公开(公告)号：US20090003901A1

公开(公告)日：2009-01-01

申请号：US12121912

申请日：2008-05-16

Applicant: Jae-hoon LEE ,  Jin-yoon KIM

Inventor： Jae-hoon LEE ,  Jin-yoon KIM

IPC: G03G15/20

CPC classification number: G03G15/2028

Abstract: A fusing device to fuse an image to a printing medium, the fusing device including: a heating roller; a first pressing roller, which presses the printing medium against the heating roller; and a second pressing roller which attached to the first pressing roller, to detach the printing medium from the first pressing roller. The first and second pressing rollers are biased against the heating roller such that the first and second pressing rollers move according to a change in a position of the heating roller.

Abstract translation: 一种将图像熔合到打印介质的定影装置，所述定影装置包括：加热辊; 第一按压辊，其将打印介质压靠在加热辊上; 以及第二加压辊，其连接到第一加压辊，以将打印介质从第一加压辊分离。 第一和第二按压辊偏压加热辊，使得第一和第二按压辊根据加热辊的位置的变化而移动。

公开(公告)号：US20130015465A1

公开(公告)日：2013-01-17

申请号：US13547996

申请日：2012-07-12

Applicant: Jae-hoon LEE

Inventor： Jae-hoon LEE

IPC: H01L33/32

CPC classification number: H01L33/40 ,  H01L33/025 ,  H01L33/32

Abstract: A nitride light-emitting device includes an N-type nitride semiconductor layer; an active layer disposed on the N-type nitride semiconductor layer; and a P-type nitride semiconductor layer disposed on the active layer. The P-type nitride semiconductor includes a heterojunction structure having a GaN layer and an N-type AlxInyGaN layer that is doped with an N-type dopant, and a two-dimensional electron gas (2DEG) layer formed in an interface between the GaN layer and the N-type AlxInyGaN layer.

Abstract translation: 氮化物发光器件包括N型氮化物半导体层; 设置在所述N型氮化物半导体层上的有源层; 以及设置在有源层上的P型氮化物半导体层。 P型氮化物半导体包括具有GaN层的异质结结构和掺杂有N型掺杂剂的N型Al x In y GaN层，以及形成在GaN层之间的界面中的二维电子气（2DEG）层 和N型Al x In y GaN层。

公开(公告)号：US20120013378A1

公开(公告)日：2012-01-19

申请号：US13151891

申请日：2011-06-02

Applicant: Min-sung KIM ,  II-kwon CHANG ,  Ji-ho LEW ,  Young-chul KIM ,  Joon-yul YUN ,  Don-woo LEE ,  So-youn Kim ,  Kyung-won MIN ,  Jae-hoon LEE

Inventor： Min-sung KIM ,  II-kwon CHANG ,  Ji-ho LEW ,  Young-chul KIM ,  Joon-yul YUN ,  Don-woo LEE ,  So-youn Kim ,  Kyung-won MIN ,  Jae-hoon LEE

IPC: H03K5/12

CPC classification number: G09G3/3685 ,  G09G2310/0259 ,  G09G2310/0286 ,  G09G2310/0291 ,  G09G2310/0294

Abstract: A slew rate boost circuit for an output buffer and an output buffer circuit for a source driver having the same are provided. In an output buffer including a pull-up unit providing a buffer output signal in a first level by receiving a buffer input signal and performing pull-up operation and a pull-down unit providing a buffer output signal in a second level having opposite phase from the first level by receiving the buffer input signal and performing pull-down operation, the slew rate boost circuit includes a first comparator generating a first boost signal to boost pull-up operation of the pull-up unit of the output buffer by inputting a first input signal and a second input signal and a second comparator generating a second boost signal to boost pull-down operation of the pull-down unit of the output buffer by inputting the first input signal and the second input signal.

Abstract translation: 提供了一种用于输出缓冲器的转换速率升压电路和用于其驱动器的输出缓冲电路。 在包括上拉单元的输出缓冲器中，所述上拉单元通过接收缓冲器输入信号并执行上拉操作来提供第一电平的缓冲器输出信号，以及下拉单元，其提供具有相反相位相反相位相反相位的第二电平的缓冲器输出信号 所述第一电平通过接收所述缓冲器输入信号并执行下拉操作，所述转换速率升压电路包括：第一比较器，产生第一升压信号，以通过输入第一升压信号来输出所述输出缓冲器的上拉单元的上拉操作; 输入信号和第二输入信号，第二比较器生成第二升压信号，以通过输入第一输入信号和第二输入信号来提升输出缓冲器的下拉单元的下拉操作。

公开(公告)号：US20120162522A1

公开(公告)日：2012-06-28

申请号：US13411401

申请日：2012-03-02

Applicant: Jae-hoon LEE

Inventor： Jae-hoon LEE

IPC: H04N5/60 ,  H04N5/50

CPC classification number: H04R5/02 ,  H04R5/04

Abstract: An audio/video (A/V) device having a volume control function for external audio reproduction units by using volume control buttons of a remote controller is provided. The A/V device includes speakers, an audio output port for externally outputting an audio signal, an audio signal processing unit for reproducing and amplifying the audio signal and applying the amplified audio signal to the speakers or the audio output port, a memory unit for storing volume control values, and a control unit for applying to the audio signal processing unit any of the volume control values stored in the memory based on whether the external audio reproduction unit is plugged in the audio output port. The control unit controls the audio signal processing unit to adjust the volume control values for the audio output port by the volume control buttons when the external audio reproduction unit is plugged in the audio output port.

