公开(公告)号：US09709386B1

公开(公告)日：2017-07-18

申请号：US15091522

申请日：2016-04-05

Applicant: KLA-Tencor Corporation

Inventor： Lena Nicolaides ,  Timothy Goodwin ,  Raul V. Tan ,  Shifang Li

IPC: G01B11/28 ,  G01B11/06

CPC classification number: G01B11/0641 ,  G01B2210/56 ,  H01L22/12

Abstract: Disclosed are methods and apparatus for measuring a characteristics of a through-silicon via (TSV) structure. A beam profile reflectivity (BPR) tool is used to move to a first xy position having a TSV structure. The BPR tool is then used to obtain an optimum focus of at the first xy position by adjusting the z position to a first optimum z position for obtaining measurements at the first xy position. Via the BPR tool, reflectivity measurements for a plurality of angles of incidence are obtained at the first xy position. One or more film thicknesses for the TSV structure are determined based on the reflectivity measurements. A z position can also be recorded and used to determine a height of such TSV structure, as well as one or more adjacent xy positions.

公开(公告)号：US09640449B2

公开(公告)日：2017-05-02

申请号：US14688739

申请日：2015-04-16

Applicant: KLA-Tencor Corporation

Inventor： Timothy Goodwin ,  Lena Nicolaides ,  Mohan Mahadevan ,  Paul Horn ,  Shifang Li

IPC: G01N21/88 ,  G01N21/95 ,  H01L21/66 ,  G01B11/16

CPC classification number: H01L22/24 ,  G01B11/16 ,  G01N21/8806 ,  G01N21/95 ,  G01N21/9503 ,  G01N2201/06113 ,  H01L22/12

Abstract: Photoreflectance spectroscopy is used to measure strain at or near the edge of a wafer in a production process. The strain measurement is used to anticipate defects and make prospective corrections in later stages of the production process. Strain measurements are used to associate various production steps with defects to enhance later production processes.

公开(公告)号：US20150371910A1

公开(公告)日：2015-12-24

申请号：US14688739

申请日：2015-04-16

Applicant: KLA-Tencor Corporation

Inventor： Timothy Goodwin ,  Lena Nicolaides ,  Mohan Mahadevan ,  Paul Horn ,  Shifang Li

IPC: H01L21/66 ,  G01N21/88 ,  G01N21/95

CPC classification number: H01L22/24 ,  G01B11/16 ,  G01N21/8806 ,  G01N21/95 ,  G01N21/9503 ,  G01N2201/06113 ,  H01L22/12

Abstract: Photoreflectance spectroscopy is used to measure strain at or near the edge of a wafer in a production process. The strain measurement is used to anticipate defects and make prospective corrections in later stages of the production process. Strain measurements are used to associate various production steps with defects to enhance later production processes.

Abstract translation: 光反射光谱法用于在生产过程中测量晶片边缘处或附近的应变。 应变测量用于预测缺陷，并在生产过程的后期进行前瞻性更正。 应变测量用于将各种生产步骤与缺陷相关联，以增强后续生产过程。