公开(公告)号：US12172194B2

公开(公告)日：2024-12-24

申请号：US18496222

申请日：2023-10-27

Applicant: KIOXIA CORPORATION

Inventor： Minako Inukai ,  Masatoshi Terayama

IPC: B08B13/00 ,  B08B3/02 ,  H01L21/67

Abstract: A substrate processing apparatus for cleaning and drying a substrate under processing, including supplying a cleaning liquid onto the substrate under processing to form a cleaning liquid layer, supplying a gas onto the substrate under processing to partially remove the cleaning liquid layer and thus generate a first dry region on the substrate under processing, expanding the first dry region to generate a second dry region by controlling the movement speed of the boundary between the cleaning liquid layer and the first dry region to be less than or equal to a predetermined speed, and further expanding the second dry region to generate a third dry region.

公开(公告)号：US11264233B2

公开(公告)日：2022-03-01

申请号：US16876291

申请日：2020-05-18

Applicant: KIOXIA CORPORATION

Inventor： Kyo Otsubo ,  Hideaki Sakurai ,  Minako Inukai

IPC: H01L21/02 ,  B08B3/04 ,  B08B3/08 ,  B08B7/00 ,  B08B7/04 ,  H01L21/67 ,  G03F7/00

Abstract: According to one embodiment, a method for cleaning a substrate includes first cleaning process and second cleaning process. The first cleaning process subjects a substrate to a first cleaning method. The second cleaning process subjects the substrate to a second cleaning method that is different from the first cleaning method and is subsequent to the first cleaning process. The first cleaning method includes at least one of acidic cleaning or alkaline cleaning. The second cleaning method includes freeze cleaning.

公开(公告)号：US11833550B2

公开(公告)日：2023-12-05

申请号：US17695512

申请日：2022-03-15

Applicant: Kioxia Corporation

Inventor： Minako Inukai ,  Masatoshi Terayama

IPC: H01L21/67 ,  B08B13/00 ,  B08B3/02

CPC classification number: B08B13/00 ,  B08B3/02 ,  H01L21/67034 ,  H01L21/67253

Abstract: A substrate processing apparatus for cleaning and drying a substrate under processing, including supplying a cleaning liquid onto the substrate under processing to form a cleaning liquid layer, supplying a gas onto the substrate under processing to partially remove the cleaning liquid layer and thus generate a first dry region on the substrate under processing, expanding the first dry region to generate a second dry region by controlling the movement speed of the boundary between the cleaning liquid layer and the first dry region to be less than or equal to a predetermined speed, and further expanding the second dry region to generate a third dry region.

公开(公告)号：US11651953B2

公开(公告)日：2023-05-16

申请号：US16904058

申请日：2020-06-17

Applicant: KIOXIA CORPORATION

Inventor： Minako Inukai ,  Hideaki Sakurai ,  Kyo Otsubo ,  Tetsuo Takemoto

IPC: H01L21/02 ,  B08B3/04 ,  B08B7/00 ,  B08B3/08 ,  B08B3/12 ,  H01L21/67 ,  H01L21/66

CPC classification number: H01L21/02101 ,  B08B3/041 ,  B08B3/08 ,  B08B3/123 ,  B08B7/0014 ,  H01L21/67051 ,  H01L21/67248 ,  H01L22/12 ,  H01L21/02082

Abstract: According to one embodiment, a method including supplying a liquid onto a substrate, solidifying the liquid on the substrate to form a solidified body, and melting the solidified body of the liquid on the substrate is provided. When solidifying the liquid, an internal pressure of the liquid on the substrate is varied.