公开(公告)号：US12158661B2

公开(公告)日：2024-12-03

申请号：US18502178

申请日：2023-11-06

Applicant: Japan Display Inc.

Inventor： Akihiro Hanada ,  Takuo Kaitoh ,  Ryo Onodera ,  Tomoyuki Ito ,  Yoshinori Tanaka

IPC: G02F1/13357 ,  G02F1/1334 ,  H01L27/12

Abstract: A display device includes a first nitride insulating film arranged on a first substrate, a gate electrode arranged along a first direction on the first nitride insulating film, a second nitride insulating film arranged on the gate electrode, a first oxide insulating film arranged on the second nitride insulating film, and an oxide semiconductor layer arranged on the first oxide insulating film, wherein the gate electrode has a first titanium layer, an aluminum layer, and a second titanium layer stacked in order from the first nitride insulating film side, and a thickness of the second titanium layer is greater than a thickness of the first titanium layer.

公开(公告)号：US12068399B2

公开(公告)日：2024-08-20

申请号：US17511633

申请日：2021-10-27

Applicant: Japan Display Inc.

Inventor： Akihiro Hanada ,  Takuo Kaitoh ,  Ryo Onodera ,  Takashi Okada ,  Tomoyuki Ito ,  Toshiki Kaneko

IPC: H01L29/66 ,  H01L21/385 ,  H01L27/12 ,  H01L29/786

CPC classification number: H01L29/66969 ,  H01L21/385 ,  H01L27/1225 ,  H01L29/7869

Abstract: According to one embodiment, a method for manufacturing a semiconductor device, includes forming a first insulating film which covers a gate electrode, forming an island-shaped oxide semiconductor in contact with the first insulating film, forming a second insulating film which covers the oxide semiconductor, forming a source electrode in contact with the oxide semiconductor, forming a drain electrode in contact with the oxide semiconductor, forming a third insulating film which covers the source electrode and the drain electrode and forming a channel region between the source electrode and the drain electrode by supplying oxygen from the third insulating film to the oxide semiconductor via the second insulating film.

公开(公告)号：US12166131B2

公开(公告)日：2024-12-10

申请号：US18328788

申请日：2023-06-05

Applicant: Japan Display Inc.

Inventor： Hajime Watakabe ,  Tomoyuki Ito ,  Toshihide Jinnai ,  Isao Suzumura ,  Akihiro Hanada ,  Ryo Onodera

IPC: H01L27/12 ,  H01L21/02 ,  H01L21/426 ,  H01L21/4757 ,  H01L21/4763 ,  H01L29/24 ,  H01L29/423 ,  H01L29/49 ,  H01L29/66 ,  H01L29/786 ,  G02F1/1368

Abstract: A semiconductor device includes thin film transistors each having an oxide semiconductor. The oxide semiconductor has a channel region, a drain region, a source region, and low concentration regions which are lower in impurity concentration than the drain region and the source region. The low concentration regions are located between the channel region and the drain region, and between the channel region and the source region. Each of the thin film transistors has a gate insulating film on the channel region and the low concentration regions, an aluminum oxide film on a first part of the gate insulating film, the first part being located on the channel region, and a gate electrode on the aluminum oxide film and a second part of the gate insulating film, the second part being located on the low concentration regions.

公开(公告)号：US11177388B2

公开(公告)日：2021-11-16

申请号：US16785662

申请日：2020-02-10

Applicant: Japan Display Inc.

Inventor： Hajime Watakabe ,  Tomoyuki Ito ,  Toshihide Jinnai ,  Isao Suzumura ,  Akihiro Hanada ,  Ryo Onodera

IPC: H01L21/00 ,  H01L27/00 ,  H01L29/00 ,  H01L29/786 ,  H01L27/12 ,  H01L29/24 ,  H01L29/423 ,  H01L29/49 ,  H01L21/02 ,  H01L21/426 ,  H01L21/4757 ,  H01L21/4763 ,  H01L29/66 ,  G02F1/1368

Abstract: A semiconductor device includes thin film transistors each having an oxide semiconductor. The oxide semiconductor has a channel region, a drain region, a source region, and low concentration regions which are lower in impurity concentration than the drain region and the source region. The low concentration regions are located between the channel region and the drain region, and between the channel region and the source region. Each of the thin film transistors has a gate insulating film on the channel region and the low concentration regions, an aluminum oxide film on a first part of the gate insulating film, the first part being located on the channel region, and a gate electrode on the aluminum oxide film and a second part of the gate insulating film, the second part being located on the low concentration regions.

公开(公告)号：US11737341B2

公开(公告)日：2023-08-22

申请号：US17654266

申请日：2022-03-10

Applicant: Japan Display Inc.

Inventor： Tomoyuki Ito ,  Jin Hirosawa

IPC: G09G5/00 ,  H10K59/65 ,  G06V10/147 ,  G02B27/30 ,  G06V40/13

CPC classification number: H10K59/65 ,  G02B27/30 ,  G06V10/147 ,  G06V40/1318

Abstract: According to one embodiment, a detection device comprises a base, a sensor layer, a collimator, a plurality of lenses, and a spacer. The sensor layer is placed on the base and includes a plurality of sensors which output detection signals corresponding to incident light. The collimator layer is placed on the sensor layer and includes a collimator having a plurality of openings which overlap the sensors, respectively. The plurality of lenses are placed on the collimator layer and overlap the openings, respectively. The spacer protrudes more than the lenses in a stacking direction of the base, the sensor layer and the collimator layer.

