公开(公告)号：US20190304794A1

公开(公告)日：2019-10-03

申请号：US16369140

申请日：2019-03-29

Applicant: Innovative Micro Technology

Inventor： Tao Gilbert ,  Sangwoo Kim

IPC: H01L21/308 ,  H01L33/58 ,  H01L31/0232

Abstract: The method described here uses gray scale lithography to form curve surfaces in photoresist. These surfaces can be of arbitrary shape since the remaining resist following exposure and develop is dependent on the exposure dose, which is controlled precisely by the opacity of the photo-mask. The process may include a silicon etch step, followed by a photoresist etch step to form an etching cycle. Each etch cycle may form a pair of substantially orthogonal stepped surfaces, with a characteristic “rise” and “run.”

公开(公告)号：US09493877B1

公开(公告)日：2016-11-15

申请号：US15144735

申请日：2016-05-02

Applicant: Innovative Micro Technology

Inventor： John Harley ,  Jeffery F. Summers ,  Tao Gilbert

IPC: C23F1/02 ,  C23F4/00 ,  C23F1/12 ,  H01J37/32 ,  C23F1/16 ,  C23F1/38 ,  C23F1/44 ,  B81C1/00 ,  G03F7/004

CPC classification number: C23F1/02 ,  B81C1/00531 ,  B81C1/00539 ,  B81C2201/0132 ,  B81C2201/0133 ,  C23F1/16 ,  C23F1/38 ,  C23F1/44 ,  C23F4/00 ,  G03F7/0041 ,  H01J37/32009 ,  H01J2237/334 ,  H01L21/02244 ,  H01L21/31111 ,  H01L21/32134 ,  H01L21/32136 ,  H01L21/32139

Abstract: A method for creating small features in an Al/Ag/Ti multilayer stack is disclosed. The method uses a combination of wet and dry etching techniques to anisotropically etch the layers.

Abstract translation: 公开了一种用于在Al / Ag / Ti多层叠层中形成小特征的方法。 该方法使用湿式和干式蚀刻技术的组合来各向异性地蚀刻层。