公开(公告)号：US20120061727A1

公开(公告)日：2012-03-15

申请号：US13224482

申请日：2011-09-02

Applicant: Jae-hoon LEE ,  Ki-se Kim

Inventor： Jae-hoon LEE ,  Ki-se Kim

IPC: H01L29/778 ,  H01L21/335 ,  H01L21/329 ,  H01L29/872

CPC classification number: H01L23/373 ,  H01L23/3731 ,  H01L23/3736 ,  H01L23/3738 ,  H01L29/2003 ,  H01L29/205 ,  H01L29/66462 ,  H01L29/778 ,  H01L29/7787 ,  H01L29/872 ,  H01L2224/13 ,  H01L2924/12032 ,  H01L2924/00

Abstract: Gallium nitride (GaN) based semiconductor devices and methods of manufacturing the same. The GaN-based semiconductor device may include a heterostructure field effect transistor (HFET) or a Schottky diode, arranged on a heat dissipation substrate. The HFET device may include a GaN-based multi-layer having a recess region; a gate arranged in the recess region; and a source and a drain that are arranged on portions of the GaN-based multi-layer at two opposite sides of the gate (or the recess region). The gate, the source, and the drain may be attached to the heat dissipation substrate. The recess region may have a double recess structure. While such a GaN-based semiconductor device is being manufactured, a wafer bonding process and a laser lift-off process may be used.

Abstract translation: 基于氮化镓（GaN）的半导体器件及其制造方法。 GaN基半导体器件可以包括布置在散热衬底上的异质结构场效应晶体管（HFET）或肖特基二极管。 HFET器件可以包括具有凹陷区域的GaN基多层; 设置在所述凹部区域中的栅极; 以及布置在栅极（或凹部区域）的两个相对侧的GaN基多层的部分上的源极和漏极。 栅极，源极和漏极可以附接到散热基板。 凹部区域可以具有双凹槽结构。 虽然正在制造这种GaN基半导体器件，但是可以使用晶片接合工艺和激光剥离工艺。

公开(公告)号：US20070126680A1

公开(公告)日：2007-06-07

申请号：US11560562

申请日：2006-11-16

Applicant: Min-Koo HAN ,  Jae-hoon LEE

Inventor： Min-Koo HAN ,  Jae-hoon LEE

IPC: G09G3/36

CPC classification number: G09G3/3233 ,  G09G3/325 ,  G09G3/3291 ,  G09G2300/0426 ,  G09G2300/0465 ,  G09G2300/0809 ,  G09G2300/0819 ,  G09G2300/0842 ,  G09G2300/0866 ,  G09G2310/0262 ,  G09G2310/06 ,  G09G2320/043

Abstract: A display device for compensating for degradation of a threshold voltage of a driving thin-film transistor (“TFT”) and method for driving the display device includes a light-emitting element, wherein the light-emitting element emits light by a driving current applied thereto, a driving TFT controlling the magnitude of the driving current directed to the light-emitting element, a capacitor which charges a voltage which varies depending on a data voltage and a threshold voltage of the driving TFT and maintains a voltage corresponding to a difference between the data voltage and a gate voltage of the driving TFT, a first switching unit supplying the data voltage to the capacitor in response to a scan signal, and a second switching unit which is diode-connected and supplies the driving TFT with a light emitting signal.

Abstract translation: 用于补偿驱动薄膜晶体管（“TFT”）的阈值电压劣化的显示装置和驱动显示装置的方法包括发光元件，其中发光元件通过施加的驱动电流发光 控制针对发光元件的驱动电流的大小的驱动TFT，对根据数据电压和驱动TFT的阈值电压而变化的电压进行充电的电容器，并保持对应于 驱动TFT的数据电压和栅极电压，响应于扫描信号将数据电压提供给电容器的第一开关单元和二极管连接的第二开关单元，并向驱动TFT提供发光信号 。

公开(公告)号：US20120074424A1

公开(公告)日：2012-03-29

申请号：US13223800

申请日：2011-09-01

Applicant: Jae-hoon LEE

Inventor： Jae-hoon LEE

IPC: H01L33/32

CPC classification number: H01L29/7787 ,  H01L21/2007 ,  H01L29/155 ,  H01L29/2003 ,  H01L29/205 ,  H01L29/66212 ,  H01L29/66462 ,  H01L29/872

Abstract: Gallium nitride (GaN) based semiconductor devices and methods of manufacturing the same. The GaN-based semiconductor device may include a conductive heat dissipation substrate (that is, a thermal conductive substrate); an GaN-based multi-layer arranged on the heat dissipation substrate; and a Schottky electrode arranged on the GaN-based multi-layer. While such a GaN-based semiconductor device is being manufactured, a wafer bonding process and a laser lift-off process may be used.

Abstract translation: 基于氮化镓（GaN）的半导体器件及其制造方法。 GaN基半导体器件可以包括导电散热基板（即，导热基板）; 布置在散热基板上的GaN基多层; 以及布置在GaN基多层上的肖特基电极。 虽然正在制造这种GaN基半导体器件，但是可以使用晶片接合工艺和激光剥离工艺。