公开(公告)号：US11710340B2

公开(公告)日：2023-07-25

申请号：US17940239

申请日：2022-09-08

Applicant: Japan Display Inc.

Inventor： Makoto Uchida ,  Takanori Tsunashima ,  Masahiro Tada ,  Tomoyuki Ito ,  Takashi Nakamura

IPC: G06V40/13 ,  H01L27/146 ,  G06F3/044

CPC classification number: G06V40/1318 ,  H01L27/14678 ,  G06F3/044

Abstract: A photodiode array is provided and includes insulating substrate; photodiodes arrayed in detection region of insulating substrate, photodiodes configured to output signal in accordance with light incident on photodiodes; first switching elements corresponding to photodiodes and including first semiconductor made of oxide semiconductor; gate lines coupled with first switching elements and extending in first direction; signal lines coupled with first switching elements and extending in second direction intersecting first direction; and gate line drive circuit including second switching element that includes second semiconductor made of polycrystalline silicone, gate line drive circuit being provided in peripheral region outside detection region and configured to drive gate lines, wherein photodiodes includes translucent conductive layer that is cathode, and translucent conductive layer overlaps none of signal lines in plan view.

公开(公告)号：US11573449B2

公开(公告)日：2023-02-07

申请号：US17578723

申请日：2022-01-19

Applicant: Japan Display Inc.

Inventor： Tomoyuki Ito ,  Kazuki Matsunaga ,  Shigesumi Araki ,  Kazuhide Mochizuki

IPC: G02F1/1335 ,  G02F1/1333 ,  G06V40/13 ,  G02F1/1343

Abstract: According to one embodiment, a display device comprises a collimating layer including first to third openings, first to third color filters overlaid on the first to third openings, respectively, a first sensor outputting a first detection signal corresponding to light made incident through the first opening and the first color filter, a second sensor outputting a second detection signal corresponding to light made incident through the second opening and the second color filter, and a third sensor outputting a third detection signal corresponding to light made incident through the third opening and the third color filter.

公开(公告)号：US11550429B2

公开(公告)日：2023-01-10

申请号：US17557757

申请日：2021-12-21

Applicant: Japan Display Inc.

Inventor： Tomoyuki Ito ,  Kazuki Matsunaga ,  Shigesumi Araki ,  Kazuhide Mochizuki

IPC: G02F1/135 ,  G02F1/1343 ,  G02F1/1335 ,  G02F1/1333 ,  G06F3/042 ,  H01L27/146 ,  G06F3/041 ,  G02F1/1362

Abstract: According to one embodiment, a liquid crystal display device comprises first and second substrates and a liquid crystal layer. The first substrate includes a base member, a sensor between the base member and the liquid crystal layer, a collimation layer between the sensor and the liquid crystal layer, an insulating layer between the sensor and the collimation layer, an insulating layer, and a light shielding layer between the sensor and the base member. The sensor is configured to output a signal corresponding to light incident from a liquid crystal layer side. The light shielding layer overlaps with an outer peripheral part of the first collimation layer.

公开(公告)号：US11450135B2

公开(公告)日：2022-09-20

申请号：US17033040

申请日：2020-09-25

Applicant: Japan Display Inc.

Inventor： Makoto Uchida ,  Takanori Tsunashima ,  Masahiro Tada ,  Tomoyuki Ito ,  Takashi Nakamura

IPC: G06V40/13 ,  H01L27/146 ,  G06F3/044

Abstract: A fingerprint detection apparatus comprising: an insulating substrate; a plurality of photoelectric conversion elements arrayed in a detection region of the insulating substrate, each of the photoelectric conversion elements configured to output a signal in accordance with light incident on each of the photoelectric conversion elements; first switching element, each corresponding to each of the photoelectric conversion elements and including a first semiconductor made of oxide semiconductor; a plurality of gate lines coupled with the first switching elements and extending in a first direction; a plurality of signal lines coupled with the first switching elements and extending in a second direction intersecting the first direction; and a gate line drive circuit including a second switching element that includes a second semiconductor made of polycrystalline silicone, the gate line drive circuit being provided in a peripheral region outside the detection region and configured to drive the gate lines.

公开(公告)号：US12105388B2

公开(公告)日：2024-10-01

申请号：US18509920

申请日：2023-11-15

Applicant: Japan Display Inc.

Inventor： Akihiro Hanada ,  Takuo Kaitoh ,  Tomoyuki Ito ,  Yoshinori Tanaka

IPC: G02F1/1333 ,  G02F1/13357 ,  G02F1/1343 ,  G02F1/1362 ,  G02F1/1368

CPC classification number: G02F1/136286 ,  G02F1/133345 ,  G02F1/133365 ,  G02F1/133615 ,  G02F1/134309 ,  G02F1/1368

Abstract: A display device includes a wiring region including a gate wiring, a source wiring intersecting the gate wiring, and a first insulating layer between the gate wiring and the source wiring and an opening region including a pixel electrode on the first insulating layer and adjacent to the wiring region. The first insulating layer includes a first oxide insulating layer and a first nitride insulating layer, the first oxide insulating layer is disposed over the wiring region and the opening region, the first nitride insulating layer is disposed in the wiring region and includes a first opening overlapping the opening region, and the pixel electrode overlaps the first opening.