公开(公告)号：US20240355663A1

公开(公告)日：2024-10-24

申请号：US18758212

申请日：2024-06-28

Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor： Yu-Chi LIN ,  Huai-Tei YANG ,  Lun-Kuang TAN ,  Wei-Jen LO ,  Chih-Teng LIAO

IPC: H01L21/683 ,  H01J37/32 ,  H01L21/3065

CPC classification number: H01L21/6833 ,  H01J37/32082 ,  H01J37/32743 ,  H01L21/3065 ,  H01J2237/0225 ,  H01J2237/182

Abstract: A method for cleaning debris and contamination from an etching apparatus is provided. The etching apparatus includes a process chamber, a source of radio frequency power, an electrostatic chuck within the process chamber, a chuck electrode, and a source of DC power connected to the chuck electrode. The method of cleaning includes placing a substrate on a surface of the electrostatic chuck, applying a plasma to the substrate, thereby creating a positively charged surface on the surface of the substrate, applying a negative voltage or a radio frequency pulse to the electrode chuck, thereby making debris particles and/or contaminants from the surface of the electrostatic chuck negatively charged and causing them to attach to the positively charged surface of the substrate, and removing the substrate from the etching apparatus thereby removing the debris particles and/or contaminants from the etching apparatus.

公开(公告)号：US12080582B2

公开(公告)日：2024-09-03

申请号：US17572351

申请日：2022-01-10

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

Inventor： Yu-Chi Lin ,  Huai-Tei Yang ,  Lun-Kuang Tan ,  Wei-Jen Lo ,  Chih-Teng Liao

IPC: H01L21/68 ,  H01J37/32 ,  H01L21/3065 ,  H01L21/683

CPC classification number: H01L21/6833 ,  H01J37/32082 ,  H01J37/32743 ,  H01L21/3065 ,  H01J2237/0225 ,  H01J2237/182

Abstract: A method for cleaning debris and contamination from an etching apparatus is provided. The etching apparatus includes a process chamber, a source of radio frequency power, an electrostatic chuck within the process chamber, a chuck electrode, and a source of DC power connected to the chuck electrode. The method of cleaning includes placing a substrate on a surface of the electrostatic chuck, applying a plasma to the substrate, thereby creating a positively charged surface on the surface of the substrate, applying a negative voltage or a radio frequency pulse to the electrode chuck, thereby making debris particles and/or contaminants from the surface of the electrostatic chuck negatively charged and causing them to attach to the positively charged surface of the substrate, and removing the substrate from the etching apparatus thereby removing the debris particles and/or contaminants from the etching apparatus.

公开(公告)号：US20240047194A1

公开(公告)日：2024-02-08

申请号：US18264539

申请日：2022-01-25

Applicant: Tokyo Electron Limited

Inventor： Kenichi KOTE ,  Takafumi NOGAMI ,  Kazui KOBAYASHI

IPC: H01L21/02 ,  H01J37/32 ,  C23C16/46 ,  C23C16/511 ,  C23C16/34 ,  C23C16/40 ,  C23C16/455

CPC classification number: H01L21/02274 ,  H01L21/0217 ,  H01L21/02164 ,  H01J37/32724 ,  H01J37/32816 ,  H01J37/32449 ,  C23C16/46 ,  C23C16/511 ,  C23C16/345 ,  C23C16/402 ,  C23C16/45557 ,  H01J2237/332 ,  H01J37/32192 ,  H01J2237/182

Abstract: The present disclosure provides a substrate processing method including: a preparation process of placing a target substrate on a stage within a processing container; a first heating process of supplying a first gas into the processing container and heating the target substrate with a heater; a second heating process of stopping the supply of the first gas, supplying a second gas different from the first gas, and heating the target substrate with the heater; and a processing process of processing the target substrate by supplying the second gas and a third gas.

公开(公告)号：US20230307214A1

公开(公告)日：2023-09-28

申请号：US18114295

申请日：2023-02-27

Applicant: Korea Institute of Science and Technology ,  KOREA ADVANCED INSTITUTE OF SCIENCE AND TECHNOLOGY

Inventor： Ho Joong JUNG ,  Sang Wook HAN ,  Hyung Jun HEO ,  Hansuek LEE ,  Min Kyo SEO ,  Hyeon HWANG

IPC: H01J37/32 ,  G03F7/20 ,  B08B3/08

CPC classification number: H01J37/32825 ,  H01J37/32449 ,  G03F7/2026 ,  B08B3/08 ,  H01J2237/182 ,  H01J2237/3343 ,  H01J2237/3321 ,  H01J37/3266 ,  H01J2237/022

Abstract: The present invention relates to a method for etching lithium niobate, the method including a process of etching lithium niobate using a mask pattern as a physical dry etching method using Ar plasma produced in a chamber through Ar gas, wherein in the process of etching lithium niobate, a process pressure of the chamber is maintained at 1 mTorr to 20 mTorr, and a method for forming a lithium niobate pattern using the same.

