公开(公告)号：US09224644B2

公开(公告)日：2015-12-29

申请号：US13726972

申请日：2012-12-26

Applicant: Intermolecular, Inc.

Inventor： Sandip Niyogi ,  Amol Joshi ,  Chi-I Lang ,  Salil Mujumdar

IPC: H01L21/768 ,  C23C14/58 ,  C23C16/455 ,  H01L21/02 ,  H01L21/3115 ,  H01L21/3215 ,  H01J37/32 ,  H01L21/28 ,  H01L29/51 ,  H01L21/67 ,  H01L21/687 ,  H01L29/66

CPC classification number: H01L21/76886 ,  C23C14/5826 ,  C23C16/45536 ,  H01J37/32357 ,  H01L21/02181 ,  H01L21/022 ,  H01L21/02323 ,  H01L21/02332 ,  H01L21/0234 ,  H01L21/28088 ,  H01L21/28185 ,  H01L21/28202 ,  H01L21/31155 ,  H01L21/3215 ,  H01L21/67207 ,  H01L21/68764 ,  H01L21/68792 ,  H01L29/517 ,  H01L29/665 ,  H01L29/6653

Abstract: Methods and apparatus for processing using a remote plasma source are disclosed. The apparatus includes an outer chamber enclosing a substrate support, a remote plasma source, and a showerhead. A substrate heater can be mounted in the substrate support. A transport system moves the substrate support and is capable of positioning the substrate. The remote plasma source may be used to provide a plasma surface treatment or as a source to incorporate dopants into a pre-deposited layer.

Abstract translation: 公开了使用远程等离子体源的处理方法和装置。 该装置包括封闭衬底支撑件，远程等离子体源和喷头的外室。 基板加热器可以安装在基板支撑件中。 运输系统移动基板支撑件并且能够定位基板。 远程等离子体源可用于提供等离子体表面处理或作为将掺杂剂掺入预沉积层的源。

公开(公告)号：US20150140836A1

公开(公告)日：2015-05-21

申请号：US14083117

申请日：2013-11-18

Applicant: Intermolecular, Inc.

Inventor： Sandip Niyogi

IPC: H01L21/02

CPC classification number: H01L21/3105 ,  H01L21/28185 ,  H01L21/68 ,  H01L21/68792

Abstract: Methods and apparatus for processing using a remote plasma source are disclosed. The apparatus includes an outer chamber enclosing a substrate support, a remote plasma source, and a showerhead. A substrate heater can be mounted in the substrate support. A transport system moves the substrate support and is capable of positioning the substrate. Methods are disclosed that discuss the use of blocking species that bind to the surface of the dielectric and retard the etching of the dielectric surface by a doping/passivating species. The surface of the dielectric may be exposed to the blocking species a plurality of times during the process to ensure that the surface is well protected.

Abstract translation: 公开了使用远程等离子体源的处理方法和装置。 该装置包括封闭衬底支撑件，远程等离子体源和喷头的外室。 基板加热器可以安装在基板支撑件中。 运输系统移动基板支撑件并且能够定位基板。 公开了讨论使用结合到电介质表面的阻挡物质并通过掺杂/钝化物质延缓电介质表面的蚀刻的方法。 电介质的表面可能在该过程中暴露于阻挡物质多次，以确保表面得到很好的保护。

公开(公告)号：US08927415B2

公开(公告)日：2015-01-06

申请号：US14134219

申请日：2013-12-19

Applicant: Intermolecular, Inc.

