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公开(公告)号:US20210293999A1
公开(公告)日:2021-09-23
申请号:US16897024
申请日:2020-06-09
Applicant: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY
Inventor: Sang Wook HAN , Seung Woo JEON , Sung Wook MOON , Yong Su KIM , Hyang Tag LIM , Ho Joong JUNG , Young Wook CHO
Abstract: An inverted nanocone structure of the present disclosure includes a first surface, a second surface spaced apart from the first surface by a predetermined distance and having a greater area than the first surface, and a body having an inverted cone shape between the first surface and the second surface, wherein at least one activated point defect center is provided in the body.
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2.
公开(公告)号:US20230307214A1
公开(公告)日:2023-09-28
申请号:US18114295
申请日:2023-02-27
Applicant: Korea Institute of Science and Technology , KOREA ADVANCED INSTITUTE OF SCIENCE AND TECHNOLOGY
Inventor: Ho Joong JUNG , Sang Wook HAN , Hyung Jun HEO , Hansuek LEE , Min Kyo SEO , Hyeon HWANG
CPC classification number: H01J37/32825 , H01J37/32449 , G03F7/2026 , B08B3/08 , H01J2237/182 , H01J2237/3343 , H01J2237/3321 , H01J37/3266 , H01J2237/022
Abstract: The present invention relates to a method for etching lithium niobate, the method including a process of etching lithium niobate using a mask pattern as a physical dry etching method using Ar plasma produced in a chamber through Ar gas, wherein in the process of etching lithium niobate, a process pressure of the chamber is maintained at 1 mTorr to 20 mTorr, and a method for forming a lithium niobate pattern using the same.
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