公开(公告)号：US20100158353A1

公开(公告)日：2010-06-24

申请号：US12491010

申请日：2009-06-24

申请人： Jae-Hean KIM ,  Jung Jae Yu ,  Hye-mi Kim ,  Jaehwan Kim ,  Jong Sung Kim ,  Jin Ho Kim ,  Il-Kwon Jeong

发明人： Jae-Hean KIM ,  Jung Jae Yu ,  Hye-mi Kim ,  Jaehwan Kim ,  Jong Sung Kim ,  Jin Ho Kim ,  Il-Kwon Jeong

IPC分类号： G06K9/00

CPC分类号： G06T7/564 ,  G06T7/33 ,  G06T7/97

摘要： A method for restoration of building structure using infinity homographies calculated based on parallelograms includes: calculating, using two or more parallelograms, an infinity homography between those cameras which refer to an arbitrary camera; restoring cameras and the building structure on an affine space using the computed infinity homography and homologous points between images; and transforming the restored result onto the metric space using constraints on orthogonality of vectors joining the restored three-dimensional points, the ratio of lengths of the vectors and intrinsic camera parameters. As a result, intrinsic camera parameters, camera positions on the metric space and the structure of the building are restored. All the restoration is possible even when intrinsic camera parameters corresponding to all the images are not constant.

摘要翻译： 使用基于平行四边形计算的无限同态法恢复建筑结构的方法包括：使用两个或更多个平行四边形计算参考任意相机的那些相机之间的无限一体图像; 使用计算的无限一体图像和图像之间的同源点在仿射空间上恢复相机和建筑结构; 以及使用对连接恢复的三维点的向量的正交性的限制，向量的长度比和固有的相机参数将恢复的结果变换到度量空间。 因此，恢复固有摄像机参数，度量空间上的摄像机位置和建筑物的结构。 即使对应于所有图像的内在相机参数不是常数，所有的恢复都是可能的。

公开(公告)号：US08401277B2

公开(公告)日：2013-03-19

申请号：US12491010

申请日：2009-06-24

申请人： Jae-Hean Kim ,  Jung Jae Yu ,  Hye-mi Kim ,  Jaehwan Kim ,  Jong Sung Kim ,  Jin Ho Kim ,  Il-Kwon Jeong

发明人： Jae-Hean Kim ,  Jung Jae Yu ,  Hye-mi Kim ,  Jaehwan Kim ,  Jong Sung Kim ,  Jin Ho Kim ,  Il-Kwon Jeong

IPC分类号： G06K9/00

CPC分类号： G06T7/564 ,  G06T7/33 ,  G06T7/97

摘要： A method for restoration of building structure using infinity homographies calculated based on parallelograms includes: calculating, using two or more parallelograms, an infinity homography between those cameras which refer to an arbitrary camera; restoring cameras and the building structure on an affine space using the computed infinity homography and homologous points between images; and transforming the restored result onto the metric space using constraints on orthogonality of vectors joining the restored three-dimensional points, the ratio of lengths of the vectors and intrinsic camera parameters. As a result, intrinsic camera parameters, camera positions on the metric space and the structure of the building are restored. All the restoration is possible even when intrinsic camera parameters corresponding to all the images are not constant.

摘要翻译： 使用基于平行四边形计算的无限同态法恢复建筑结构的方法包括：使用两个或更多个平行四边形计算参考任意相机的那些相机之间的无限一体图像; 使用计算的无限一体图像和图像之间的同源点在仿射空间上恢复相机和建筑结构; 以及使用对连接恢复的三维点的向量的正交性的限制，向量的长度比和固有的相机参数将恢复的结果变换到度量空间。 因此，恢复固有摄像机参数，度量空间上的摄像机位置和建筑物的结构。 即使对应于所有图像的内在相机参数不是常数，所有的恢复都是可能的。

公开(公告)号：US20100158352A1

公开(公告)日：2010-06-24

申请号：US12489970

申请日：2009-06-23

申请人： Jung-Jae YU ,  Jae-Hean Kim ,  Hye-mi Kim ,  Il-Kwon Jeong

发明人： Jung-Jae YU ,  Jae-Hean Kim ,  Hye-mi Kim ,  Il-Kwon Jeong

IPC分类号： G06K9/00 ,  H04N5/225

CPC分类号： H04N5/2224 ,  G06T7/246 ,  G06T7/277 ,  G06T2207/10016

摘要： A camera tracking apparatus for calculating in real time feature information and camera motion information based on an input image includes a global camera tracking unit for computing a global feature map having feature information on entire feature points; a local camera tracking unit for computing in real time a local feature map having feature information on a part of the entire feature points; a global feature map update unit for receiving the computed feature information from the global and local camera tracking units to update the global feature map; and a local feature selection unit for receiving the updated feature information from the global feature map update unit to select in real time the feature points contained in the local feature map. The local camera tracking unit computes the local feature map for each frame, while the global camera tracking unit computes the global feature map over frames.

