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    Method and apparatus for preventing native oxide regrowth
    1.
    发明授权
    Method and apparatus for preventing native oxide regrowth 有权
    防止天然氧化物再生长的方法和装置

    公开(公告)号：US09373518B2

    公开(公告)日：2016-06-21

    申请号：US14096369

    申请日：2013-12-04

    Applicant: Intermolecular, Inc.

    Inventor： Edwin Adhiprakasha ,  Shuogang Huang

    IPC: C03C15/00 ,  C03C25/68 ,  H01L21/302 ,  H01L21/461 ,  H01L21/3065 ,  H01L21/67

    CPC classification number: H01L21/3065 ,  H01L21/67063 ,  H01L21/6708 ,  H01L21/67086 ,  H01L21/6719

    Abstract: A method for combinatorially processing a substrate is provided. The method includes introducing a first etchant into a reactor cell and introducing a fluid into the reactor cell while the first etchant remains in the reactor cell. After initiating the introducing the fluid, contents of the reactor cell are removed through a first removal line and a second removal line, wherein the first removal line extends farther into the reactor cell than the second removal line. A level of the fluid above an inlet to the first removal line is maintained while removing the contents. A second etchant is introduced into the reactor cell while removing the contents through the first removal line and the second removal line. The method includes continuing the introducing of the second etchant until a concentration of the second etchant is at a desired level, wherein the surface of the substrate remains submerged.

    Abstract translation: 提供了一种用于组合处理衬底的方法。 该方法包括将第一蚀刻剂引入反应器电池并将流体引入反应器电池中，同时第一蚀刻剂保留在反应器电池中。 在开始引入流体之后，通过第一去除管线和第二去除管线去除反应器单元的内容物，其中第一去除管线比第二去除管线更远地延伸进入反应器室。 在移除内容物的同时维持在第一去除线的入口上方的流体的水平。 将第二蚀刻剂引入反应器电池中，同时通过第一去除线和第二去除线去除内容物。 该方法包括继续引入第二蚀刻剂，直到第二蚀刻剂的浓度处于所需的水平，其中衬底的表面保持浸没。

    X-ray fluorescence analysis of thin-film coverage defects
    3.
    发明申请
    X-ray fluorescence analysis of thin-film coverage defects 有权
    薄膜覆盖缺陷的X射线荧光分析

    公开(公告)号：US20150185170A1

    公开(公告)日：2015-07-02

    申请号：US14140709

    申请日：2013-12-26

    Applicant: Intermolecular Inc.

    Inventor： Edwin Adhiprakasha

    IPC: G01N23/22 ,  C23F1/30 ,  C03C15/00

    CPC classification number: G01N23/22 ,  B24B37/013 ,  C03C15/00 ,  C23F1/00 ,  G01N23/223 ,  G01N2223/61 ,  G01N2223/646 ,  H01L22/12 ,  H01L22/26

    Abstract: X-ray fluorescence (XRF) monitoring of characteristic peaks while etching thin-film layers can reveal coverage defects and thickness nonuniformity in the top film. To measure coverage and uniformity while screening candidate layer materials and processes, the candidate layers may be formed above an underlayer of a different composition. A wet etchant that selectively etches the underlayer faster than the candidate layer is applied to the candidate layer, and the XRF spectrum is monitored. Pinholes, cracks, islands, and nonuniform thickness in the candidate layer produce characteristic features in the time-dependent behavior of XRF peaks from the underlayer and/or the candidate layer. “Etch/XRF” tests can be used to rapidly and objectively identify the most uniform contiguous candidate layers to advance to further screening or production. XRF may also be calibrated against a known thickness indicator to detect the approach of a desired endpoint in an etch process.

    Abstract translation: 蚀刻薄膜层时的特征峰的X射线荧光（XRF）监测可以揭示顶膜的覆盖缺陷和厚度不均匀性。 为了在筛选候选层材料和工艺的同时测量覆盖率和均匀性，候选层可以形成在不同组成的底层之上。 将候选层选择性地蚀刻底层的湿蚀刻剂施加到候选层，并且监测XRF谱。 候选层中的针孔，裂纹，岛和不均匀厚度在底层和/或候选层的XRF峰的时间依赖性行为中产生特征。 “Etch / XRF”测试可用于快速和客观地识别最均匀的连续候选层，以进一步筛选或生产。 XRF也可以针对已知的厚度指示器进行校准，以在蚀刻过程中检测所需端点的接近。

    X-ray fluorescence analysis of thin-film coverage defects
    6.
    发明授权
    X-ray fluorescence analysis of thin-film coverage defects 有权

    公开(公告)号：US09297773B2

    公开(公告)日：2016-03-29

    申请号：US14140709

    申请日：2013-12-26

    Applicant: Intermolecular Inc.

