公开(公告)号：US07442552B2

公开(公告)日：2008-10-28

申请号：US11861369

申请日：2007-09-26

申请人： Joseph K. V. Comeau ,  Adele M. Mahoney ,  Jason P. Ritter ,  Gerald J. Scilla ,  Charles H. Wilson

发明人： Joseph K. V. Comeau ,  Adele M. Mahoney ,  Jason P. Ritter ,  Gerald J. Scilla ,  Charles H. Wilson

IPC分类号： G01N31/00

CPC分类号： G01N27/205 ,  Y10T436/16 ,  Y10T436/20

摘要： A test environment and an associated method of testing and analyzing a semiconductor package material containing a molding compound, for stability in a sustained oxygen environment. Test samples are exposed to a pressurized gas containing oxygen, under elevated temperature below the glass transition temperature of the molding compound. Control samples are exposed to a pressurized inert gas under similar or more severe conditions of gas pressure, temperature, and humidity. At least one characteristic common to the test samples and the control samples is measured. A determination is made as to whether there exists at least one significant difference between the at least one measured characteristic of the test samples and the control samples.

摘要翻译： 用于测试和分析含有模塑料的半导体封装材料的测试环境和相关方法，用于在持续的氧气环境中稳定。 在低于模塑料的玻璃化转变温度的高温下，将测试样品暴露于含氧气的加压气体中。 在气体压力，温度和湿度的类似或更严格的条件下，对照样品暴露于加压惰性气体。 测量样品和对照样品的至少一个特征。 确定测试样品的至少一个测量特征与对照样品之间是否存在至少一个显着差异。

公开(公告)号：US20090064763A1

公开(公告)日：2009-03-12

申请号：US12175703

申请日：2008-07-18

申请人： Joseph K. V. Comeau ,  Adele M. Mahoney ,  Jason P. Ritter ,  Gerald J. Scilla ,  Charles H. Wilson

发明人： Joseph K. V. Comeau ,  Adele M. Mahoney ,  Jason P. Ritter ,  Gerald J. Scilla ,  Charles H. Wilson

IPC分类号： G01M19/00

CPC分类号： G01N27/205 ,  Y10T436/16 ,  Y10T436/20

摘要： A test environment and an associated method of testing and analyzing a semiconductor package material containing a molding compound, for stability in a sustained oxygen environment. Test samples are exposed to a pressurized gas containing oxygen, under elevated temperature below the glass transition temperature of the molding compound. Control samples are exposed to a pressurized inert gas under similar or more severe conditions of gas pressure, temperature, and humidity. At least one characteristic common to the test samples and the control samples is measured. A determination is made as to whether there exists at least one significant difference between the at least one measured characteristic of the test samples and the control samples.

摘要翻译： 用于测试和分析含有模塑料的半导体封装材料的测试环境和相关方法，用于在持续的氧气环境中稳定。 在低于模塑料的玻璃化转变温度的高温下，将测试样品暴露于含氧气的加压气体中。 在气体压力，温度和湿度的类似或更严格的条件下，对照样品暴露于加压惰性气体。 测量样品和对照样品的至少一个特征。 确定测试样品的至少一个测量特征与对照样品之间是否存在至少一个显着差异。

公开(公告)号：US07300796B2

公开(公告)日：2007-11-27

申请号：US10658859

申请日：2003-09-09

申请人： Joseph K. V. Comeau ,  Adele M. Mahoney ,  Jason P. Ritter ,  Gerald J. Scilla ,  Charles H. Wilson

发明人： Joseph K. V. Comeau ,  Adele M. Mahoney ,  Jason P. Ritter ,  Gerald J. Scilla ,  Charles H. Wilson

IPC分类号： G01N31/00

CPC分类号： G01N27/205 ,  Y10T436/16 ,  Y10T436/20

摘要： A test environment and an associated method of testing and analyzing a semiconductor package material containing a molding compound, for stability in a sustained oxygen environment. Test samples are exposed to a pressurized gas containing oxygen, under elevated temperature below the glass transition temperature of the molding compound. Control samples are exposed to a pressurized inert gas under similar or more severe conditions of gas pressure, temperature, and humidity. At least one characteristic common to the test samples and the control samples is measured. A determination is made as to whether there exists at least one significant difference between the at least one measured characteristic of the test samples and the control samples.