Inventor： Sandip Niyogi ,  Chi-l Lang

IPC: H01L21/00 ,  H01L21/768 ,  C23C14/04 ,  C23C14/06 ,  C23C14/18 ,  C23C14/58 ,  H01L21/3205 ,  H01L23/532 ,  H01L21/02

CPC classification number: H01L21/76846 ,  C23C14/042 ,  C23C14/0605 ,  C23C14/185 ,  C23C14/5806 ,  H01L21/02422 ,  H01L21/0243 ,  H01L21/02527 ,  H01L21/02672 ,  H01L21/32051 ,  H01L21/76823 ,  H01L21/76855 ,  H01L21/76867 ,  H01L21/76871 ,  H01L23/53238 ,  H01L23/53276 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Embodiments described herein provide interconnect barrier layers and methods for forming such barriers. A dielectric body having a trench formed in a surface thereof is provided. A first layer is formed above the dielectric body within the trench. The first layer includes amorphous carbon. A second layer is formed above the first layer. The second layer includes a metal. The dielectric body, the first layer, and the second layer are heated to convert at least some of the amorphous carbon to graphene.

Abstract translation: 本文所述的实施例提供了用于形成这种障碍物的互连阻挡层和方法。 提供具有形成在其表面中的沟槽的电介质体。 第一层形成在沟槽内的绝缘体的上方。 第一层包括无定形碳。 在第一层上方形成第二层。 第二层包括金属。 电介质体，第一层和第二层被加热以将至少一些无定形碳转化为石墨烯。

公开(公告)号：US20140166616A1

公开(公告)日：2014-06-19

申请号：US13717478

申请日：2012-12-17

Applicant: INTERMOLECULAR, INC.

Inventor： Sunil Shanker ,  Tony P. Chiang ,  Chi-I Lang ,  Sandip Niyogi

IPC: C23C16/50 ,  B44C1/22

CPC classification number: C23C16/50 ,  C23C16/452 ,  C23C16/45565 ,  C23C16/45574 ,  C23C16/4584

Abstract: Methods and apparatus for processing using a remote plasma source are disclosed. The apparatus includes an outer chamber, a remote plasma source, and a showerhead. Inert gas ports within the showerhead assembly can be used to alter the concentration and energy of reactive radical or reactive neutral species generated by the remote plasma source in different regions of the showerhead. This allows the showerhead to be used to apply a surface treatment to different regions of the surface of a substrate. Varying parameters such as the remote plasma parameters, the inert gas flows, pressure, and the like allow different regions of the substrate to be treated in a combinatorial manner.

Abstract translation: 公开了使用远程等离子体源的处理方法和装置。 该装置包括外室，远程等离子体源和喷头。 喷头组件内的惰性气体端口可用于改变由喷头的不同区域中的远程等离子体源产生的反应性基团或反应中性物质的浓度和能量。 这允许使用喷头来对表面的不同区域进行表面处理。 诸如远程等离子体参数，惰性气体流量，压力等的不同参数允许以组合的方式处理衬底的不同区域。

公开(公告)号：US20170117282A1

公开(公告)日：2017-04-27

申请号：US15334278

申请日：2016-10-25

Applicant: Intermolecular, Inc.

Inventor： Monica S. Mathur ,  Randall Higuchi ,  Thong Quang Ngo ,  Sandip Niyogi ,  Prashant Phatak

IPC: H01L27/108 ,  H01L49/02

CPC classification number: H01L27/10852 ,  H01L27/10814 ,  H01L27/11582 ,  H01L28/00 ,  H01L28/56 ,  H01L28/65

Abstract: Embodiments provided herein describe capacitor stacks and methods for forming capacitor stacks. A first electrode is formed above a substrate. A dielectric layer is formed above the first electrode. The dielectric layer includes zirconium. A second electrode is formed above the dielectric layer. At least one of the first electrode and the second electrode includes iridium.

公开(公告)号：US20150179743A1

公开(公告)日：2015-06-25

申请号：US14134329

申请日：2013-12-19

Applicant: Intermolecular, Inc.

