公开(公告)号：US20220221954A1

公开(公告)日：2022-07-14

申请号：US17557757

申请日：2021-12-21

申请人： Japan Display Inc.

发明人： Tomoyuki ITO ,  Kazuki MATSUNAGA ,  Shigesumi ARAKI ,  Kazuhide MOCHIZUKI

IPC分类号： G06F3/042 ,  G02F1/1333 ,  G02F1/1335 ,  G02F1/1343 ,  H01L27/146 ,  G06F3/041

摘要： According to one embodiment, a liquid crystal display device comprises first and second substrates and a liquid crystal layer. The first substrate includes a base member, a sensor between the base member and the liquid crystal layer, a collimation layer between the sensor and the liquid crystal layer, an insulating layer between the sensor and the collimation layer, an insulating layer, and a light shielding layer between the sensor and the base member. The sensor is configured to output a signal corresponding to light incident from a liquid crystal layer side. The light shielding layer overlaps with an outer peripheral part of the first collimation layer.

公开(公告)号：US20240168335A1

公开(公告)日：2024-05-23

申请号：US18502178

申请日：2023-11-06

申请人： Japan Display Inc.

发明人： Akihiro HANADA ,  Takuo KAITOH ,  Ryo ONODERA ,  Tomoyuki ITO ,  Yoshinori TANAKA

IPC分类号： G02F1/13357 ,  G02F1/1334 ,  H01L27/12

CPC分类号： G02F1/133615 ,  G02F1/1334 ,  H01L27/1225

摘要： A display device includes a first nitride insulating film arranged on a first substrate, a gate electrode arranged along a first direction on the first nitride insulating film, a second nitride insulating film arranged on the gate electrode, a first oxide insulating film arranged on the second nitride insulating film, and an oxide semiconductor layer arranged on the first oxide insulating film, wherein the gate electrode has a first titanium layer, an aluminum layer, and a second titanium layer stacked in order from the first nitride insulating film side, and a thickness of the second titanium layer is greater than a thickness of the first titanium layer.

公开(公告)号：US20240160069A1

公开(公告)日：2024-05-16

申请号：US18509920

申请日：2023-11-15

申请人： Japan Display Inc.

发明人： Akihiro HANADA ,  Takuo KAITOH ,  Tomoyuki ITO ,  Yoshinori TANAKA

IPC分类号： G02F1/1362 ,  G02F1/1333 ,  G02F1/13357

CPC分类号： G02F1/136286 ,  G02F1/133365 ,  G02F1/133615

摘要： A display device includes a wiring region including a gate wiring, a source wiring intersecting the gate wiring, and a first insulating layer between the gate wiring and the source wiring and an opening region including a pixel electrode on the first insulating layer and adjacent to the wiring region. The first insulating layer includes a first oxide insulating layer and a first nitride insulating layer, the first oxide insulating layer is disposed over the wiring region and the opening region, the first nitride insulating layer is disposed in the wiring region and includes a first opening overlapping the opening region, and the pixel electrode overlaps the first opening.

公开(公告)号：US20220246764A1

公开(公告)日：2022-08-04

申请号：US17724512

申请日：2022-04-20

申请人： Japan Display Inc.

发明人： Isao SUZUMURA ,  Hajime WATAKABE ,  Akihiro HANADA ,  Ryo ONODERA ,  Tomoyuki ITO

IPC分类号： H01L29/786

摘要： The present invention addresses the problem of: realizing a TFT that uses an oxide semiconductor and that is capable of maintaining stable characteristics even in the case where the TFT is miniaturized; and realizing a display device that has high-definition pixels using such a TFT. To solve this problem, the present invention has the following configuration. A semiconductor device including an oxide semiconductor TFT formed using an oxide semiconductor film 109, the semiconductor device being characterized in that: the channel length of the oxide semiconductor TFT is 1.3 to 2.3 μm; and the sheet resistance of a source region 1092 and a drain region 1091 of the oxide semiconductor film 109 is 1.4 to 20 KΩ/□.

公开(公告)号：US20220140117A1

公开(公告)日：2022-05-05

申请号：US17511633

申请日：2021-10-27

申请人： Japan Display Inc.

发明人： Akihiro HANADA ,  Takuo KAITOH ,  Ryo ONODERA ,  Takashi OKADA ,  Tomoyuki ITO ,  Toshiki KANEKO

IPC分类号： H01L29/66 ,  H01L29/786 ,  H01L21/385

摘要： According to one embodiment, a method for manufacturing a semiconductor device, includes forming a first insulating film which covers a gate electrode, forming an island-shaped oxide semiconductor in contact with the first insulating film, forming a second insulating film which covers the oxide semiconductor, forming a source electrode in contact with the oxide semiconductor, forming a drain electrode in contact with the oxide semiconductor, forming a third insulating film which covers the source electrode and the drain electrode and forming a channel region between the source electrode and the drain electrode by supplying oxygen from the third insulating film to the oxide semiconductor via the second insulating film.

