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公开(公告)号:US09635764B2
公开(公告)日:2017-04-25
申请号:US14866648
申请日:2015-09-25
Applicant: Intel Corporation
Inventor: Shipeng Qiu , Shawna Liff , Kayleen L Helms , Joshua D Heppner , Adel Elsherbini , Johanna Swan , Gary M. Barnes
CPC classification number: H05K1/189 , H05K1/0278 , H05K1/028 , H05K1/036 , H05K1/144 , H05K3/0014 , H05K3/22 , H05K3/303 , H05K3/326 , H05K3/361 , H05K2201/0133 , H05K2201/0308 , H05K2201/041 , H05K2201/047 , H05K2201/057 , H05K2201/10007 , H05K2201/10128 , H05K2203/10 , H05K2203/104 , H05K2203/105 , H05K2203/1105 , H05K2203/1194
Abstract: An integrated circuit that includes a substrate having a shape memory material (SMM), the SMM is in a first deformed state and has a first crystallography structure and a first configuration, the SMM is able to be deformed from a first configuration to a second configuration, the SMM changes to a second crystallography structure and deforms back to the first configuration upon receiving energy, the SMM returns to the first crystallography structure upon receiving a different amount of energy; and an electronic component attached to substrate. In other forms, the SMM is in a first deformed state and has a first polymeric conformation and a first configuration, the SMM changes from a first polymeric conformation to a second polymeric conformation and be deformed from a first configuration to a second configuration, the SMM changes returns to the first polymeric conformation and deforms back to the first configuration upon receiving energy.