Inventor： Sandip Niyogi

IPC: H01L29/16 ,  H01L29/51 ,  H01L29/26 ,  H01L21/02 ,  H01L21/3205 ,  H01L29/49 ,  H01L29/45 ,  H01L29/161

CPC classification number: H01L29/1606 ,  H01L21/02527 ,  H01L21/02592 ,  H01L21/0262 ,  H01L21/28512 ,  H01L29/161 ,  H01L29/4966 ,  H01L29/517

Abstract: In some embodiments, a “channel last” device architecture is implemented wherein an amorphous carbon layer is formed between the channel and the source and drain layers. Subsequent heating of the structure allows the metal materials in the source and drain layers to convert the amorphous carbon materials into graphene. This forms an ohmic contact between the source and drain layers and the channel layers and lowers the contact resistance.

Abstract translation: 在一些实施例中，实现了“通道最后”器件结构，其中在沟道和源极和漏极层之间形成无定形碳层。 随后加热结构允许源层和漏层中的金属材料将无定形碳材料转化成石墨烯。 这在源极和漏极层和沟道层之间形成欧姆接触，并降低接触电阻。

公开(公告)号：US08901677B2

公开(公告)日：2014-12-02

申请号：US14198480

申请日：2014-03-05

Applicant: Intermolecular, Inc.

Inventor： Frank Greer ,  Edwin Adhiprakasha ,  Chi-I Lang ,  Ratsamee Limdulpaiboon ,  Sandip Niyogi ,  Kurt Pang ,  J. Watanabe

IPC: H01L21/336 ,  H01L21/311 ,  H01L29/02

CPC classification number: H01L21/31122 ,  H01L21/02052 ,  H01L21/02236 ,  H01L21/02255 ,  H01L21/02301 ,  H01L21/02304 ,  H01L21/02312 ,  H01L21/02315 ,  H01L21/28255 ,  H01L29/02

Abstract: A germanium-containing semiconductor surface is prepared for formation of a dielectric overlayer (e.g., a thin layer of high-k gate dielectric) by (1) removal of native oxide, for example by wet cleaning, (2) additional cleaning with hydrogen species, (3) in-situ formation of a controlled monolayer of GeO2, and (4) in-situ deposition of the dielectric overlayer to prevent uncontrolled regrowth of native oxide. The monolayer of GeO2 promotes uniform nucleation of the dielectric overlayer, but it too thin to appreciably impact the effective oxide thickness of the dielectric overlayer.

Abstract translation: 制备含锗的半导体表面，用于通过（1）去除天然氧化物，例如通过湿法清洁来形成电介质覆盖层（例如，高k栅极电介质的薄层），（2）用氢物质进行额外的清洁 ，（3）原位形成受控单层的GeO 2，以及（4）电介质覆层的原位沉积，以防止天然氧化物的不受控制的再生长。 GeO2的单层促进电介质覆盖层的均匀成核，但它太薄而不能明显影响电介质覆盖层的有效氧化物厚度。

公开(公告)号：US08821985B2

公开(公告)日：2014-09-02

申请号：US13667986

申请日：2012-11-02

Applicant: Intermolecular, Inc.

Inventor： ShouQian Shao ,  Chi-I Lang ,  Sandip Niyogi ,  Jinhong Tong

IPC: B05D3/00 ,  H05H1/00

CPC classification number: C23C16/45542 ,  B01J19/0046 ,  B01J2219/0043 ,  B01J2219/00443 ,  B01J2219/00635 ,  B01J2219/00754 ,  B01J2219/00756 ,  C23C16/04 ,  C23C16/45565

Abstract: Methods and apparatuses for combinatorial processing are disclosed. Methods include introducing a substrate into a processing chamber. Methods further include forming a first film on a surface of a first site-isolated region on the substrate and forming a second film on a surface of a second site-isolated region on the substrate. The methods further include exposing the first film to a plasma having a first source gas to form a first treated film on the substrate and exposing the second film to a plasma having a second source gas to form a second treated film on the substrate without etching the first treated film in the processing chamber. In addition, methods include evaluating results of the treated films post processing.

