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公开(公告)号：US20180150952A1
公开(公告)日：2018-05-31
申请号：US15627834
申请日：2017-06-20
Applicant: KLA-Tencor Corporation
Inventor： Kaushik Sah , Thomas Krah , Shifang Li , Heiko Eisenbach , Moritz Stoerring
Abstract: Wafer edge profile images are analyzed at locations around a bonded wafer, which may have a top wafer and a carrier wafer. An offset curve is generated based on the wafer edge profile images. Displacement of the top wafer to the carrier wafer is determined based on the offset curve. The wafer edge profile images may be generated at multiple locations around the wafer. The wafer edge profile images may be shadowgram images. A system to determine displacement of the top wafer to the carrier wafer can include an imaging system connected with a controller.
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公开(公告)号：US20170278236A1
公开(公告)日：2017-09-28
申请号：US15255605
申请日：2016-09-02
Applicant: KLA-Tencor Corporation
Inventor： Shifang Li , Lena Nicolaides , Paul Horn , Richard Graetz
CPC classification number: G01B11/06 , G06T7/0004 , G06T2207/30148
Abstract: A system is configured to perform metrology on a front surface, a back surface opposite the front surface, and/or an edge between the front surface and the back surface of a wafer. This can provide all wafer metrology and/or metrology of thin films on the back surface of the wafer. In an example, the thickness and/or optical properties of a thin film on a back surface of a wafer can be determined using a ratio of a greyscale image of a bright field light emerging from the back surface of the wafer under test to that of a reference wafer.
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公开(公告)号：US09658150B2
公开(公告)日：2017-05-23
申请号：US14990233
申请日：2016-01-07
Applicant: KLA-TENCOR CORPORATION
Inventor： Shifang Li , Youxian Wen
CPC classification number: G01N21/21 , G01B11/02 , G01B11/06 , G01B11/30 , G01B11/303 , G01N21/9501 , G01N2021/399 , G01N2021/8845 , G01N2021/8848 , G03F7/70608 , G03F7/70625
Abstract: A system determines a value, such as a thickness, surface roughness, material concentration, and/or critical dimension, of a layer on a wafer based on normalized signals and reflected total intensities. A light source directs a beam at a surface of the wafer. A sensor receives the reflected beam and provides at least a pair of polarization channels. The signals from the polarization channels are received by a controller, which normalizes a difference between a pair of the signals to generate the normalized result. The value of the wafer is determined through analyzing the signal with a modeling of the system.
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4.发明申请METHOD OF IMPROVING LATERAL RESOLUTION FOR HEIGHT SENSOR USING DIFFERENTIAL DETECTION TECHNOLOGY FOR SEMICONDUCTOR INSPECTION AND METROLOGY 审中-公开使用差分检测技术改进高分辨率传感器的半导体检测和方法的方法公开(公告)号：US20170067732A1
公开(公告)日：2017-03-09
申请号：US15255255
申请日：2016-09-02
Applicant: KLA-Tencor Corporation
Inventor： Shifang Li
CPC classification number: G01B11/0608 , G01B2210/56 , G02B1/11 , G02B5/0808 , G02B7/38 , G02B27/0025 , G02B27/09 , G02B27/0911 , G02B27/14 , G03F7/70
Abstract: A system that can be used for used for semiconductor height inspection and metrology includes a complementary plate that is used with a beam splitter to create desired astigmatism and to remove chromatic aberration. Simultaneous optimization of lateral resolution and sensitivity can be enabled. The complementary plate can be made of the same material and have the same thickness as the beam splitter.
Abstract translation: 可用于半导体高度检测和计量的系统包括与分束器一起使用的互补板，以产生所需的散光并消除色差。 可以同时优化横向分辨率和灵敏度。 互补板可以由相同的材料制成，并且具有与分束器相同的厚度。
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公开(公告)号：US10563973B2
公开(公告)日：2020-02-18
申请号：US15255605
申请日：2016-09-02
Applicant: KLA-Tencor Corporation
Inventor： Shifang Li , Lena Nicolaides , Paul Horn , Richard Graetz
Abstract: A system is configured to perform metrology on a front surface, a back surface opposite the front surface, and/or an edge between the front surface and the back surface of a wafer. This can provide all wafer metrology and/or metrology of thin films on the back surface of the wafer. In an example, the thickness and/or optical properties of a thin film on a back surface of a wafer can be determined using a ratio of a greyscale image of a bright field light emerging from the back surface of the wafer under test to that of a reference wafer.
