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公开(公告)号：US10563973B2
公开(公告)日：2020-02-18
申请号：US15255605
申请日：2016-09-02
Applicant: KLA-Tencor Corporation
Inventor： Shifang Li , Lena Nicolaides , Paul Horn , Richard Graetz
Abstract: A system is configured to perform metrology on a front surface, a back surface opposite the front surface, and/or an edge between the front surface and the back surface of a wafer. This can provide all wafer metrology and/or metrology of thin films on the back surface of the wafer. In an example, the thickness and/or optical properties of a thin film on a back surface of a wafer can be determined using a ratio of a greyscale image of a bright field light emerging from the back surface of the wafer under test to that of a reference wafer.
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2.发明申请公开(公告)号：US20180003648A1
公开(公告)日：2018-01-04
申请号：US15692863
申请日：2017-08-31
Applicant: KLA-Tencor Corporation
Inventor： Lena Nicolaides , Mohan Mahadevan , Alex Salnik , Scott A. Young
Abstract: Disclosed are methods and apparatus for detecting defects or reviewing defects in a semiconductor sample. The system has a brightfield (BF) module for directing a BF illumination beam onto a sample and detecting an output beam reflected from the sample in response to the BF illumination beam. The system has a modulated optical reflectance (MOR) module for directing a pump and probe beam to the sample and detecting a MOR output beam from the probe spot in response to the pump beam and the probe beam. The system includes a processor for analyzing the BF output beam from a plurality of BF spots to detect defects on a surface or near the surface of the sample and analyzing the MOR output beam from a plurality of probe spots to detect defects that are below the surface of the sample.
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公开(公告)号：US10599951B2
公开(公告)日：2020-03-24
申请号：US16364140
申请日：2019-03-25
Applicant: KLA-Tencor Corporation
Inventor： Kris Bhaskar , Laurent Karsenti , Brad Ries , Lena Nicolaides , Richard (Seng Wee) Yeoh , Stephen Hiebert
IPC: G06K9/62
Abstract: Methods and systems for training a neural network for defect detection in low resolution images are provided. One system includes an inspection tool that includes high and low resolution imaging subsystems and one or more components that include a high resolution neural network and a low resolution neural network. Computer subsystem(s) of the system are configured for generating a training set of defect images. At least one of the defect images is generated synthetically by the high resolution neural network using an image generated by the high resolution imaging subsystem. The computer subsystem(s) are also configured for training the low resolution neural network using the training set of defect images as input. In addition, the computer subsystem(s) are configured for detecting defects on another specimen by inputting the images generated for the other specimen by the low resolution imaging subsystem into the trained low resolution neural network.
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公开(公告)号：US20170278236A1
公开(公告)日：2017-09-28
申请号：US15255605
申请日：2016-09-02
Applicant: KLA-Tencor Corporation
Inventor： Shifang Li , Lena Nicolaides , Paul Horn , Richard Graetz
CPC classification number: G01B11/06 , G06T7/0004 , G06T2207/30148
Abstract: A system is configured to perform metrology on a front surface, a back surface opposite the front surface, and/or an edge between the front surface and the back surface of a wafer. This can provide all wafer metrology and/or metrology of thin films on the back surface of the wafer. In an example, the thickness and/or optical properties of a thin film on a back surface of a wafer can be determined using a ratio of a greyscale image of a bright field light emerging from the back surface of the wafer under test to that of a reference wafer.
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5.发明申请公开(公告)号：US20150370175A1
公开(公告)日：2015-12-24
申请号：US14741866
申请日：2015-06-17
Applicant: KLA-Tencor Corporation
Inventor： Lena Nicolaides , Ben-ming Benjamin Tsai , Prashant A. Aji , Michael Gasvoda , Stanley E. Stokowski , Guoheng Zhao , Youxian Wen , Mohan Mahadevan , Paul D. Horn , Wolfgang Vollrath , Isabella T. Lewis
CPC classification number: G01N21/9503 , G01N2201/06113 , G03F7/7085 , H01L22/12
Abstract: Disclosed are methods and apparatus for inspecting and processing semiconductor wafers. The system includes an edge detection system for receiving each wafer that is to undergo a photolithography process. The edge detection system comprises an illumination channel for directing one or more illumination beams towards a side, top, and bottom edge portion that are within a border region of the wafer. The edge detection system also includes a collection module for collecting and sensing output radiation that is scattered or reflected from the edge portion of the wafer and an analyzer module for locating defects in the edge portion and determining whether each wafer is within specification based on the sensed output radiation for such wafer. The photolithography system is configured for receiving from the edge detection system each wafer that has been found to be within specification. The edge detection system is coupled in-line with the photolithography system.
