公开(公告)号：US20240085750A1

公开(公告)日：2024-03-14

申请号：US18448437

申请日：2023-08-11

Applicant: Japan Display Inc.

Inventor： Takuo KAITOH ,  Akihiro HANADA ,  Yoshinori TANAKA

IPC: G02F1/1362

CPC classification number: G02F1/136286

Abstract: A display device includes a first substrate, a gate wiring on the first substrate, a first insulating layer on the gate wiring, a source wiring on the first insulating layer and intersecting the gate wiring, a second insulating layer on the source wiring, a pixel electrode on the second insulating layer; and a first buffer layer between the first substrate and the first insulating layer. A refractive index of the first buffer layer is higher than a refractive index of the first substrate, at an interface between the first buffer layer and the first substrate, and the refractive index of the first buffer layer is lower than a refractive index of the first insulating layer, at an interface between the first buffer layer and the first insulating layer.

公开(公告)号：US20210088842A1

公开(公告)日：2021-03-25

申请号：US17110374

申请日：2020-12-03

Applicant: Japan Display Inc.

Inventor： Akio TAKIMOTO ,  Toshiki KANEKO ,  Takuo KAITOH ,  Kazuhiro NISHIYAMA ,  Hiroyuki KIMURA

IPC: G02F1/1335 ,  G02F1/1333

Abstract: According to one embodiment, an electronic apparatus includes a camera, a liquid crystal panel including a display portion overlaid on the camera, a light guide having a first side surface and a main surface opposed to the liquid crystal panel and a first through hole, and a light source opposed to the first side surface. The camera is provided in the first through hole.

公开(公告)号：US20220223782A1

公开(公告)日：2022-07-14

申请号：US17657266

申请日：2022-03-30

Applicant: Japan Display Inc.

Inventor： Toshihiko ITOGA ,  Takuo KAITOH

IPC: H01L41/187 ,  H01L41/047 ,  H01L41/04

Abstract: The purpose of the present invention is to form a semiconductor device in which an active area laminated on a PZT (lead zirconate titanate (PbZrTiO3) sensor having a piezoelectric effect. The main structure of the present invention is as follows. A semiconductor device having a PZT (lead zirconate titanate (PbZrTiO3)) sensor including: the PZT sensor including a lower electrode formed on a glass substrate, a PZT, an upper electrode, a first inorganic insulating film covering the upper electrode, and an upper wiring formed on the first inorganic insulating film and connected to the upper electrode through a first through-hole formed in the first inorganic insulating film; in which a polyimide film is formed over the PZT sensor; a plurality of TFTs are formed on the polyimide film, and a thickness of the polyimide film is 5 μm or more.

公开(公告)号：US20220163858A1

公开(公告)日：2022-05-26

申请号：US17666831

申请日：2022-02-08

Applicant: Japan Display Inc.

Inventor： Kazuhiro NISHIYAMA ,  Akio TAKIMOTO ,  Toshiki KANEKO ,  Takuo KAITOH ,  Hiroyuki Kimura

IPC: G02F1/1362 ,  H04M1/02

Abstract: According to one embodiment, an electronic device includes a liquid crystal panel and a camera. The liquid crystal panel includes a display area and an incident light control area. The display area includes a pixel electrode. The camera overlaps the incident light control area. The incident light control area includes an annular line, and a control electrode formed inside the annular line to be connected to the annular line. A time to apply a voltage to the control electrode is shorter than a time to apply a voltage to the pixel electrode.

公开(公告)号：US20220149203A1

公开(公告)日：2022-05-12

申请号：US17579740

申请日：2022-01-20

Applicant: Japan Display Inc.

Inventor： Akihiro HANADA ,  Takuo KAITOH ,  Masashi TSUBUKU

IPC: H01L29/786

Abstract: The purpose of the present invention is to suppress a variation in a threshold voltage (Δ Vth) in a Thin Film Transistor (TFT) using an oxide semiconductor. The present invention takes a structure as follows to attain this purpose. A semiconductor device having TFT using an oxide semiconductor including: a channel region, a source region, a drain region, and a transition region between the channel region and the source region and between the channel region and the drain region, in which a resistivity of the transition region is smaller than that of the channel region, and larger than that of the source region or the drain region; a source electrode is formed overlapping the source region, and a drain electrode is formed overlapping the drain region; and a thickness of the transition region of the oxide semiconductor is larger than a thickness of the channel region of the oxide semiconductor.

公开(公告)号：US20140106640A1

公开(公告)日：2014-04-17

申请号：US14105496

申请日：2013-12-13

Applicant: Panasonic Liquid Crystal Display Co., Ltd. ,  Japan Display Inc.