    Inventor： Edwin Adhiprakasha

    IPC: G01N23/22 ,  C03C15/00 ,  G01N23/223 ,  B24B37/013 ,  H01L21/66 ,  C23F1/00

    CPC classification number: G01N23/22 ,  B24B37/013 ,  C03C15/00 ,  C23F1/00 ,  G01N23/223 ,  G01N2223/61 ,  G01N2223/646 ,  H01L22/12 ,  H01L22/26

    Abstract: X-ray fluorescence (XRF) monitoring of characteristic peaks while etching thin-film layers can reveal coverage defects and thickness nonuniformity in the top film. To measure coverage and uniformity while screening candidate layer materials and processes, the candidate layers may be formed above an underlayer of a different composition. A wet etchant that selectively etches the underlayer faster than the candidate layer is applied to the candidate layer, and the XRF spectrum is monitored. Pinholes, cracks, islands, and nonuniform thickness in the candidate layer produce characteristic features in the time-dependent behavior of XRF peaks from the underlayer and/or the candidate layer. “Etch/XRF” tests can be used to rapidly and objectively identify the most uniform contiguous candidate layers to advance to further screening or production. XRF may also be calibrated against a known thickness indicator to detect the approach of a desired endpoint in an etch process.

    Combinatorial screening of metallic diffusion barriers
    7.
    发明申请
    Combinatorial screening of metallic diffusion barriers 有权
    组合筛选金属扩散屏障

    公开(公告)号：US20150338362A1

    公开(公告)日：2015-11-26

    申请号：US14285921

    申请日：2014-05-23

    Applicant: Intermolecular Inc.

    Inventor： Edwin Adhiprakasha ,  Sean Barstow ,  Ashish Bodke ,  Zhendong Hong ,  Usha Raghuram ,  Karthik Ramani ,  Vivian Ryan ,  Jingang Su ,  Xunyuan Zhang

    IPC: G01N27/20 ,  G01N27/04 ,  C23C14/06 ,  C23C14/34 ,  C23C14/54

    CPC classification number: G01N27/20 ,  C23C14/06 ,  C23C14/14 ,  C23C14/3464 ,  C23C14/54 ,  C23C14/548 ,  G01N27/041

    Abstract: Barrier layers, barrier stacks, and seed layers for small-scale interconnects (e.g., copper) are combinatorially screened using test structures sputtered or co-sputtered through apertures of varying size. Various characteristics (e.g., resistivity, crystalline morphology, surface roughness) related to conductivity, diffusion blocking, and adhesion are measured before and/or after annealing and compared to arrive at materials and process parameters for low diffusion with high conductivity through the interconnect. Example results show that some formulations of tantalum-titanium barriers may replace thicker tantalum/tantalum-nitride stacks, in some cases with a Cu—Mn seed layer between the Ta—Ti and copper.

    Abstract translation: 使用通过不同大小的孔溅射或共溅射的测试结构组合地筛选用于小规模互连（例如铜）的阻挡层，阻挡层和种子层。 在退火之前和/或之后测量与导电性，扩散阻挡和粘附有关的各种特性（例如，电阻率，结晶形态，表面粗糙度）并进行比较以获得材料和工艺参数，以通过互连实现高导电性的低扩散。 示例结果表明，一些钽 - 钛屏障的配方可以替代较厚的钽/氮化钽叠层，在某些情况下可以在Ta-Ti和铜之间具有Cu-Mn种子层。

    Mixed-metal barrier films optimized by high-productivity combinatorial PVD
    8.
    发明申请
    Mixed-metal barrier films optimized by high-productivity combinatorial PVD 审中-公开
    通过高生产率组合PVD优化的混合金属阻隔膜

    公开(公告)号：US20150021772A1

    公开(公告)日：2015-01-22

    申请号：US13943418

    申请日：2013-07-16

    Applicant: Intermolecular Inc.

    Inventor： Edwin Adhiprakasha ,  Sandip Niyogi ,  Karthik Ramani ,  Vivian Ryan

    IPC: H01L21/768 ,  H01L23/48

    CPC classification number: H01L21/2855 ,  C23C14/165 ,  C23C14/3492 ,  C23C14/352 ,  C23C14/5806 ,  H01J37/3408 ,  H01J37/3429 ,  H01L21/76843 ,  H01L23/53238 ,  H01L2924/0002 ,  H01L2924/00

    Abstract: A barrier film including at least one ferromagnetic metal (e.g., nickel) and at least one refractory metal (e.g., tantalum) effectively blocks copper diffusion and facilitates uniform contiguous (non-agglomerating) deposition of copper layers less than 100 Å thick. Methods of forming the metal barrier include co-sputtering the component metals from separate targets. Using high-productivity combinatorial (HPC) apparatus and methods, the proportions of the component metals can be optimized. Gradient compositions can be deposited by varying the plasma power or throw distance of the separate targets.

