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公开(公告)号：US11239316B2
公开(公告)日：2022-02-01
申请号：US16398999
申请日：2019-04-30
发明人： Marc Adam Bergendahl , Gauri Karve , Fee Li Lie , Eric R. Miller , Robert Russell Robison , John Ryan Sporre , Sean Teehan
IPC分类号： H01L21/00 , H01L29/06 , H01L29/423 , H01L29/66 , H01L29/786
摘要： A semiconductor device includes a fin structure including a cylindrical shape, an inner gate formed inside the fin structure, and an outer gate formed outside the fin structure and connected to the inner gate.
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公开(公告)号：US20220140074A1
公开(公告)日：2022-05-05
申请号：US17578891
申请日：2022-01-19
发明人： Marc Adam Bergendahl , Gauri Karve , Fee Li Lie , Eric R. Miller , Robert Russell Robison , John Ryan Sporre , Sean Teehan
IPC分类号： H01L29/06 , H01L29/423 , H01L29/66 , H01L29/786
摘要： A semiconductor device including a fin structure including a recess, a first gate formed in the recess of the fin structure, and a second gate formed outside the fin structure.
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公开(公告)号：US11127815B2
公开(公告)日：2021-09-21
申请号：US16398987
申请日：2019-04-30
发明人： Marc Adam Bergendahl , Gauri Karve , Fee Li Lie , Eric R. Miller , Robert Russell Robison , John Ryan Sporre , Sean Teehan
IPC分类号： H01L21/00 , H01L29/06 , H01L29/423 , H01L29/66 , H01L29/786
摘要： A semiconductor device includes a fin structure having a circular cylindrical shape, and including a first recess formed on a first side of the fin structure and a second recess formed on a second side of the fin structure opposite the first side, an inner gate formed inside the fin structure, and an inner gate insulating layer formed between the inner gate and an inner surface of the fin structure.
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公开(公告)号：US20180122947A1
公开(公告)日：2018-05-03
申请号：US15859362
申请日：2017-12-30
发明人： Marc Adam Bergendahl , Gauri Karve , Fee Li Lie , Eric R. Miller , Robert Russell Robison , John Ryan Sporre , Sean Teehan
CPC分类号： H01L29/0657 , H01L29/42392 , H01L29/66742 , H01L29/78642 , H01L29/78648 , H01L29/78696
摘要： A semiconductor device includes a fin structure including a cylindrical shape, an inner gate formed inside the fin structure, and an outer gate formed outside the fin structure and connected to the inner gate.
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公开(公告)号：US20180006118A1
公开(公告)日：2018-01-04
申请号：US15199550
申请日：2016-06-30
IPC分类号： H01L29/10 , H01L21/8234 , H01L27/088 , H01L29/78
CPC分类号： H01L21/823412 , H01L21/823487 , H01L27/088 , H01L29/0847 , H01L29/41741 , H01L29/665 , H01L29/66545 , H01L29/66666 , H01L29/7827 , H01L29/78642
摘要： A method and a semiconductor device includes a substrate, and a first device type formed on the substrate, the first device type including an active channel region including a first fin, the first fin including a first fin width which is narrower than a second fin width above and below the active channel region. A second device type can be formed on the same substrate, the second device type includes a second active channel region including a second fin, the second fin including a first fin width which is the same as the second fin width both above and below the second active channel region.
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公开(公告)号：US11869937B2
公开(公告)日：2024-01-09
申请号：US17578891
申请日：2022-01-19
发明人： Marc Adam Bergendahl , Gauri Karve , Fee Li Lie , Eric R. Miller , Robert Russell Robison , John Ryan Sporre , Sean Teehan
IPC分类号： H01L21/00 , H01L29/06 , H01L29/423 , H01L29/66 , H01L29/786
CPC分类号： H01L29/0657 , H01L29/42392 , H01L29/66742 , H01L29/78642 , H01L29/78648 , H01L29/78696
摘要： A semiconductor device including a fin structure including a recess, a first gate formed in the recess of the fin structure, and a second gate formed outside the fin structure.
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公开(公告)号：US11869936B2
公开(公告)日：2024-01-09
申请号：US17402507
申请日：2021-08-14
发明人： Marc Adam Bergendahl , Gauri Karve , Fee Li Lie , Eric R. Miller , Robert Russell Robison , John Ryan Sporre , Sean Teehan
IPC分类号： H01L21/00 , H01L29/06 , H01L29/423 , H01L29/66 , H01L29/786
CPC分类号： H01L29/0657 , H01L29/42392 , H01L29/66742 , H01L29/78642 , H01L29/78648 , H01L29/78696
摘要： A semiconductor device includes a fin structure including a recess formed in an upper surface of the fin structure, an inner gate formed in the recess of the fin structure, and an outer gate formed outside and around the fin structure.
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公开(公告)号：US11056391B2
公开(公告)日：2021-07-06
申请号：US15199550
申请日：2016-06-30
IPC分类号： H01L29/10 , H01L21/8234 , H01L27/088 , H01L29/78 , H01L29/66 , H01L29/417 , H01L29/08 , H01L29/786
摘要： A method and a semiconductor device includes a substrate, and a first device type formed on the substrate, the first device type including an active channel region including a first fin, the first fin including a first fin width which is narrower than a second fin width above and below the active channel region. A second device type can be formed on the same substrate, the second device type includes a second active channel region including a second fin, the second fin including a first fin width which is the same as the second fin width both above and below the second active channel region.
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公开(公告)号：US20190259833A1
公开(公告)日：2019-08-22
申请号：US16398999
申请日：2019-04-30
发明人： Marc Adam BERGENDAHL , Gauri Karve , Fee Li Lie , Eric R. Miller , Robert Russell Robison , John Ryan Sporre , Sean Teehan
IPC分类号： H01L29/06 , H01L29/786 , H01L29/423 , H01L29/66
摘要： A semiconductor device includes a fin structure including a cylindrical shape, an inner gate formed inside the fin structure, and an outer gate formed outside the fin structure and connected to the inner gate.
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公开(公告)号：US10381437B2
公开(公告)日：2019-08-13
申请号：US15859362
申请日：2017-12-30
发明人： Marc Adam Bergendahl , Gauri Karve , Fee Li Lie , Eric R. Miller , Robert Russell Robison , John Ryan Sporre , Sean Teehan
IPC分类号： H01L21/00 , H01L29/06 , H01L29/423 , H01L29/66 , H01L29/786
摘要： A semiconductor device includes a fin structure including a cylindrical shape, an inner gate formed inside the fin structure, and an outer gate formed outside the fin structure and connected to the inner gate.
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