公开(公告)号：US20200286730A1

公开(公告)日：2020-09-10

申请号：US16811192

申请日：2020-03-06

Applicant: Infineon Technologies AG

Inventor： Iris MODER ,  Bernhard GOLLER ,  Tobias Franz Wolfgang HOECHBAUER ,  Roland RUPP ,  Francisco Javier SANTOS RODRIGUEZ ,  Hans-Joachim SCHULZE

IPC: H01L21/02 ,  H01L21/475 ,  H01L21/4757

Abstract: A semiconductor substrate includes a base portion, an auxiliary layer and a surface layer. The auxiliary layer is formed on the base portion. The surface layer is formed on the auxiliary layer. The surface layer is in contact with a first main surface of the semiconductor substrate. The auxiliary layer has a different electrochemical dissolution efficiency than the base portion and the surface layer. At least a portion of the auxiliary layer and at least a portion of the surface layer are converted into a porous structure. Subsequently, an epitaxial layer is formed on the first main surface.

公开(公告)号：US20240153759A1

公开(公告)日：2024-05-09

申请号：US18407025

申请日：2024-01-08

Applicant: Infineon Technologies AG

Inventor： Iris MODER ,  Bernhard GOLLER ,  Tobias Franz Wolfgang HOECHBAUER ,  Roland RUPP ,  Francisco Javier SANTOS RODRIGUEZ ,  Hans-Joachim SCHULZE

IPC: H01L21/02 ,  H01L21/467 ,  H01L21/475 ,  H01L21/4757 ,  H01L29/739 ,  H01L29/78

CPC classification number: H01L21/02203 ,  H01L21/0203 ,  H01L21/02293 ,  H01L21/02378 ,  H01L21/467 ,  H01L21/475 ,  H01L21/47576 ,  H01L29/7395 ,  H01L29/7802

Abstract: A semiconductor substrate includes a base portion, an auxiliary layer and a surface layer. The auxiliary layer is formed on the base portion. The surface layer is formed on the auxiliary layer. The surface layer is in contact with a first main surface of the semiconductor substrate. The auxiliary layer has a different electrochemical dissolution efficiency than the base portion and the surface layer. At least a portion of the auxiliary layer and at least a portion of the surface layer are converted into a porous structure. Subsequently, an epitaxial layer is formed on the first main surface.

公开(公告)号：US20220359194A1

公开(公告)日：2022-11-10

申请号：US17869524

申请日：2022-07-20

Applicant: Infineon Technologies AG

Inventor： Iris MODER ,  Bernhard GOLLER ,  Tobias Franz Wolfgang HOECHBAUER ,  Roland RUPP ,  Francisco Javier SANTOS RODRIGUEZ ,  Hans-Joachim SCHULZE

IPC: H01L21/02 ,  H01L21/4757 ,  H01L21/475 ,  H01L21/467

Abstract: A semiconductor substrate includes a base portion, an auxiliary layer and a surface layer. The auxiliary layer is formed on the base portion. The surface layer is formed on the auxiliary layer. The surface layer is in contact with a first main surface of the semiconductor substrate. The auxiliary layer has a different electrochemical dissolution efficiency than the base portion and the surface layer. At least a portion of the auxiliary layer and at least a portion of the surface layer are converted into a porous structure. Subsequently, an epitaxial layer is formed on the first main surface.