公开(公告)号：US11171145B2

公开(公告)日：2021-11-09

申请号：US16016375

申请日：2018-06-22

Applicant: Intel Corporation

Inventor： Sou-Chi Chang ,  Uygar Avci ,  Daniel H. Morris ,  Seiyon Kim ,  Ashish V. Penumatcha ,  Ian A. Young

IPC: H01L27/115 ,  H01L27/11507 ,  H01L49/02 ,  G11C11/22

Abstract: Embodiments herein describe techniques for an integrated circuit (IC). The IC may include a capacitor. The capacitor may include a first electrode, a second electrode, and a paraelectric layer between the first electrode and the second electrode. A first interface with a first work function exists between the paraelectric layer and the first electrode. A second interface with a second work function exists between the paraelectric layer and the second electrode. The paraelectric layer may include a ferroelectric material or an anti-ferroelectric material. A built-in electric field associated with the first work function and the second work function may exist between the first electrode and the second electrode. The built-in electric field may be at a voltage value where the capacitor may operate at a center of a memory window of a polarization-voltage hysteresis loop of the capacitor. Other embodiments may be described and/or claimed.

公开(公告)号：US20230197860A1

公开(公告)日：2023-06-22

申请号：US17560069

申请日：2021-12-22

Applicant: Intel Corporation

Inventor： Carl H. Naylor ,  Kirby Maxey ,  Chelsey Dorow ,  Sudarat Lee ,  Kevin O'Brien ,  Ashish V. Penumatcha ,  Scott B. Clendenning ,  Uygar Avci ,  Matthew Metz

IPC: H01L29/786 ,  H01L29/66

CPC classification number: H01L29/78696 ,  H01L29/66969 ,  H01L29/4908

Abstract: A metal chalcogenide material layer of lower quality provides a transition between a metal chalcogenide material layer of higher quality and a gate insulator material that separates the metal chalcogenide material layers from a gate electrode of a metal-oxide semiconductor field effect transistor (MOSFET) structure. Gate insulator material may be more readily initiated and/or or precisely controlled to a particular thickness when formed on lower quality metal chalcogenide material. Accordingly, such a material stack may be integrated into a variety of transistor structures, including multi-gate, multi-channel nanowire or nanosheet transistor structures.