公开(公告)号：US20200326571A1

公开(公告)日：2020-10-15

申请号：US16911930

申请日：2020-06-25

申请人： Japan Display Inc.

发明人： Akihiro HANADA ,  Tomoyuki ITO

IPC分类号： G02F1/1368 ,  H01L29/786 ,  H01L27/12 ,  H01L27/32

摘要： The purpose of the present invention is to suppress the change in characteristics of the TFT formed on the polyimide substrate. An example of the present invention is a display device having a first TFT of an oxide semiconductor film and a second TFT of a polysilicon film formed on the substrate made of resin including the first TFT and the second TFT do not overlap in a plan view, a distance between the second TFT and the substrate is shorter than a distance between the first TFT and the substrate in a cross sectional view, a second polysilicon film is formed between the oxide semiconductor film and the substrate, the second polysilicon film is made of the same material as the first polysilicon film and is formed on the same layer that the first polysilicon is formed.

公开(公告)号：US20230253506A1

公开(公告)日：2023-08-10

申请号：US18163286

申请日：2023-02-02

申请人： Japan Display Inc.

发明人： Ryo ONODERA ,  Akihiro HANADA ,  Takuo KAITOH ,  Tomoyuki ITO

IPC分类号： H01L29/786 ,  G02F1/1362 ,  G02F1/1368

CPC分类号： H01L29/7869 ,  G02F1/136286 ,  G02F1/1368

摘要： According to one embodiment, a semiconductor device includes a first gate electrode formed to be integrated with a scanning line, an oxide semiconductor layer, a first signal line and a second signal line in contact with the oxide semiconductor layer, and a second gate electrode disposed opposing the first gate electrode with the oxide semiconductor layer interposed therebetween, and connected to the first gate electrode, wherein the second gate electrode does not overlap the first signal line, but overlaps the second signal line.

公开(公告)号：US20230127181A1

公开(公告)日：2023-04-27

申请号：US17974601

申请日：2022-10-27

申请人： Japan Display Inc.

发明人： Tomoyuki ITO

IPC分类号： G06V40/13 ,  G06V10/143 ,  G06V10/147

摘要： According to one embodiment, an optical sensor includes a display panel and a sensor panel under at least a part of the display panel. The display panel includes pixels arranged two-dimensionally. The sensor panel includes a sensor layer including sensor elements arranged two-dimensionally, a collimator layer on the sensor layer including openings, and lenses on the collimator layer. A first number of openings in the openings are on one of the sensor elements. The first number of lenses in the lenses are on the first number of openings. The first number of lenses are at positions different for each of the sensor elements.

公开(公告)号：US20220229329A1

公开(公告)日：2022-07-21

申请号：US17578723

申请日：2022-01-19

申请人： Japan Display Inc.

发明人： Tomoyuki ITO ,  Kazuki MATSUNAGA ,  Shigesumi ARAKI ,  Kazuhide MOCHIZUKI

IPC分类号： G02F1/1335 ,  G02F1/1343 ,  G02F1/1333 ,  G06V40/13

摘要： According to one embodiment, a display device comprises a collimating layer including first to third openings, first to third color filters overlaid on the first to third openings, respectively, a first sensor outputting a first detection signal corresponding to light made incident through the first opening and the first color filter, a second sensor outputting a second detection signal corresponding to light made incident through the second opening and the second color filter, and a third sensor outputting a third detection signal corresponding to light made incident through the third opening and the third color filter.

公开(公告)号：US20200259020A1

公开(公告)日：2020-08-13

申请号：US16785662

申请日：2020-02-10

申请人： Japan Display Inc.

发明人： Hajime WATAKABE ,  Tomoyuki ITO ,  Toshihide JINNAI ,  lsao SUZUMURA ,  Akihiro HANADA ,  Ryo ONODERA

IPC分类号： H01L29/786 ,  H01L27/12 ,  H01L29/24 ,  H01L29/423 ,  H01L29/49 ,  H01L21/02 ,  H01L21/426 ,  H01L21/4757 ,  H01L21/4763 ,  H01L29/66

摘要： A semiconductor device includes thin film transistors each having an oxide semiconductor. The oxide semiconductor has a channel region, a drain region, a source region, and low concentration regions which are lower in impurity concentration than the drain region and the source region. The low concentration regions are located between the channel region and the drain region, and between the channel region and the source region. Each of the thin film transistors has a gate insulating film on the channel region and the low concentration regions, an aluminum oxide film on a first part of the gate insulating film, the first part being located on the channel region, and a gate electrode on the aluminum oxide film and a second part of the gate insulating film, the second part being located on the low concentration regions.