摘要翻译： 一种用于基于输入图像计算实时特征信息和相机运动信息的相机跟踪装置，包括用于计算具有关于整个特征点的特征信息的全局特征图的全局相机跟踪单元; 本地相机跟踪单元，用于实时地计算具有关于整个特征点的一部分的特征信息的局部特征图; 全局特征图更新单元，用于从全局和本地相机跟踪单元接收计算出的特征信息以更新全局特征图; 以及本地特征选择单元，用于从全局特征图更新单元接收更新的特征信息，以实时选择包含在本地特征图中的特征点。 本地摄像机跟踪单元计算每个帧的局部特征图，而全局摄像机跟踪单元通过帧计算全局特征图。

公开(公告)号：US08265337B2

公开(公告)日：2012-09-11

申请号：US12489970

申请日：2009-06-23

申请人： Jung-Jae Yu ,  Jae-Hean Kim ,  Hye-mi Kim ,  Il-Kwon Jeong

发明人： Jung-Jae Yu ,  Jae-Hean Kim ,  Hye-mi Kim ,  Il-Kwon Jeong

IPC分类号： G06K9/00

CPC分类号： H04N5/2224 ,  G06T7/246 ,  G06T7/277 ,  G06T2207/10016

摘要： A camera tracking apparatus for calculating in real time feature information and camera motion information based on an input image includes a global camera tracking unit for computing a global feature map having feature information on entire feature points; a local camera tracking unit for computing in real time a local feature map having feature information on a part of the entire feature points; a global feature map update unit for receiving the computed feature information from the global and local camera tracking units to update the global feature map; and a local feature selection unit for receiving the updated feature information from the global feature map update unit to select in real time the feature points contained in the local feature map. The local camera tracking unit computes the local feature map for each frame, while the global camera tracking unit computes the global feature map over frames.

摘要翻译： 一种用于基于输入图像计算实时特征信息和相机运动信息的相机跟踪装置，包括用于计算具有关于整个特征点的特征信息的全局特征图的全局相机跟踪单元; 本地相机跟踪单元，用于实时地计算具有关于整个特征点的一部分的特征信息的局部特征图; 全局特征图更新单元，用于从全局和本地相机跟踪单元接收计算出的特征信息以更新全局特征图; 以及本地特征选择单元，用于从全局特征图更新单元接收更新的特征信息，以实时选择包含在本地特征图中的特征点。 本地摄像机跟踪单元计算每个帧的局部特征图，而全局摄像机跟踪单元通过帧计算全局特征图。

公开(公告)号：US20100245593A1

公开(公告)日：2010-09-30

申请号：US12549650

申请日：2009-08-28

申请人： Jong Sung Kim ,  Hye-mi Kim ,  Jae-Hean Kim

发明人： Jong Sung Kim ,  Hye-mi Kim ,  Jae-Hean Kim

IPC分类号： H04N17/00 ,  G06K9/00

CPC分类号： H04N5/222 ,  G06T7/80 ,  H04N5/2224

摘要： An apparatus for calibrating images between cameras, includes: a detector for detecting dynamic markers from images taken by a motion capture camera and a video camera; a 3D position recovery unit for recovering 3D position data of the dynamic markers obtained by the motion capture camera; a 2D position tracking unit for tracking 2D position data of the dynamic markers obtained by the video camera; a matching unit for matching the 3D position data and the 2D position data of the dynamic markers; and a calibrating unit for converting the 3D position of the dynamic markers on a spatial coordinate system into image coordinates on an image coordinate system of the video camera to calculate intrinsic parameters and extrinsic parameters of the video camera to minimize a difference between coordinates of the 2D position data and the image coordinates.