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Patent Agency Ranking
公开(公告)号：US10540759B2
公开(公告)日：2020-01-21
申请号：US15627834
申请日：2017-06-20
Applicant: KLA-Tencor Corporation
Inventor： Kaushik Sah , Thomas Krah , Shifang Li , Heiko Eisenbach , Moritz Stoerring
IPC: G06K9/00 , G06T7/00 , G06T7/73 , H01L21/66 , G06T7/13 , G01B11/00 , G01B11/24 , G06T7/60 , H01L21/306
Abstract: Wafer edge profile images are analyzed at locations around a bonded wafer, which may have a top wafer and a carrier wafer. An offset curve is generated based on the wafer edge profile images. Displacement of the top wafer to the carrier wafer is determined based on the offset curve. The wafer edge profile images may be generated at multiple locations around the wafer. The wafer edge profile images may be shadowgram images. A system to determine displacement of the top wafer to the carrier wafer can include an imaging system connected with a controller.
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公开(公告)号：US09885656B2
公开(公告)日：2018-02-06
申请号：US14967432
申请日：2015-12-14
Applicant: KLA-TENCOR CORPORATION
Inventor： Shifang Li , Paul Horn
CPC classification number: G01N21/55 , G01B11/0608 , G01N21/8806 , G01N21/9501 , G01N2201/0612 , G01S17/48 , G02B21/0016 , G02B21/241 , G03F7/70625
Abstract: This semiconductor inspection and metrology system includes a knife-edge mirror configured to receive light reflected from a wafer. The knife-edge mirror is positioned at a focal point of the light reflected from the wafer such that the reflective film on the knife-edge mirror is configured to block at least some of the light reflected from the wafer. The portion of blocked light changes when the light reflected from the wafer is under-focused or over-focused. At least one sensor receives the light reflected from the wafer. Whether the light is under-focused or over-focused can be determined using a reading from the at least one sensor. A height of an illuminated region on the surface of the wafer can be determined using such a reading from the at least one sensor.
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公开(公告)号：US09747520B2
公开(公告)日：2017-08-29
申请号：US15068320
申请日：2016-03-11
Applicant: KLA-TENCOR CORPORATION
Inventor： Shifang Li , Youxian Wen , Sven Schwitalla , Prashant Aji , Lena Nicolaides
CPC classification number: G06K9/6201 , G03F1/84 , G06T5/50 , G06T7/001 , G06T2207/10016 , G06T2207/10024 , G06T2207/20224 , G06T2207/30148 , H04N5/2256
Abstract: Systems and methods for enhancing inspection sensitivity to detect defects in wafers using an inspection tool are disclosed. A plurality of light emitting diodes illuminate at least a portion of a wafer and capture a set of grayscale images. A residual signal is determined in each image of the grayscale image set and the residual signal is subtracted from each image of the grayscale image set. Defects are identified based on the subtracted grayscale image set. Models of the inspection tool and wafer may be built and refined in some embodiments of the disclosed systems and methods.
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9.发明授权公开(公告)号：US09640449B2
公开(公告)日：2017-05-02
申请号：US14688739
申请日：2015-04-16
Applicant: KLA-Tencor Corporation
Inventor： Timothy Goodwin , Lena Nicolaides , Mohan Mahadevan , Paul Horn , Shifang Li
CPC classification number: H01L22/24 , G01B11/16 , G01N21/8806 , G01N21/95 , G01N21/9503 , G01N2201/06113 , H01L22/12
Abstract: Photoreflectance spectroscopy is used to measure strain at or near the edge of a wafer in a production process. The strain measurement is used to anticipate defects and make prospective corrections in later stages of the production process. Strain measurements are used to associate various production steps with defects to enhance later production processes.
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公开(公告)号：US20170082424A1
公开(公告)日：2017-03-23
申请号：US15269892
申请日：2016-09-19
Applicant: KLA-Tencor Corporation
Inventor： Shifang Li
CPC classification number: G01B11/0608 , G01B2210/56 , G02B21/0032 , G02B21/0096 , G02B27/0025
Abstract: A system includes a first beam splitter, a second beam splitter, and a mirror. The second beam splitter can produce two lines of light, which are received by at least one sensor. The two lines of light have different focal heights on the wafer. A distance between the second beam splitter and the mirror can be configured to change a focal height on the wafer. A height of an illuminated region on a surface of the wafer relative to a normal surface of the wafer can be determined using the two lines of light.
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