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公开(公告)号:US11723273B2
公开(公告)日:2023-08-08
申请号:US17551072
申请日:2021-12-14
Applicant: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY , Pusan National University Industry-University Cooperation Foundation
Inventor: Hyejin Ryu , Choongyu Hwang , Kyoo Kim
IPC: C30B9/04 , C30B29/52 , H10N10/01 , H10N10/852
CPC classification number: H10N10/01 , C30B9/04 , C30B29/52 , H10N10/852
Abstract: Provided is a method of preparing an SnSe thermoelectric material including (a) heating a mixture including Sn2+ and Se2−, (b) cooling the mixture at a cooling rate greater than 0 and equal to or less than 3 K/h, and forming single crystal Sn1-xSe (where 0
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公开(公告)号:US11785859B2
公开(公告)日:2023-10-10
申请号:US17163829
申请日:2021-02-01
Applicant: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY
Inventor: Jun Woo Choi , Sang Yeop Lee , Hyejin Ryu , Chaun Jang
Abstract: Proposed is a magnetoresistance device, including a first layered magnetic material layer in which a magnetization direction is controlled depending on the voltage, a second layered magnetic material layer in which a magnetization direction is fixed in a predetermined direction, and a layered insulator layer interposed between the first and second layered magnetic material layers.
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公开(公告)号:US20220123204A1
公开(公告)日:2022-04-21
申请号:US17163829
申请日:2021-02-01
Applicant: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY
Inventor: Jun Woo Choi , Sang Yeop Lee , Hyejin Ryu , Chaun Jang
Abstract: Proposed is a magnetoresistance device, including a first layered magnetic material layer in which a magnetization direction is controlled depending on the voltage, a second layered magnetic material layer in which a magnetization direction is fixed in a predetermined direction, and a layered insulator layer interposed between the first and second layered magnetic material layers.
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