公开(公告)号：US20150371872A1

公开(公告)日：2015-12-24

申请号：US14313120

申请日：2014-06-24

Applicant: Intermolecular Inc.

Inventor： John Foster ,  Sean Lin ,  Muthumanickam Sankarapandian ,  Ruilong Xie

IPC: H01L21/3213 ,  H01L21/311

CPC classification number: H01L21/32134 ,  H01L21/28088 ,  H01L21/67086 ,  H01L29/66545

Abstract: Provided are methods for fabricating transistors using a gate last approach. These methods involve etching of titanium nitride and titanium carbide structures while preserving high k-dielectric structures. The titanium carbide structures may also include aluminum. Etching may be performed in one or more etching solutions, each including hydrogen peroxide. Titanium nitride and titanium carbide structures can be etched simultaneously (non-selectively) in the same etching solution that also includes hydrochloric acid, in addition to hydrogen peroxide, and maintained at about 25° C. and 85° C. In some embodiments, titanium nitride structures and titanium carbide structures may be etched separately (selectively) in different operations and using different etching solutions. The titanium nitride structures may be etched in a diluted hydrogen peroxide solution maintained at about 25° C. and 85° C. The titanium carbide structures may be etched in a solution that also includes ammonium hydroxide, in addition to hydrogen peroxide, and maintained at about 25° C.

Abstract translation: 提供了使用门最后方法制造晶体管的方法。 这些方法包括蚀刻氮化钛和碳化钛结构，同时保留高k电介质结构。 碳化钛结构还可以包括铝。 蚀刻可以在一种或多种蚀刻溶液中进行，每种蚀刻溶液包括过氧化氢。 氮化钛和碳化钛结构可以在相同的蚀刻溶液中同时（非选择性地）蚀刻，除了过氧化氢之外还包括盐酸，并保持在约25℃和85℃。在一些实施方案中，钛 氮化物结构和碳化钛结构可以在不同的操作中分别（选择性地）蚀刻并使用不同的蚀刻溶液。 可以在保持在约25℃和85℃的稀释过氧化氢溶液中蚀刻氮化钛结构。可以在除了过氧化氢之外也包括氢氧化铵的溶液中蚀刻碳化钛结构，并保持在 约25°C

公开(公告)号：US09831100B2

公开(公告)日：2017-11-28

申请号：US14313120

申请日：2014-06-24

Applicant: Intermolecular Inc. ,  International Business Machines

Inventor： John Foster ,  Sean Lin ,  Muthumanickam Sankarapandian ,  Ruilong Xie

IPC: H01L21/336 ,  H01L21/3213 ,  H01L21/67 ,  H01L21/28 ,  H01L29/66

CPC classification number: H01L21/32134 ,  H01L21/28088 ,  H01L21/67086 ,  H01L29/66545

Abstract: Provided are methods for fabricating transistors using a gate last approach. These methods involve etching of titanium nitride and titanium carbide structures while preserving high k-dielectric structures. The titanium carbide structures may also include aluminum. Etching may be performed in one or more etching solutions, each including hydrogen peroxide. Titanium nitride and titanium carbide structures can be etched simultaneously (non-selectively) in the same etching solution that also includes hydrochloric acid, in addition to hydrogen peroxide, and maintained at about 25° C. and 85° C. In some embodiments, titanium nitride structures and titanium carbide structures may be etched separately (selectively) in different operations and using different etching solutions. The titanium nitride structures may be etched in a diluted hydrogen peroxide solution maintained at about 25° C. and 85° C. The titanium carbide structures may be etched in a solution that also includes ammonium hydroxide, in addition to hydrogen peroxide, and maintained at about 25° C.

公开(公告)号：US20160181087A1

公开(公告)日：2016-06-23

申请号：US14576554

申请日：2014-12-19

Applicant: Intermolecular Inc. ,  IBM-International Business Machines Corporation

Inventor： John Foster ,  Steven Bentley ,  Sean Lin ,  Dave Rath ,  Muthumanickam Sankarapandian ,  Ruilong Xie

IPC: H01L21/02 ,  B08B3/10 ,  B08B3/08

CPC classification number: H01L21/02068 ,  C11D11/0047 ,  H01L21/02052

Abstract: Particle-clean formulations and methods for semiconductor substrates use aqueous solutions of tetraethylammonium hydroxide (“TEAH,” C8H21NO) with or without hydrogen peroxide (H2O2). The solution pH ranges from 8-12.5. At process temperatures between 20-70 C, the TEAH solutions have been observed to remove particles from silicon-germanium (SiGe) with 20-99% Ge content in 15-300 seconds with very little etching (SiGe etch rates

Abstract translation: 用于半导体衬底的颗粒清洁配方和方法使用具有或不具有过氧化氢（H 2 O 2）的四乙基氢氧化铵（“TEAH”，C 8 H 21 NO）的水溶液。 溶液pH范围为8-12.5。 在20-70℃的工艺温度下，已经观察到TEAH溶液在15-300秒内以非常少的蚀刻（SiGe蚀刻速率<1nm / min）从15-00秒钟内以20-99％Ge含量的硅 - 锗（SiGe）去除颗粒 ）。