公开(公告)号：US20180375202A1

公开(公告)日：2018-12-27

申请号：US15906126

申请日：2018-02-27

Applicant: InnoLux Corporation

Inventor： I-Yin LI ,  Yi-Hung LIN ,  Chia-Chi HO ,  Li-Wei SUNG ,  Ming-Yen WENG ,  Hung-I TSENG ,  Kuo-Chun LO ,  Charlene SU ,  Ker-Yih KAO

IPC: H01Q1/40 ,  H01Q1/38 ,  H01Q3/44

CPC classification number: H01Q1/40 ,  G02F1/1313 ,  H01Q1/2266 ,  H01Q1/2275 ,  H01Q1/2283 ,  H01Q1/24 ,  H01Q1/241 ,  H01Q1/38 ,  H01Q1/50 ,  H01Q3/44 ,  H01Q9/0407 ,  H01Q9/0457 ,  H01Q13/10

Abstract: A microwave modulation device includes a first radiator, a second radiator and a modulation structure. The first radiator includes a substrate; a metal layer disposed on the substrate; a protective layer disposed on at least a portion of the metal layer and including a through hole overlapping with at least a portion of the metal layer; and an etch stop layer disposed between the metal layer and the protective layer. The second radiator disposed corresponding to the first radiator. The modulation structure is disposed between the first radiator and the second radiator.