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    Semiconductor device
    4.
    发明授权
    Semiconductor device 有权

    公开(公告)号：US12224332B2

    公开(公告)日：2025-02-11

    申请号：US17657168

    申请日：2022-03-30

    Applicant: Japan Display Inc.

    Inventor： Akihiro Hanada ,  Takuo Kaitoh ,  Hajime Watakabe

    IPC: H01L29/49 ,  G02F1/1368 ,  H01L27/12 ,  H01L29/786

    Abstract: The purpose of the present invention is to suppress a change in characteristics of a TFT using an oxide semiconductor film caused by that oxygen in the oxide semiconductor film is extracted by metal electrode. The main structure of the present invention is as follows. A semiconductor device having a TFT, in which a gate insulating film is formed on a gate electrode, and an oxide semiconductor film is formed on the gate insulating film; the oxide semiconductor film including a channel region, a drain region, and a source region; in which a metal nitride film is formed on a top surface of the gate electrode in an opposing portion to the channel region in a plan view; and the metal nitride film is not formed at a part of the top surface of the gate electrode.

    Liquid crystal display device and manufacturing method thereof
    7.
    发明授权
    Liquid crystal display device and manufacturing method thereof 有权
    液晶显示装置及其制造方法

    公开(公告)号：US09372376B2

    公开(公告)日：2016-06-21

    申请号：US14105496

    申请日：2013-12-13

    Applicant: Japan Display Inc. ,  Panasonic Liquid Crystal Display Co., Ltd.

    Inventor： Terunori Saitou ,  Hidekazu Miyake ,  Takuo Kaitoh ,  Yoshiharu Owaku

    IPC: G02F1/1345 ,  G02F1/1362 ,  G02F1/1333

    CPC classification number: G02F1/13458 ,  G02F1/1333 ,  G02F1/136204 ,  G02F2001/133388 ,  G02F2202/103 ,  G02F2202/22

    Abstract: A method of manufacturing a liquid crystal display device having a substrate with a display area, a control area adjacent to the display area, and terminals. The method includes forming an interlayer insulating film and an a-Si film below an image signal line in the display area and below a line in the same layer as the image signal line in the control area, forming a scribing line outside the terminals, forming a ground line in the same layer as the scan line outside the scribing line, forming the interlayer insulating film outside the terminal, without forming the a-Si film on the interlayer insulating film, forming a static electricity protection line coupled to the terminal on the interlayer insulating film, the static electricity protection line being coupled to other static electricity protection lines outside the ground line, and, after the steps above, separating the substrate along the scribing line.

    Abstract translation: 一种液晶显示装置的制造方法，其具有具有显示区域的基板，与显示区域相邻的控制区域以及端子。 该方法包括在显示区域中的图像信号线下方形成层间绝缘膜和a-Si膜，并且在与控制区域中的图像信号线相同的层下面的线下方，在端子外部形成划线，形成 与划线之外的扫描线相同的层中的接地线，在端子外部形成层间绝缘膜，而不在层间绝缘膜上形成a-Si膜，形成在端子上连接的静电保护线 层间绝缘膜，静电保护线与地线外的其他静电保护线相连，并且在上述步骤之后，沿着划刻线分离衬底。

    Semiconductor device comprising lightly doped drain (LDD) region between channel and drain region
    8.
    发明授权
    Semiconductor device comprising lightly doped drain (LDD) region between channel and drain region 有权

    公开(公告)号：US12191398B2

    公开(公告)日：2025-01-07

    申请号：US17579740

    申请日：2022-01-20

    Applicant: Japan Display Inc.

    Inventor： Akihiro Hanada ,  Takuo Kaitoh ,  Masashi Tsubuku

    IPC: H01L29/78 ,  H01L29/786

    Abstract: The purpose of the present invention is to suppress a variation in a threshold voltage (Δ Vth) in a Thin Film Transistor (TFT) using an oxide semiconductor. The present invention takes a structure as follows to attain this purpose. A semiconductor device having TFT using an oxide semiconductor including: a channel region, a source region, a drain region, and a transition region between the channel region and the source region and between the channel region and the drain region, in which a resistivity of the transition region is smaller than that of the channel region, and larger than that of the source region or the drain region; a source electrode is formed overlapping the source region, and a drain electrode is formed overlapping the drain region; and a thickness of the transition region of the oxide semiconductor is larger than a thickness of the channel region of the oxide semiconductor.

    Semiconductor device
    9.
    发明授权
    Semiconductor device 有权

    公开(公告)号：US12132117B2

    公开(公告)日：2024-10-29

    申请号：US17561996

    申请日：2021-12-27

    Applicant: Japan Display Inc.

    Inventor： Takuo Kaitoh ,  Akihiro Hanada ,  Takashi Okada

    IPC: H01L27/12 ,  H01L29/786

    CPC classification number: H01L29/7869 ,  H01L29/78618

    Abstract: According to one embodiment, a semiconductor device includes a first insulating film formed of silicon nitride, a second insulating film disposed above the first insulating film and formed of silicon oxide, including a first region and a peripheral region surrounding the first region and thinner than the first region, an oxide semiconductor disposed on the second insulating film and intersecting the first region, a source electrode overlapping the peripheral region and a drain electrode overlapping the peripheral region. The first region is located between the source electrode and the drain electrode and separated from the source electrode and the drain electrode.

    Electronic device
    10.
    发明授权
    Electronic device 有权

    公开(公告)号：US11815774B2

    公开(公告)日：2023-11-14

    申请号：US17666831

    申请日：2022-02-08

    Applicant: Japan Display Inc.

    Inventor： Kazuhiro Nishiyama ,  Akio Takimoto ,  Toshiki Kaneko ,  Takuo Kaitoh ,  Hiroyuki Kimura

    IPC: G02F1/1362 ,  H04M1/02

    CPC classification number: G02F1/136286 ,  G02F1/136209 ,  H04M1/0264

    Abstract: According to one embodiment, an electronic device includes a liquid crystal panel and a camera. The liquid crystal panel includes a display area and an incident light control area. The display area includes a pixel electrode. The camera overlaps the incident light control area. The incident light control area includes an annular line, and a control electrode formed inside the annular line to be connected to the annular line. A time to apply a voltage to the control electrode is shorter than a time to apply a voltage to the pixel electrode.

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