Abstract translation: 公开了用于检查和处理半导体晶片的方法和装置。 该系统包括边缘检测系统，用于接收将进行光刻工艺的每个晶片。 边缘检测系统包括用于将一个或多个照明光束朝向位于晶片的边界区域内的侧面，顶部和底部边缘部分引导的照明通道。 边缘检测系统还包括用于收集和感测从晶片的边缘部分散射或反射的输出辐射的收集模块和用于定位边缘部分中的缺陷的分析器模块，并且基于所感测到的每个晶片是否在规格范围内 这种晶片的输出辐射。 光刻系统被配置为从边缘检测系统接收已发现在规格范围内的每个晶片。 边缘检测系统与光刻系统成对连接。
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Patent Agency Ranking
公开(公告)号：US08962351B1
公开(公告)日：2015-02-24
申请号：US14021593
申请日：2013-09-09
Applicant: KLA-Tencor Corporation
Inventor： Alex Salnik , Bin-Ming Benjamin Tsai , Lena Nicolaides
IPC: H01L21/66 , G01R31/26 , G01N21/95 , H01L21/265
CPC classification number: H01L22/10 , G01N21/9501 , G01R31/2601 , H01L21/265 , H01L22/12 , H01L22/20
Abstract: The present invention may include a first dopant metrology system configured to measure a first plurality of values of at least one parameter of a wafer, an ion implanter configured to implant a plurality of ions into the wafer, a second dopant metrology system configured to measure a second plurality of values of at least one parameter of the wafer following ion implantation of the wafer by the implanter, wherein the first dopant metrology system and the second dopant metrology system are communicatively coupled, an annealer configured to anneal the wafer following ion implantation, and a third dopant metrology system configured to measure a third plurality of values of at least one parameter of the wafer following annealing of the wafer by the annealer, wherein the second dopant metrology system and the third dopant metrology system are communicatively coupled.
Abstract translation: 本发明可以包括配置成测量晶片的至少一个参数的第一多个值的第一掺杂剂计量系统，被配置成将多个离子注入到晶片中的离子注入机;配置成测量晶片的第二掺杂剂计量系统 其中所述第一掺杂剂计量系统和所述第二掺杂剂测量系统通信耦合，所述退火器被配置为在离子注入之后退火所述晶片，以及 第三掺杂剂测量系统，被配置为在由所述退火炉退火所述晶片之后测量所述晶片的至少一个参数的第三多个值，其中所述第二掺杂剂测量系统和所述第三掺杂剂计量系统通信地耦合。
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7.发明授权公开(公告)号：US09709386B1
公开(公告)日：2017-07-18
申请号：US15091522
申请日：2016-04-05
Applicant: KLA-Tencor Corporation
Inventor： Lena Nicolaides , Timothy Goodwin , Raul V. Tan , Shifang Li
CPC classification number: G01B11/0641 , G01B2210/56 , H01L22/12
Abstract: Disclosed are methods and apparatus for measuring a characteristics of a through-silicon via (TSV) structure. A beam profile reflectivity (BPR) tool is used to move to a first xy position having a TSV structure. The BPR tool is then used to obtain an optimum focus of at the first xy position by adjusting the z position to a first optimum z position for obtaining measurements at the first xy position. Via the BPR tool, reflectivity measurements for a plurality of angles of incidence are obtained at the first xy position. One or more film thicknesses for the TSV structure are determined based on the reflectivity measurements. A z position can also be recorded and used to determine a height of such TSV structure, as well as one or more adjacent xy positions.