    Abstract translation: 包括至少一种铁磁金属（例如镍）和至少一种难熔金属（例如钽）的阻挡膜有效地阻止铜扩散并促进小于100埃的铜层的均匀连续（非聚集）沉积。 形成金属屏障的方法包括从分离的靶共溅射组分金属。 使用高生产率组合（HPC）设备和方法，可以优化组分金属的比例。 可以通过改变分离靶的等离子体功率或投射距离来沉积梯度组合物。

    Nucleation Interface for High-K Layer on Germanium
    9.
    发明申请
    Nucleation Interface for High-K Layer on Germanium 有权
    锗上高K层的成核界面

    公开(公告)号：US20140252565A1

    公开(公告)日：2014-09-11

    申请号：US14198480

    申请日：2014-03-05

    Applicant: Intermolecular, Inc.

    Inventor： Frank Greer ,  Edwin Adhiprakasha ,  Chi-I Lang ,  Ratsamee Limdulpaiboon ,  Sandip Niyogi ,  Kurt Pang ,  J. Watanabe

    IPC: H01L21/311 ,  H01L29/02

    CPC classification number: H01L21/31122 ,  H01L21/02052 ,  H01L21/02236 ,  H01L21/02255 ,  H01L21/02301 ,  H01L21/02304 ,  H01L21/02312 ,  H01L21/02315 ,  H01L21/28255 ,  H01L29/02

    Abstract: A germanium-containing semiconductor surface is prepared for formation of a dielectric overlayer (e.g., a thin layer of high-k gate dielectric) by (1) removal of native oxide, for example by wet cleaning, (2) additional cleaning with hydrogen species, (3) in-situ formation of a controlled monolayer of GeO2, and (4) in-situ deposition of the dielectric overlayer to prevent uncontrolled regrowth of native oxide. The monolayer of GeO2 promotes uniform nucleation of the dielectric overlayer, but it too thin to appreciably impact the effective oxide thickness of the dielectric overlayer.

    Abstract translation: 制备含锗的半导体表面，用于通过（1）去除天然氧化物，例如通过湿法清洁来形成电介质覆盖层（例如，高k栅极电介质的薄层），（2）用氢物质进行额外的清洁 ，（3）原位形成受控单层的GeO 2，以及（4）电介质覆层的原位沉积，以防止天然氧化物的不受控制的再生长。 GeO2的单层促进电介质覆盖层的均匀成核，但它太薄而不能明显影响电介质覆盖层的有效氧化物厚度。

    Method and Apparatus for Preventing Native Oxide Regrowth
    10.
    发明申请
    Method and Apparatus for Preventing Native Oxide Regrowth 审中-公开
    防止天然氧化物再生长的方法和装置

    公开(公告)号：US20140094037A1

    公开(公告)日：2014-04-03

    申请号：US14096369

    申请日：2013-12-04

    Applicant: Intermolecular, Inc.

    Inventor： Edwin Adhiprakasha ,  Shuogang Huang

    IPC: H01L21/3065 ,  H01L21/67

    CPC classification number: H01L21/3065 ,  H01L21/67063 ,  H01L21/6708 ,  H01L21/67086 ,  H01L21/6719

    Abstract: A method for combinatorially processing a substrate is provided. The method includes introducing a first etchant into a reactor cell and introducing a fluid into the reactor cell while the first etchant remains in the reactor cell. After initiating the introducing the fluid, contents of the reactor cell are removed through a first removal line and a second removal line, wherein the first removal line extends farther into the reactor cell than the second removal line. A level of the fluid above an inlet to the first removal line is maintained while removing the contents. A second etchant is introduced into the reactor cell while removing the contents through the first removal line and the second removal line. The method includes continuing the introducing of the second etchant until a concentration of the second etchant is at a desired level, wherein the surface of the substrate remains submerged.

    Abstract translation: 提供了一种用于组合处理衬底的方法。 该方法包括将第一蚀刻剂引入反应器电池并将流体引入反应器电池中，同时第一蚀刻剂保留在反应器电池中。 在开始引入流体之后，通过第一去除管线和第二去除管线去除反应器单元的内容物，其中第一去除管线比第二去除管线更远地延伸进入反应器室。 在移除内容物的同时维持在第一去除线的入口上方的流体的水平。 将第二蚀刻剂引入反应器电池中，同时通过第一去除线和第二去除线去除内容物。 该方法包括继续引入第二蚀刻剂，直到第二蚀刻剂的浓度处于所需的水平，其中衬底的表面保持浸没。

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