Abstract translation: 公开了用于组合处理的方法和装置。 方法包括将衬底引入处理室。 方法还包括在衬底上的第一位点隔离区域的表面上形成第一膜，并在衬底上的第二位置隔离区域的表面上形成第二膜。 所述方法还包括将第一膜暴露于具有第一源气体的等离子体，以在衬底上形成第一处理膜，并将第二膜暴露于具有第二源气体的等离子体，以在衬底上形成第二处理膜，而不蚀刻 处理室中的第一处理膜。 此外，方法包括评估经处理的膜后处理的结果。

公开(公告)号：US20140127422A1

公开(公告)日：2014-05-08

申请号：US13667986

申请日：2012-11-02

Applicant: INTERMOLECULAR, INC.

Inventor： ShouQian Shao ,  Chi-I Lang ,  Sandip Niyogi ,  Jinhong Tong

IPC: B05D3/10

CPC classification number: C23C16/45542 ,  B01J19/0046 ,  B01J2219/0043 ,  B01J2219/00443 ,  B01J2219/00635 ,  B01J2219/00754 ,  B01J2219/00756 ,  C23C16/04 ,  C23C16/45565

Abstract: Methods and apparatuses for combinatorial processing are disclosed. Methods include introducing a substrate into a processing chamber. Methods further include forming a first film on a surface of a first site-isolated region on the substrate and forming a second film on a surface of a second site-isolated region on the substrate. The methods further include exposing the first film to a plasma having a first source gas to form a first treated film on the substrate and exposing the second film to a plasma having a second source gas to form a second treated film on the substrate without etching the first treated film in the processing chamber. In addition, methods include evaluating results of the treated films post processing.

Abstract translation: 公开了用于组合处理的方法和装置。 方法包括将衬底引入处理室。 方法还包括在衬底上的第一位点隔离区域的表面上形成第一膜，并在衬底上的第二位置隔离区域的表面上形成第二膜。 所述方法还包括将第一膜暴露于具有第一源气体的等离子体，以在衬底上形成第一处理膜，并将第二膜暴露于具有第二源气体的等离子体，以在衬底上形成第二处理膜，而不蚀刻 处理室中的第一处理膜。 此外，方法包括评估经处理的膜后处理的结果。

公开(公告)号：US20140273525A1

公开(公告)日：2014-09-18

申请号：US14019961

申请日：2013-09-06

Applicant: Intermolecular, Inc.

Inventor： Kurt Pang ,  Sean Barstow ,  Chi-I Lang ,  Michael Miller ,  Sandip Niyogi ,  Prashant B. Phatak

IPC: H01L21/02

CPC classification number: H01L21/76864 ,  H01L21/02005 ,  H01L21/02104 ,  H01L21/02172 ,  H01L21/02175 ,  H01L21/02178 ,  H01L21/02181 ,  H01L21/02189 ,  H01L21/02205 ,  H01L21/0228 ,  H01L21/283 ,  H01L21/28575 ,  H01L21/3065 ,  H01L22/12 ,  H01L22/14 ,  H01L27/1462 ,  H01L27/14643 ,  H01L27/14698 ,  H01L29/1606 ,  H01L29/41 ,  H01L29/66477 ,  H01L29/66742 ,  H01L29/778 ,  H01L29/786

Abstract: Metal-oxide films (e.g., aluminum oxide) with low leakage current suitable for high-k gate dielectrics are deposited by atomic layer deposition (ALD). The purge time after the metal-deposition phase is 5-15 seconds, and the purge time after the oxidation phase is prolonged beyond 60 seconds. Prolonging the post-oxidation purge produced an order-of-magnitude reduction of leakage current in 30 Å-thick Al2O3 films.

Abstract translation: 通过原子层沉积（ALD）沉积具有适合于高k栅极电介质的低泄漏电流的金属氧化物膜（例如氧化铝）。 金属沉积阶段后的清洗时间为5-15秒，氧化阶段后的吹扫时间延长超过60秒。 延长后氧化吹扫在30Å厚的Al2O3薄膜中产生了数量级的泄漏电流。