公开(公告)号：US20230178331A1

公开(公告)日：2023-06-08

申请号：US17911711

申请日：2020-03-26

Applicant: Hitachi High-Tech Corporation

Inventor： Mai YOSHIHARA ,  Wei Chean TAN

IPC: H01J37/22 ,  H01J37/28 ,  H01J37/18

CPC classification number: H01J37/222 ,  H01J37/28 ,  H01J37/18 ,  H01J2237/182

Abstract: Improved is the reliability of sample analysis performed using a charged particle beam apparatus.
The charged particle beam apparatus includes region setting means for setting an irradiation region for irradiating a sample with an electron beam and an irradiation prohibited region for prohibiting the irradiation of the sample with the electron beam using a low-magnification image of the sample captured under low vacuum. In addition, the charged particle beam apparatus includes captured image acquisition means for selectively irradiating the irradiation region with the electron beam with the inside of a sample chamber under high-vacuum and acquiring a high-vacuum SEM image of the irradiation region based on the secondary or backscattered electrons emitted from the irradiation region.

公开(公告)号：US20170271125A1

公开(公告)日：2017-09-21

申请号：US15617157

申请日：2017-06-08

Applicant: Oxford Instruments Nanotechnology Tools Limited

Inventor： Peter J. STATHAM

IPC: H01J37/244 ,  H01J37/28

CPC classification number: H01J37/244 ,  H01J37/28 ,  H01J2237/164 ,  H01J2237/182 ,  H01J2237/188 ,  H01J2237/24415 ,  H01J2237/2445 ,  H01J2237/2608

Abstract: An x-ray analysis apparatus comprises an electron beam assembly for generating a focused electron beam within a first gas pressure environment. A sample assembly is used for retaining a sample within a second gas pressure environment such that the sample receives the electron beam from the electron beam assembly and such that the gas pressure in the second gas pressure environment is greater than the gas pressure within the first gas pressure environment. An x-ray detector is positioned so as to have at least one x-ray sensor element within the first gas pressure environment. The sensor element is mounted to a part of the electron beam assembly which is proximal to the sample assembly and further arranged in use to receive x-rays generated by the interaction between the electron beam and the sample.

公开(公告)号：US20170207075A1

公开(公告)日：2017-07-20

申请号：US15001667

申请日：2016-01-20

Applicant: Thermo Finnigan LLC

Inventor： Scott T. QUARMBY ,  Edward B. McCAULEY ,  Joshua T. MAZE

IPC: H01J49/24 ,  H01J49/16

CPC classification number: H01J49/24 ,  H01J49/0013 ,  H01J49/0404 ,  H01J49/165 ,  H01J2237/182

Abstract: A mass spectrometer system can include an ion source, a vacuum chamber; a mass analyzer within the vacuum chamber, a transfer tube between the ion source and the vacuum chamber, a transfer tube heater, and a vacuum pump. The mass spectrometer system can be configured to reduce the pump speed of the vacuum pump in response to receiving a transfer tube swap instruction; lower the temperature of the transfer tube to below a first threshold; operating the vacuum pump at the reduced pump speed while the transfer tube is replaced with a second transfer tube; heating the second transfer tube to a temperature above a pump down temperature; and increasing the pump speed of the vacuum pump after the temperature of the second transfer tube exceeds a second threshold.

公开(公告)号：US20160240345A1

公开(公告)日：2016-08-18

申请号：US15041008

申请日：2016-02-10

Applicant: ICT Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH

Inventor： Jürgen Frosien

IPC: H01J37/077 ,  H01J37/18 ,  H01J37/26

CPC classification number: H01J37/065 ,  H01J2237/057 ,  H01J2237/164 ,  H01J2237/182

Abstract: The present disclosure provides a charged particle source arrangement for a charged particle beam device. The charged particle source arrangement includes: a first vacuum region and a second vacuum region; a charged particle source in the first vacuum region wherein the charged particle source is configured to generate a primary charged particle beam; and a membrane configured to provide a gas barrier between the first vacuum region and the second vacuum region, and wherein the membrane is configured to let at least a portion of the primary charged particle beam pass through the membrane, wherein a first vacuum generation device is connectable to the first vacuum region and a second vacuum generation device is connectable to the second vacuum region.

