公开(公告)号：US20180269845A1

公开(公告)日：2018-09-20

申请号：US15460297

申请日：2017-03-16

Applicant: Infineon Technologies AG

Inventor： Bayaner Arigong ,  Richard Wilson ,  Haedong Jang ,  Frank Trang ,  Timothy Canning ,  Rongguo Zhou

IPC: H03H7/20 ,  H01L29/78

CPC classification number: H03H7/20 ,  H01L29/7816 ,  H03H7/18 ,  H03H7/19 ,  H03H11/20

Abstract: A phase shifter includes first and second RF terminals, a reference potential terminal; a lumped element LC network connected to the first and second RF terminals and the reference potential terminal, and first and second active semiconductor devices connected to the lumped element LC network and to the reference potential terminal. Each of the first and second active semiconductor devices include a control terminal and first and second output terminals. The lumped element LC network presents a reactance across the first and second RF terminals that shifts the phase of an RF signal as between the first and second RF terminals. The first and second active semiconductor devices are configured to tune the phase shift of the RF signal by controlling the reactance across the first and second RF terminals.

公开(公告)号：US20190165753A1

公开(公告)日：2019-05-30

申请号：US15823155

申请日：2017-11-27

Applicant: Infineon Technologies AG

Inventor： Bayaner Arigong ,  Haedong Jang ,  Richard Wilson ,  Frank Trang ,  Qianli Mu ,  EJ Hashimoto

IPC: H03H7/40 ,  H03F3/24 ,  H03F3/193 ,  H03F1/56 ,  H03H11/30 ,  H03F1/02

Abstract: An amplifier circuit includes a first port, a second port, a reference potential port, and an RF amplifier device having a first terminal electrically coupled to the first port, a second terminal electrically coupled to the second port, and a reference potential terminal electrically coupled to the reference potential port. The RF amplifier device amplifies an RF signal across an RF frequency range that includes a fundamental RF frequency. An impedance matching network is electrically coupled to the first terminal and the first port. The impedance matching network includes a baseband termination circuit that presents low impedance in a baseband frequency region, a fundamental frequency matching circuit that presents a complex conjugate of an intrinsic impedance of the RF amplifier device in the RF frequency range, and a second order harmonic termination circuit that presents low impedance at second order harmonics of frequencies in the fundamental RF frequency range.

公开(公告)号：US10236833B2

公开(公告)日：2019-03-19

申请号：US15667195

申请日：2017-08-02

Applicant: Infineon Technologies AG

Inventor： Bayaner Arigong ,  Richard Wilson ,  Haedong Jang ,  Frank Trang ,  Timothy Canning ,  Rongguo Zhou ,  Bjoern Herrmann

IPC: H03F3/14 ,  H03F1/56 ,  H03F3/195 ,  H01L23/66

Abstract: An RF package includes a metal flange, an RF input lead, an RF output lead, and an electrically conductive die attach area. An RF transistor that is configured to amplify an RF signal is mounted in the die attach area. The RF transistor includes an input terminal that is electrically coupled to the RF input lead, an output terminal that is electrically coupled to the RF output lead, and a reference potential terminal that is electrically connected to the die attach area. A first capacitor having one or more upper metal plates, and a dielectric region is mounted in the die attach area and is electrically coupled to the RF transmission path of the RF signal. The first capacitor is configured to simultaneously match an impedance of the RF transistor at a fundamental frequency of the RF signal and to filter a higher order harmonic of the fundamental frequency.

公开(公告)号：US20190044483A1

公开(公告)日：2019-02-07

申请号：US15667195

申请日：2017-08-02

Applicant: Infineon Technologies AG

Inventor： Bayaner Arigong ,  Richard Wilson ,  Haedong Jang ,  Frank Trang ,  Timothy Canning ,  Rongguo Zhou ,  Bjoern Herrmann

IPC: H03F1/56 ,  H03F3/195 ,  H01L23/66

Abstract: An RF package includes a metal flange, an RF input lead, an RF output lead, and an electrically conductive die attach area. An RF transistor that is configured to amplify an RF signal is mounted in the die attach area. The RF transistor includes an input terminal that is electrically coupled to the RF input lead, an output terminal that is electrically coupled to the RF output lead, and a reference potential terminal that is electrically connected to the die attach area. A first capacitor having one or more upper metal plates, and a dielectric region is mounted in the die attach area and is electrically coupled to the RF transmission path of the RF signal. The first capacitor is configured to simultaneously match an impedance of the RF transistor at a fundamental frequency of the RF signal and to filter a higher order harmonic of the fundamental frequency.

公开(公告)号：US20190149117A1

公开(公告)日：2019-05-16

申请号：US16225615

申请日：2018-12-19

Applicant: Infineon Technologies AG

Inventor： Bayaner Arigong ,  Richard Wilson ,  Haedong Jang ,  Frank Trang ,  Timothy Canning ,  Rongguo Zhou

IPC: H03H7/20 ,  H03H11/20 ,  H01L29/78 ,  H03H7/18 ,  H03H7/19

Abstract: A phase shifter having a four port hybrid coupler is provided. The four port hybrid coupler has first and second input ports and first and second output ports. The four port hybrid coupler is configured to shift the phase of an RF signal as between the first and second input ports. First and second active semiconductor devices are connected to first and second output ports. The first and second active semiconductor devices are configured to change the phase shift of the RF signal as between the first and second input ports based upon a varying voltage

公开(公告)号：US10181833B2

公开(公告)日：2019-01-15

申请号：US15460297

申请日：2017-03-16

Applicant: Infineon Technologies AG

Inventor： Bayaner Arigong ,  Richard Wilson ,  Haedong Jang ,  Frank Trang ,  Timothy Canning ,  Rongguo Zhou

IPC: H03H7/20 ,  H01L29/78 ,  H03H7/18 ,  H03H7/19

Abstract: A phase shifter includes first and second RF terminals, a reference potential terminal; a lumped element LC network connected to the first and second RF terminals and the reference potential terminal, and first and second active semiconductor devices connected to the lumped element LC network and to the reference potential terminal. Each of the first and second active semiconductor devices include a control terminal and first and second output terminals. The lumped element LC network presents a reactance across the first and second RF terminals that shifts the phase of an RF signal as between the first and second RF terminals. The first and second active semiconductor devices are configured to tune the phase shift of the RF signal by controlling the reactance across the first and second RF terminals.