摘要:
Provided is a metal-oxide semiconductor (MOS) transistor containing a metal gate pattern. The semiconductor device includes a p-channel metal-oxide semiconductor (PMOS) transistor including a semiconductor substrate, a first insulating film formed on the semiconductor substrate, a first metal gate conductive film formed on the first insulating film, and a nitrogen diffusion blocking film formed between the first insulating film and the first metal gate conductive film, and an n-channel metal-oxide semiconductor (NMOS) transistor including the semiconductor substrate, a second insulating film formed on the semiconductor substrate, a second metal gate conductive film formed on the second insulating film, and a reaction blocking film formed of metal nitride and formed between the second insulating film and the second metal gate conductive film. According to the inventive concept, a reaction between a metal gate film and an insulating film may be minimized so as to result in a highly reliable MOS transistor.
摘要:
An electronic apparatus and method of controlling or performing a plurality of executable functions. The electronic apparatus includes: a display that displays an image corresponding to at least one executable function; an input unit that receives input from a user; and a controller that changes a size of the image according to the input from the user and performs at least one of automatic execution of the function and automatic closure of the function being performed in accordance with an extent of a change in the size of the image.
摘要:
A semiconductor integrated circuit device may include a semiconductor substrate, a static memory cell on the semiconductor substrate, a tensile stress film on the pull-down transistors, and a compressive stress film on the pass transistors. The static memory cell may include multiple pull-up transistors and pull-down transistors, which form a latch, and multiple pass transistors may be used to access the latch.
摘要:
A computing device including a display unit to display a screen, a touch input to receive a user's touch input on the display unit, and a controller to control the display unit to display at least a part of a plurality of user interface (UI) items on the screen with a predetermined degree of transparency, to scroll the UI items in a predetermined direction and to sequentially display the UI items on the screen according to the user's touch input, and to increase the degree of transparency of the UI items if the UI items are not scrolled any more.
摘要:
A telephone number searching system supporting an automatic telephone connection in which a telephone number is searched for through the internet and automatically dialed, and a method therefor. A web server is connected to a telephone number database for storing multiple predetermined telephone numbers. An information terminal is equipped with a web browser which is selectively connected to the web server for submitting a search request to receive a telephone number service and searching a telephone number from the telephone number database to display at least one searched telephone number. One number is selected by a user among the displayed telephone numbers and dialed automatically by a telephone plug-in to set up a communication channel through the telephone.
摘要:
A computing device including a display unit to display a screen, a touch input to receive a user's touch input on the display unit, and a controller to control the display unit to display at least a part of a plurality of user interface (UI) items on the screen with a predetermined degree of transparency, to scroll the UI items in a predetermined direction and to sequentially display the UI items on the screen according to the user's touch input, and to increase the degree of transparency of the UI items if the UI items are not scrolled any more.
摘要:
A semiconductor integrated circuit device may include a semiconductor substrate, a static memory cell on the semiconductor substrate, a tensile stress film on the pull-down transistors, and a compressive stress film on the pass transistors. The static memory cell may include multiple pull-up transistors and pull-down transistors, which form a latch, and multiple pass transistors may be used to access the latch.