公开(公告)号：US09297775B2

公开(公告)日：2016-03-29

申请号：US14285921

申请日：2014-05-23

Applicant: Intermolecular Inc.

Inventor： Edwin Adhiprakasha ,  Sean Barstow ,  Ashish Bodke ,  Zhendong Hong ,  Usha Raghuram ,  Karthik Ramani ,  Vivian Ryan ,  Jingang Su ,  Xunyuan Zhang

IPC: H01L27/20 ,  G01N27/20 ,  C23C14/34 ,  C23C14/54 ,  C23C14/06 ,  G01N27/04

CPC classification number: G01N27/20 ,  C23C14/06 ,  C23C14/14 ,  C23C14/3464 ,  C23C14/54 ,  C23C14/548 ,  G01N27/041

Abstract: Barrier layers, barrier stacks, and seed layers for small-scale interconnects (e.g., copper) are combinatorially screened using test structures sputtered or co-sputtered through apertures of varying size. Various characteristics (e.g., resistivity, crystalline morphology, surface roughness) related to conductivity, diffusion blocking, and adhesion are measured before and/or after annealing and compared to arrive at materials and process parameters for low diffusion with high conductivity through the interconnect. Example results show that some formulations of tantalum-titanium barriers may replace thicker tantalum/tantalum-nitride stacks, in some cases with a Cu—Mn seed layer between the Ta—Ti and copper.

公开(公告)号：US20150338362A1

公开(公告)日：2015-11-26

申请号：US14285921

申请日：2014-05-23

Applicant: Intermolecular Inc.

Inventor： Edwin Adhiprakasha ,  Sean Barstow ,  Ashish Bodke ,  Zhendong Hong ,  Usha Raghuram ,  Karthik Ramani ,  Vivian Ryan ,  Jingang Su ,  Xunyuan Zhang

IPC: G01N27/20 ,  G01N27/04 ,  C23C14/06 ,  C23C14/34 ,  C23C14/54

CPC classification number: G01N27/20 ,  C23C14/06 ,  C23C14/14 ,  C23C14/3464 ,  C23C14/54 ,  C23C14/548 ,  G01N27/041

Abstract: Barrier layers, barrier stacks, and seed layers for small-scale interconnects (e.g., copper) are combinatorially screened using test structures sputtered or co-sputtered through apertures of varying size. Various characteristics (e.g., resistivity, crystalline morphology, surface roughness) related to conductivity, diffusion blocking, and adhesion are measured before and/or after annealing and compared to arrive at materials and process parameters for low diffusion with high conductivity through the interconnect. Example results show that some formulations of tantalum-titanium barriers may replace thicker tantalum/tantalum-nitride stacks, in some cases with a Cu—Mn seed layer between the Ta—Ti and copper.

Abstract translation: 使用通过不同大小的孔溅射或共溅射的测试结构组合地筛选用于小规模互连（例如铜）的阻挡层，阻挡层和种子层。 在退火之前和/或之后测量与导电性，扩散阻挡和粘附有关的各种特性（例如，电阻率，结晶形态，表面粗糙度）并进行比较以获得材料和工艺参数，以通过互连实现高导电性的低扩散。 示例结果表明，一些钽 - 钛屏障的配方可以替代较厚的钽/氮化钽叠层，在某些情况下可以在Ta-Ti和铜之间具有Cu-Mn种子层。

公开(公告)号：US20150021772A1

公开(公告)日：2015-01-22

申请号：US13943418

申请日：2013-07-16

Applicant: Intermolecular Inc.

Inventor： Edwin Adhiprakasha ,  Sandip Niyogi ,  Karthik Ramani ,  Vivian Ryan

IPC: H01L21/768 ,  H01L23/48

CPC classification number: H01L21/2855 ,  C23C14/165 ,  C23C14/3492 ,  C23C14/352 ,  C23C14/5806 ,  H01J37/3408 ,  H01J37/3429 ,  H01L21/76843 ,  H01L23/53238 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A barrier film including at least one ferromagnetic metal (e.g., nickel) and at least one refractory metal (e.g., tantalum) effectively blocks copper diffusion and facilitates uniform contiguous (non-agglomerating) deposition of copper layers less than 100 Å thick. Methods of forming the metal barrier include co-sputtering the component metals from separate targets. Using high-productivity combinatorial (HPC) apparatus and methods, the proportions of the component metals can be optimized. Gradient compositions can be deposited by varying the plasma power or throw distance of the separate targets.

Abstract translation: 包括至少一种铁磁金属（例如镍）和至少一种难熔金属（例如钽）的阻挡膜有效地阻止铜扩散并促进小于100埃的铜层的均匀连续（非聚集）沉积。 形成金属屏障的方法包括从分离的靶共溅射组分金属。 使用高生产率组合（HPC）设备和方法，可以优化组分金属的比例。 可以通过改变分离靶的等离子体功率或投射距离来沉积梯度组合物。