: H01L27/3276 , H01L27/1218 , H01L27/124 , H01L27/1255 , H01L27/1262 , H01L27/3262 , H01L27/3265 , H01L27/3272 , H01L2227/323
Abstract: A pixel structure including a substrate, a power wire, a planarization layer, a drive circuit and a conductive structure is provided. The substrate has a layout area and a light-transmitting area located outside the layout area. The power wire is disposed on the layout area of the substrate. The power wire includes a shielding layer. The planarization layer is disposed on the substrate and covers the power wire. The drive circuit is disposed on the planarization layer and corresponds to the layout area. The drive circuit includes a first active device. The shielding layer overlaps with the first active device. The conductive structure is disposed in the planarization layer and distributed corresponding to the layout area. The power wire is electrically connected with the drive circuit through the conductive structure. A display panel is also provided.
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公开(公告)号:US11251115B1
公开(公告)日:2022-02-15
申请号:US17144144
申请日:2021-01-08
Applicant: Industrial Technology Research Institute
Inventor: Shao-An Yan , Chieh-Wei Feng , Tzu-Yang Ting , Tzu-Hao Yu , Chien-Hsun Chu , Jui-Wen Yang , Hsin-Cheng Lai
IPC: H01L23/498 , H01L21/48 , G06F30/3308 , G06F119/18
Abstract: A redistribution structure including a first redistribution layer is provided. The first redistribution layer includes a dielectric layer; at least one conductive structure located in the dielectric layer, wherein the at least one conductive structure has a width L; and at least one dummy structure located adjacent to the at least one conductive structure and located in the dielectric layer, and the at least one dummy structure has a width D, wherein there is a gap width S between the at least one dummy structure and the at least one conductive structure, and a degree of planarization DOP of the first redistribution layer is greater than or equal to 95%, wherein DOP=[1−(h/T)]*100%, and h refers to a difference between a highest height and a lowest height of a top surface of the dielectric layer; and T refers to a thickness of the at least one conductive structure.
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公开(公告)号:US10418435B2
公开(公告)日:2019-09-17
申请号:US15691755
申请日:2017-08-31
Inventor: Tai-Jui Wang , Chieh-Wei Feng , Meng-Jung Yang , Wei-Han Chen , Shao-An Yan , Tsu-Chiang Chang
Abstract: A pixel structure including a substrate, a power wire, a planarization layer, a drive circuit and a conductive structure is provided. The substrate has a layout area and a light-transmitting area located outside the layout area. The power wire is disposed on the layout area of the substrate. The power wire includes a shielding layer. The planarization layer is disposed on the substrate and covers the power wire. The drive circuit is disposed on the planarization layer and corresponds to the layout area. The drive circuit includes a first active device. The shielding layer overlaps with the first active device. The conductive structure is disposed in the planarization layer and distributed corresponding to the layout area. The power wire is electrically connected with the drive circuit through the conductive structure. A display panel is also provided.
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公开(公告)号:US09960245B1
公开(公告)日:2018-05-01
申请号:US15458984
申请日:2017-03-15
Applicant: Industrial Technology Research Institute
Inventor: Tai-Jui Wang , Tsu-Chiang Chang , Chieh-Wei Feng , Shao-An Yan , Wei-Han Chen
IPC: H01L29/76 , H01L29/423 , H01L29/786 , H01L29/66 , H01L29/417
CPC classification number: H01L29/42384 , H01L29/41733 , H01L29/66757 , H01L29/78675 , H01L29/78696
Abstract: A transistor device including a semiconductor material layer, a gate layer, and an insulation layer between the gate layer and the semiconductor material layer is provided. The semiconductor material layer includes a first conductive portion, a second conductive portion, a channel portion between the first conductive portion and the second conductive portion, and a first protruding portion formed integrally. The channel portion has a first boundary adjacent to the first conductive portion, a second boundary adjacent to the second conductive portion, a third boundary, and a fourth boundary. The third boundary and the fourth boundary connect the terminals of the first boundary and the second boundary. The first protruding portion is protruded outwardly from the third boundary of the channel portion. The first gate boundary and the second gate boundary are overlapped with the first boundary and the second boundary of the channel portion.
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