Abstract translation: 本公开提供了一种用于带电粒子束装置的带电粒子源装置。 带电粒子源装置包括：第一真空区域和第二真空区域; 在第一真空区域中的带电粒子源，其中带电粒子源被配置为产生初级带电粒子束; 以及膜，被配置为在所述第一真空区域和所述第二真空区域之间提供气体阻挡层，并且其中所述膜被配置为使所述初级带电粒子束的至少一部分通过所述膜，其中第一真空产生装置是 可连接到第一真空区域，第二真空产生装置可连接到第二真空区域。

公开(公告)号：US20160233051A1

公开(公告)日：2016-08-11

申请号：US15024773

申请日：2014-09-25

Applicant: OXFORD INSTRUMENTS NANOTECHNOLOGY TOOLS LIMITED

Inventor： Peter STATHAM

IPC: H01J37/244 ,  H01J37/28

CPC classification number: H01J37/244 ,  H01J37/28 ,  H01J2237/164 ,  H01J2237/182 ,  H01J2237/188 ,  H01J2237/24415 ,  H01J2237/2445 ,  H01J2237/2608

Abstract: An x-ray analysis apparatus comprises an electron beam assembly for generating a focused electron beam within a first gas pressure environment. A sample assembly is used for retaining a sample within a second gas pressure environment such that the sample receives the electron beam from the electron beam assembly and such that the gas pressure in the second gas pressure environment is greater than the gas pressure within the first gas pressure environment. An x-ray detector is positioned so as to have at least one x-ray sensor element within the first gas pressure environment. The sensor element is mounted to a part of the electron beam assembly which is proximal to the sample assembly and further arranged in use to receive x-rays generated by the interaction between the electron beam and the sample.

Abstract translation: X射线分析装置包括用于在第一气体压力环境内产生聚焦电子束的电子束组件。 样品组件用于将样品保持在第二气体压力环境内，使得样品接收来自电子束组件的电子束，并且使得第二气体压力环境中的气体压力大于第一气体内的气体压力 压力环境。 x射线检测器定位成在第一气体压力环境内具有至少一个x射线传感器元件。 传感器元件安装到电子束组件的靠近样品组件的一部分，并且在使用中进一步布置以接收由电子束和样品之间的相互作用产生的x射线。

公开(公告)号：US20160203940A1

公开(公告)日：2016-07-14

申请号：US14911960

申请日：2014-09-18

Applicant: HITACHI HIGH-TECHNOLOGIES CORPORATION

Inventor： Takashi MIZUO ,  Yusuke TAMBA ,  Haruhiko HATANO ,  Kazutaka NIMURA

IPC: H01J37/18 ,  F25B45/00 ,  F25B19/00

CPC classification number: H01J37/18 ,  F25B19/005 ,  F25B45/00 ,  H01J2237/002 ,  H01J2237/022 ,  H01J2237/028 ,  H01J2237/182 ,  H01J2237/2001 ,  H01J2237/2002

Abstract: In conventional structures, a space between a dual cooling tank is vacuum insulated, and a cooling part is cooled via a highly thermally conductive material connected to an inner container. Such structures are affected by heat infiltrating into the highly thermally conductive material and the cooling part. For instance, in cases when liquid nitrogen is used as a coolant, it takes approximately 30 minutes for the temperature to reach −120° C. Even in cases when a significant amount of time has been spent, the temperature only reaches approximately −150° C., and thus falls significantly short of the temperature of liquid nitrogen, namely −196° C. Accordingly, an anti-contamination trap and a vacuum application device according to the present invention are provided with a structure in which a device-internal cooling part in the vacuum application device is cooled, and are characterized by being provided with: a cooling tank filled with a coolant for cooling a cooling part; and a cooling pipe extending from the cooling tank to the vicinity of the cooling part. The anti-contamination trap and the vacuum application device are further characterized in that: the coolant is supplied to an end of the cooling part; and a tube for releasing air bubbles inside the cooling pipe is inserted so as to extend to the cooling part.

Abstract translation: 在常规结构中，双重冷却罐之间的空间是真空绝缘的，并且通过连接到内部容器的高导热性材料冷却冷却部件。 这种结构受到热量渗入高导热材料和冷却部分的影响。 例如，在使用液氮作为冷却剂的情况下，温度达到-120℃需要约30分钟。即使花费了大量时间的情况下，温度仅达到约-150° 因此，显着低于液氮的温度即-196℃。因此，根据本发明的抗污染捕集器和真空施加装置设置有其中装置内部冷却 真空应用装置中的一部分被冷却，其特征在于设有：填充有用于冷却冷却部件的冷却剂的冷却罐; 以及从冷却槽延伸到冷却部附近的冷却管。 抗污染捕集器和真空施加装置的特征还在于：将冷却剂供给到冷却部件的一端; 并且用于释放冷却管内的气泡的管被插入以延伸到冷却部。