Inventor： Terunori SAITOU ,  Hidekazu MIYAKE ,  Takuo KAITOH ,  Yoshiharu OWAKU

IPC: G02F1/1333

CPC classification number: G02F1/13458 ,  G02F1/1333 ,  G02F1/136204 ,  G02F2001/133388 ,  G02F2202/103 ,  G02F2202/22

Abstract: A method of manufacturing a liquid crystal display device having a substrate with a display area, a control area adjacent to the display area, and terminals. The method includes forming an interlayer insulating film and an a-Si film below an image signal line in the display area and below a line in the same layer as the image signal line in the control area, forming a scribing line outside the terminals, forming a ground line in the same layer as the scan line outside the scribing line, forming the interlayer insulating film outside the terminal, without forming the a-Si film on the interlayer insulating film, forming a static electricity protection line coupled to the terminal on the interlayer insulating film, the static electricity protection line being coupled to other static electricity protection lines outside the ground line, and, after the steps above, separating the substrate along the scribing line.

Abstract translation: 一种液晶显示装置的制造方法，其具有具有显示区域的基板，与显示区域相邻的控制区域以及端子。 该方法包括在显示区域中的图像信号线下方形成层间绝缘膜和a-Si膜，并且在与控制区域中的图像信号线相同的层下面的线下方，在端子外部形成划线，形成 与划线之外的扫描线相同的层中的接地线，在端子外部形成层间绝缘膜，而不在层间绝缘膜上形成a-Si膜，形成在端子上连接的静电保护线 层间绝缘膜，静电保护线与地线外的其他静电保护线相连，并且在上述步骤之后，沿着划刻线分离衬底。

公开(公告)号：US20250113616A1

公开(公告)日：2025-04-03

申请号：US18884253

申请日：2024-09-13

Applicant: Japan Display Inc.

Inventor： Akihiro HANADA ,  Takuo KAITOH ,  Motochika YUKAWA

IPC: H01L27/12 ,  G02F1/1368

Abstract: A display device includes an oxide semiconductor layer including a polycrystalline structure, a gate insulating layer provided on the oxide semiconductor layer, a gate electrode opposite to the oxide semiconductor layer on the gate insulating layer, a first silicon nitride layer provided in contact with the gate electrode, a source wiring provided in contact with the first silicon nitride layer and electrically connected to the oxide semiconductor layer, a second silicon nitride layer provided in contact with the source wiring and the first silicon nitride layer, a first transparent conductive layer provided in contact with the second silicon nitride layer and electrically connected to the oxide semiconductor layer, and a third silicon nitride layer provided in contact with the first transparent conductive layer and the second silicon nitride layer, wherein a channel length of the gate electrode is 2.0 μm or less.

公开(公告)号：US20240402553A1

公开(公告)日：2024-12-05

申请号：US18673809

申请日：2024-05-24

Applicant: Japan Display Inc.

Inventor： Akihiro HANADA ,  Takuo KAITOH ,  Ryo ONODERA ,  Motochika YUKAWA

IPC: G02F1/1362 ,  G02F1/1368

Abstract: A display device includes a first conductive layer arranged on a first substrate and extending in a first direction, a first insulating film arranged on the first conductive layer, a second conductive layer arranged on the first insulating film and extending in a second direction intersecting the first direction, a second insulating film arranged on the second conductive layer and extending in the first direction and the second direction, a transparent conductive layer arranged on the second insulating film and extending in the first direction and the second direction, a third insulating film arranged on the first conductive layer, and a second substrate opposing the first substrate.

公开(公告)号：US20230253506A1

公开(公告)日：2023-08-10

申请号：US18163286

申请日：2023-02-02

Applicant: Japan Display Inc.

Inventor： Ryo ONODERA ,  Akihiro HANADA ,  Takuo KAITOH ,  Tomoyuki ITO

IPC: H01L29/786 ,  G02F1/1362 ,  G02F1/1368

CPC classification number: H01L29/7869 ,  G02F1/136286 ,  G02F1/1368

Abstract: According to one embodiment, a semiconductor device includes a first gate electrode formed to be integrated with a scanning line, an oxide semiconductor layer, a first signal line and a second signal line in contact with the oxide semiconductor layer, and a second gate electrode disposed opposing the first gate electrode with the oxide semiconductor layer interposed therebetween, and connected to the first gate electrode, wherein the second gate electrode does not overlap the first signal line, but overlaps the second signal line.

公开(公告)号：US20220173247A1

公开(公告)日：2022-06-02

申请号：US17522258

申请日：2021-11-09

Applicant: Japan Display Inc.

Inventor： Akihiro HANADA ,  Hajime WATAKABE ,  Takuo KAITOH ,  Ryo ONODERA

IPC: H01L29/786

Abstract: A semiconductor device includes a thin-film transistor. The thin-film transistor comprises an oxide semiconductor layer, a gate insulating layer, a gate electrode overlapped on the oxide semiconductor layer through the gate insulating layer, a source electrode in contact with the oxide semiconductor layer, a drain electrode in contact with the oxide semiconductor layer and a first metal layer in contact with the oxide semiconductor layer and disposed between the source electrode and the drain electrode at a distance from the source electrode and the drain electrode.