摘要翻译： 用于测试和分析含有模塑料的半导体封装材料的测试环境和相关方法，用于在持续的氧气环境中稳定。 在低于模塑料的玻璃化转变温度的高温下，将测试样品暴露于含氧气的加压气体中。 在气体压力，温度和湿度的类似或更严格的条件下，对照样品暴露于加压惰性气体。 测量样品和对照样品的至少一个特征。 确定测试样品的至少一个测量特征与对照样品之间是否存在至少一个显着差异。

公开(公告)号：US07771541B2

公开(公告)日：2010-08-10

申请号：US11689570

申请日：2007-03-22

申请人： Claude Blais ,  Eric Duchesne ,  Kang-Wook Lee ,  Sylvain Ouimet ,  Gerald J. Scilla

发明人： Claude Blais ,  Eric Duchesne ,  Kang-Wook Lee ,  Sylvain Ouimet ,  Gerald J. Scilla

IPC分类号： B08B7/00 ,  C23F1/00

CPC分类号： H01L21/02057 ,  H01L23/3128 ,  H01L2224/16225 ,  H01L2224/73204 ,  H01L2924/00011 ,  H01L2924/00014 ,  H01L2924/15311 ,  H01L2224/0401

摘要： A method of removing and/or reducing undesirable contaminants removes residues including graphitic layers, fluorinate layers, calcium sulfate (CaSO4) particles, tin oxides and organotin, from a chip passivation layer surface. The method uses a plasma process with an argon and oxygen mixture with optimized plasma parameters to remove both the graphitic and fluorinated layers and to reduce the level of the inorganic/tin oxides/organotin residue from an integrated circuit wafer while keeping the re-deposition of metallic compounds is negligible. This invention discloses the plasma processes that organics are not re-deposited from polymers to solder ball surfaces and tin oxide thickness does not increase on solder balls. The ratio of argon/oxygen is from about 50% to about 99% Ar and about 1% to about 50% O2 by volume. Incoming wafers, after treatment, are then diced to form individual chips that are employed to produce flip chip plastic ball grid array packages.

摘要翻译： 去除和/或减少不需要的污染物的方法从芯片钝化层表面去除残留物，包括石墨层，氟化物层，硫酸钙（CaSO 4）颗粒，氧化锡和有机锡。 该方法使用具有优化的等离子体参数的具有氩和氧混合物的等离子体处理以除去石墨和氟化层，并且从集成电路晶片中降低无机/锡氧化物/有机锡残余物的水平，同时保持重新沉积 金属化合物可忽略不计。 本发明公开了等离子体方法，有机物不会从聚合物重新沉积到焊球表面，氧化锡厚度在焊球上不增加。 氩/氧的比例为约50％至约99％Ar和约1％至约50％体积的O 2。 接下来的处理后的晶片被切割成用于制造倒装芯片塑料球栅阵列封装的单个芯片。

公开(公告)号：US20100218894A1

公开(公告)日：2010-09-02

申请号：US12780339

申请日：2010-05-14

申请人： Claude Blais ,  Eric Duchesne ,  Kang-Wook Lee ,  Sylvain Ouimet ,  Gerald J. Scilla

发明人： Claude Blais ,  Eric Duchesne ,  Kang-Wook Lee ,  Sylvain Ouimet ,  Gerald J. Scilla

IPC分类号： C23F1/08 ,  H01L21/306

CPC分类号： H01L21/02057 ,  H01L23/3128 ,  H01L2224/16225 ,  H01L2224/73204 ,  H01L2924/00011 ,  H01L2924/00014 ,  H01L2924/15311 ,  H01L2224/0401