摘要翻译： 一种用于在相机之间校准图像的装置，包括：用于从运动捕捉相机和摄像机拍摄的图像中检测动态标记的检测器; 3D位置恢复单元，用于恢复由运动捕捉相机获得的动态标记的3D位置数据; 2D位置跟踪单元，用于跟踪由摄像机获得的动态标记的2D位置数据; 匹配单元，用于匹配动态标记的3D位置数据和2D位置数据; 以及用于将空间坐标系上的动态标记的3D位置转换为摄像机的图像坐标系上的图像坐标的校准单元，以计算摄像机的固有参数和外在参数，以最小化2D的坐标之间的差异 位置数据和图像坐标。

公开(公告)号：US08405717B2

公开(公告)日：2013-03-26

申请号：US12549650

申请日：2009-08-28

申请人： Jong Sung Kim ,  Hye-mi Kim ,  Jae-Hean Kim

发明人： Jong Sung Kim ,  Hye-mi Kim ,  Jae-Hean Kim

IPC分类号： H04N7/18

CPC分类号： H04N5/222 ,  G06T7/80 ,  H04N5/2224

摘要： An apparatus for calibrating images between cameras, includes: a detector for detecting dynamic markers from images taken by a motion capture camera and a video camera; a 3D position recovery unit for recovering 3D position data of the dynamic markers obtained by the motion capture camera; a 2D position tracking unit for tracking 2D position data of the dynamic markers obtained by the video camera; a matching unit for matching the 3D position data and the 2D position data of the dynamic markers; and a calibrating unit for converting the 3D position of the dynamic markers on a spatial coordinate system into image coordinates on an image coordinate system of the video camera to calculate intrinsic parameters and extrinsic parameters of the video camera to minimize a difference between coordinates of the 2D position data and the image coordinates.

摘要翻译： 一种用于在相机之间校准图像的装置，包括：用于从运动捕捉相机和摄像机拍摄的图像中检测动态标记的检测器; 3D位置恢复单元，用于恢复由运动捕捉相机获得的动态标记的3D位置数据; 2D位置跟踪单元，用于跟踪由摄像机获得的动态标记的2D位置数据; 匹配单元，用于匹配动态标记的3D位置数据和2D位置数据; 以及用于将空间坐标系上的动态标记的3D位置转换成摄像机的图像坐标系上的图像坐标的校准单元，以计算摄像机的固有参数和外在参数，以最小化2D的坐标之间的差异 位置数据和图像坐标。

公开(公告)号：US07803676B2

公开(公告)日：2010-09-28

申请号：US12414172

申请日：2009-03-30

申请人： Jong-ho Park ,  Chang-Ki Jeon ,  Hyi-Jeong Park ,  Hye-mi Kim

发明人： Jong-ho Park ,  Chang-Ki Jeon ,  Hyi-Jeong Park ,  Hye-mi Kim

IPC分类号： H01L21/8238 ,  H01L21/331 ,  H01L21/8222

CPC分类号： H01L21/8249 ,  H01L21/823412 ,  H01L21/823418 ,  H01L21/823807 ,  H01L21/823814 ,  H01L27/0623 ,  H01L27/0922 ,  H01L29/0653 ,  H01L29/41766 ,  H01L29/456 ,  H01L29/66719 ,  H01L29/66727 ,  H01L29/7809 ,  H01L29/7812

摘要： Provided are a semiconductor device and a method of fabricating the semiconductor device. The semiconductor device using a DMOS device includes: a semiconductor substrate, in which a first conductive type well is formed; a first conductive type gate electrode formed on the semiconductor substrate with a gate insulating layer intervening between the gate electrode and the semiconductor substrate; a second conductive type body electrode formed on the semiconductor substrate and separated from the gate electrode; a first conductive type drain electrode formed on the semiconductor substrate and separated from the gate electrode and the body electrode; a second conductive type first body region formed in the well under the body electrode; a second conductive type second body region extending from the first body region to the gate insulating layer and formed in the well; a first conductive type source region formed in the second body region and extending from the first body region to the gate insulating layer; and a first conductive type source electrode extending from the source region to surround the gate electrode on the semiconductor substrate with an insulating layer intervening between the source electrode and gate electrode.