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公开(公告)号：US09645097B2
公开(公告)日：2017-05-09
申请号：US14741866
申请日：2015-06-17
Applicant: KLA-Tencor Corporation
Inventor： Lena Nicolaides , Ben-ming Benjamin Tsai , Prashant A. Aji , Michael Gasvoda , Stanley E. Stokowski , Guoheng Zhao , Youxian Wen , Mohan Mahadevan , Paul D. Horn , Wolfgang Vollrath , Isabella T. Lewis
CPC classification number: G01N21/9503 , G01N2201/06113 , G03F7/7085 , H01L22/12
Abstract: Disclosed are methods and apparatus for inspecting and processing semiconductor wafers. The system includes an edge detection system for receiving each wafer that is to undergo a photolithography process. The edge detection system comprises an illumination channel for directing one or more illumination beams towards a side, top, and bottom edge portion that are within a border region of the wafer. The edge detection system also includes a collection module for collecting and sensing output radiation that is scattered or reflected from the edge portion of the wafer and an analyzer module for locating defects in the edge portion and determining whether each wafer is within specification based on the sensed output radiation for such wafer. The photolithography system is configured for receiving from the edge detection system each wafer that has been found to be within specification. The edge detection system is coupled in-line with the photolithography system.
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9.发明申请APPARATUS AND METHODS FOR COMBINED BRIGHTFIELD, DARKFIELD, AND PHOTOTHERMAL INSPECTION 有权组合亮度，深度和光热检测的装置和方法公开(公告)号：US20150226676A1
公开(公告)日：2015-08-13
申请号：US14618586
申请日：2015-02-10
Applicant: KLA-Tencor Corporation
Inventor： Lena Nicolaides , Mohan Mahadevan , Alex Salnik , Scott A. Young
CPC classification number: G01N21/9505 , G01N21/1717 , G01N21/9501 , G01N2021/8825 , G01N2201/06113
Abstract: Disclosed are methods and apparatus for detecting defects or reviewing defects in a semiconductor sample. The system has a brightfield (BF) module for directing a BF illumination beam onto a sample and detecting an output beam reflected from the sample in response to the BF illumination beam. The system has a modulated optical reflectance (MOR) module for directing a pump and probe beam to the sample and detecting a MOR output beam from the probe spot in response to the pump beam and the probe beam. The system includes a processor for analyzing the BF output beam from a plurality of BF spots to detect defects on a surface or near the surface of the sample and analyzing the MOR output beam from a plurality of probe spots to detect defects that are below the surface of the sample.
Abstract translation: 公开了用于检测半导体样品中的缺陷或检查缺陷的方法和装置。 该系统具有用于将BF照明光束引导到样品上并且响应于BF照明光束检测从样品反射的输出光束的亮场（BF）模块。 该系统具有调制的光反射（MOR）模块，用于将泵和探针光束引导到样品，并响应于泵浦光束和探针光束检测来自探针光点的MOR输出光束。 该系统包括用于分析来自多个BF点的BF输出光束的处理器，以检测样品表面或表面附近的缺陷，并分析来自多个探针点的MOR输出光束以检测低于表面的缺陷 的样品。
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公开(公告)号：US10533954B2
公开(公告)日：2020-01-14
申请号：US15692863
申请日：2017-08-31
Applicant: KLA-Tencor Corporation
Inventor： Lena Nicolaides , Mohan Mahadevan , Alex Salnik , Scott A. Young
Abstract: Disclosed are methods and apparatus for detecting defects or reviewing defects in a semiconductor sample. The system has a brightfield (BF) module for directing a BF illumination beam onto a sample and detecting an output beam reflected from the sample in response to the BF illumination beam. The system has a modulated optical reflectance (MOR) module for directing a pump and probe beam to the sample and detecting a MOR output beam from the probe spot in response to the pump beam and the probe beam. The system includes a processor for analyzing the BF output beam from a plurality of BF spots to detect defects on a surface or near the surface of the sample and analyzing the MOR output beam from a plurality of probe spots to detect defects that are below the surface of the sample.
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