摘要： A method of removing and/or reducing undesirable contaminants removes residues including graphitic layers, fluorinate layers, calcium sulfate (CaSO4) particles, tin oxides and organotin, from a chip passivation layer surface. The method uses a plasma process with an argon and oxygen mixture with optimized plasma parameters to remove both the graphitic and fluorinated layers and to reduce the level of the inorganic/tin oxides/organotin residue from an integrated circuit wafer while keeping the re-deposition of metallic compounds is negligible. This invention discloses the plasma processes that organics are not re-deposited from polymers to solder ball surfaces and tin oxide thickness does not increase on solder balls. The ratio of argon/oxygen is from about 50% to about 99% Ar and about 1% to about 50% O2 by volume. Incoming wafers, after treatment, are then diced to form individual chips that are employed to produce flip chip plastic ball grid array packages.

摘要翻译： 去除和/或减少不需要的污染物的方法从芯片钝化层表面去除残留物，包括石墨层，氟化物层，硫酸钙（CaSO 4）颗粒，氧化锡和有机锡。 该方法使用具有优化的等离子体参数的具有氩和氧混合物的等离子体处理以除去石墨和氟化层，并且从集成电路晶片中降低无机/锡氧化物/有机锡残余物的水平，同时保持重新沉积 金属化合物可忽略不计。 本发明公开了等离子体方法，有机物不会从聚合物重新沉积到焊球表面，氧化锡厚度在焊球上不增加。 氩/氧的比例为约50％至约99％Ar和约1％至约50％体积的O 2。 接下来的处理后的晶片被切割成用于制造倒装芯片塑料球栅阵列封装的单个芯片。

公开(公告)号：US20080233755A1

公开(公告)日：2008-09-25

申请号：US11689570

申请日：2007-03-22

申请人： Claude Blais ,  Eric Duchesne ,  Kang-Wook Lee ,  Sylvain Ouimet ,  Gerald J. Scilla

发明人： Claude Blais ,  Eric Duchesne ,  Kang-Wook Lee ,  Sylvain Ouimet ,  Gerald J. Scilla

IPC分类号： H01L21/302 ,  C23F1/00

CPC分类号： H01L21/02057 ,  H01L23/3128 ,  H01L2224/16225 ,  H01L2224/73204 ,  H01L2924/00011 ,  H01L2924/00014 ,  H01L2924/15311 ,  H01L2224/0401

摘要： A method of removing and/or reducing undesirable contaminants removes residues including graphitic layers, fluorinate layers, calcium sulfate (CaSO4) particles, tin oxides and organotin, from a chip passivation layer surface. The method uses a plasma process with an argon and oxygen mixture with optimized plasma parameters to remove both the graphitic and fluorinated layers and to reduce the level of the inorganic/tin oxides/organotin residue from an integrated circuit wafer while keeping the re-deposition of metallic compounds is negligible. This invention discloses the plasma processes that organics are not re-deposited from polymers to solder ball surfaces and tin oxide thickness does not increase on solder balls. The ratio of argon/oxygen is from about 50% to about 99% Ar and about 1% to about 50% O2 by volume. Incoming wafers, after treatment, are then diced to form individual chips that are employed to produce flip chip plastic ball grid array packages.

摘要翻译： 去除和/或减少不需要的污染物的方法从芯片钝化层表面去除残留物，包括石墨层，氟化物层，硫酸钙（CaSO 4）颗粒，氧化锡和有机锡。 该方法使用具有优化的等离子体参数的具有氩和氧混合物的等离子体处理以除去石墨和氟化层，并且从集成电路晶片中降低无机/锡氧化物/有机锡残余物的水平，同时保持重新沉积 金属化合物可忽略不计。 本发明公开了等离子体方法，有机物不会从聚合物重新沉积到焊球表面，氧化锡厚度在焊球上不增加。 氩/氧的比例为约50％至约99％Ar和约1％至约50％O 2体积％。 接下来的处理后的晶片被切割成用于制造倒装芯片塑料球栅阵列封装的单个芯片。