摘要翻译： 提供半导体器件和制造半导体器件的方法。 使用DMOS器件的半导体器件包括：形成第一导电型阱的半导体衬底; 形成在所述半导体衬底上的第一导电型栅极电极，所述栅极绝缘层介于所述栅电极和所述半导体衬底之间; 形成在所述半导体基板上并与所述栅电极分离的第二导电型体电极; 形成在所述半导体基板上并与所述栅电极和所述主体电极分离的第一导电型漏电极; 形成在所述体电极下方的所述阱内的第二导电型第一体区域; 第二导电类型的第二主体区域，其从所述第一主体区域延伸到所述栅极绝缘层并形成在所述阱中; 形成在所述第二主体区域中并从所述第一主体区域延伸到所述栅极绝缘层的第一导电型源极区域; 以及第一导电型源电极，其从所述源极区域延伸，以在所述半导体衬底上围绕所述栅极电极，所述绝缘层介于所述源电极和栅电极之间。

公开(公告)号：US20100320537A1

公开(公告)日：2010-12-23

申请号：US12870913

申请日：2010-08-30

申请人： Jong-ho Park ,  Chang-ki Jeon ,  Hyi-Jeong Park ,  Hye-mi Kim

发明人： Jong-ho Park ,  Chang-ki Jeon ,  Hyi-Jeong Park ,  Hye-mi Kim

IPC分类号： H01L27/06 ,  H01L29/78

CPC分类号： H01L21/8249 ,  H01L21/823412 ,  H01L21/823418 ,  H01L21/823807 ,  H01L21/823814 ,  H01L27/0623 ,  H01L27/0922 ,  H01L29/0653 ,  H01L29/41766 ,  H01L29/456 ,  H01L29/66719 ,  H01L29/66727 ,  H01L29/7809 ,  H01L29/7812

摘要： Provided are a semiconductor device and a method of fabricating the semiconductor device. The semiconductor device using a DMOS device includes: a semiconductor substrate, in which a first conductive type well is formed; a first conductive type gate electrode formed on the semiconductor substrate with a gate insulating layer intervening between the gate electrode and the semiconductor substrate; a second conductive type body electrode formed on the semiconductor substrate and separated from the gate electrode; a first conductive type drain electrode formed on the semiconductor substrate and separated from the gate electrode and the body electrode; a second conductive type first body region formed in the well under the body electrode; a second conductive type second body region extending from the first body region to the gate insulating layer and formed in the well; a first conductive type source region formed in the second body region and extending from the first body region to the gate insulating layer; and a first conductive type source electrode extending from the source region to surround the gate electrode on the semiconductor substrate with an insulating layer intervening between the source electrode and gate electrode.

摘要翻译： 提供半导体器件和制造半导体器件的方法。 使用DMOS器件的半导体器件包括：形成第一导电型阱的半导体衬底; 形成在所述半导体衬底上的第一导电型栅极电极，所述栅极绝缘层介于所述栅电极和所述半导体衬底之间; 形成在所述半导体基板上并与所述栅电极分离的第二导电型体电极; 形成在所述半导体基板上并与所述栅电极和所述主体电极分离的第一导电型漏电极; 形成在所述体电极下方的所述阱内的第二导电型第一体区域; 第二导电类型的第二主体区域，其从所述第一主体区域延伸到所述栅极绝缘层并形成在所述阱中; 形成在所述第二主体区域中并从所述第一主体区域延伸到所述栅极绝缘层的第一导电型源极区域; 以及第一导电型源电极，其从所述源极区域延伸，以在所述半导体衬底上围绕所述栅极电极，所述绝缘层介于所述源电极和栅电极之间。

公开(公告)号：US20090250753A1

公开(公告)日：2009-10-08

申请号：US12414172

申请日：2009-03-30

申请人： Jong-ho Park ,  Chang-Ki Jeon ,  Hyi-Jeong Park ,  Hye-mi Kim

发明人： Jong-ho Park ,  Chang-Ki Jeon ,  Hyi-Jeong Park ,  Hye-mi Kim

IPC分类号： H01L29/78 ,  H01L27/06 ,  H01L21/336 ,  H01L21/8249

CPC分类号： H01L21/8249 ,  H01L21/823412 ,  H01L21/823418 ,  H01L21/823807 ,  H01L21/823814 ,  H01L27/0623 ,  H01L27/0922 ,  H01L29/0653 ,  H01L29/41766 ,  H01L29/456 ,  H01L29/66719 ,  H01L29/66727 ,  H01L29/7809 ,  H01L29/7812

摘要： Provided are a semiconductor device and a method of fabricating the semiconductor device. The semiconductor device using a DMOS device includes: a semiconductor substrate, in which a first conductive type well is formed; a first conductive type gate electrode formed on the semiconductor substrate with a gate insulating layer intervening between the gate electrode and the semiconductor substrate; a second conductive type body electrode formed on the semiconductor substrate and separated from the gate electrode; a first conductive type drain electrode formed on the semiconductor substrate and separated from the gate electrode and the body electrode; a second conductive type first body region formed in the well under the body electrode; a second conductive type second body region extending from the first body region to the gate insulating layer and formed in the well; a first conductive type source region formed in the second body region and extending from the first body region to the gate insulating layer; and a first conductive type source electrode extending from the source region to surround the gate electrode on the semiconductor substrate with an insulating layer intervening between the source electrode and gate electrode.

摘要翻译： 提供半导体器件和制造半导体器件的方法。 使用DMOS器件的半导体器件包括：形成第一导电型阱的半导体衬底; 形成在所述半导体衬底上的第一导电型栅极电极，所述栅极绝缘层介于所述栅电极和所述半导体衬底之间; 形成在所述半导体基板上并与所述栅电极分离的第二导电型体电极; 形成在所述半导体基板上并与所述栅电极和所述主体电极分离的第一导电型漏电极; 形成在所述体电极下方的所述阱内的第二导电型第一体区域; 第二导电类型的第二主体区域，其从所述第一主体区域延伸到所述栅极绝缘层并形成在所述阱中; 形成在所述第二主体区域中并从所述第一主体区域延伸到所述栅极绝缘层的第一导电型源极区域; 以及第一导电型源电极，其从所述源极区域延伸，以在所述半导体衬底上围绕所述栅极电极，所述绝缘层介于所述源电极和栅电极之间。

公开(公告)号：US08330218B2

公开(公告)日：2012-12-11

申请号：US12870913

申请日：2010-08-30

申请人： Jong-ho Park ,  Hyi-Jeong Park ,  Hye-mi Kim ,  Chang-Ki Jeon

发明人： Jong-ho Park ,  Hyi-Jeong Park ,  Hye-mi Kim ,  Chang-Ki Jeon

IPC分类号： H01L29/76 ,  H01L29/94 ,  H01L31/062 ,  H01L31/113 ,  H01L31/119

CPC分类号： H01L21/8249 ,  H01L21/823412 ,  H01L21/823418 ,  H01L21/823807 ,  H01L21/823814 ,  H01L27/0623 ,  H01L27/0922 ,  H01L29/0653 ,  H01L29/41766 ,  H01L29/456 ,  H01L29/66719 ,  H01L29/66727 ,  H01L29/7809 ,  H01L29/7812

摘要： Provided are a semiconductor device and a method of fabricating the semiconductor device. The semiconductor device using a DMOS device includes: a semiconductor substrate, in which a first conductive type well is formed; a first conductive type gate electrode formed on the semiconductor substrate with a gate insulating layer intervening between the gate electrode and the semiconductor substrate; a second conductive type body electrode formed on the semiconductor substrate and separated from the gate electrode; a first conductive type drain electrode formed on the semiconductor substrate and separated from the gate electrode and the body electrode; a second conductive type first body region formed in the well under the body electrode; a second conductive type second body region extending from the first body region to the gate insulating layer and formed in the well; a first conductive type source region formed in the second body region and extending from the first body region to the gate insulating layer; and a first conductive type source electrode extending from the source region to surround the gate electrode on the semiconductor substrate with an insulating layer intervening between the source electrode and gate electrode.

摘要翻译： 提供半导体器件和制造半导体器件的方法。 使用DMOS器件的半导体器件包括：形成第一导电型阱的半导体衬底; 形成在所述半导体衬底上的第一导电型栅极电极，所述栅极绝缘层介于所述栅电极和所述半导体衬底之间; 形成在所述半导体基板上并与所述栅电极分离的第二导电型体电极; 形成在所述半导体基板上并与所述栅电极和所述主体电极分离的第一导电型漏电极; 形成在所述体电极下方的所述阱内的第二导电型第一体区域; 第二导电类型的第二主体区域，其从所述第一主体区域延伸到所述栅极绝缘层并形成在所述阱中; 形成在所述第二主体区域中并从所述第一主体区域延伸到所述栅极绝缘层的第一导电型源极区域; 以及第一导电型源电极，其从所述源极区域延伸，以在所述半导体衬底上围绕所述栅极电极，所述绝缘层介于所述源电极和栅电极之间。