公开(公告)号：US20170271537A1

公开(公告)日：2017-09-21

申请号：US15444806

申请日：2017-02-28

Applicant: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY

Inventor： Suyoun LEE ,  Byung-ki CHEONG ,  Seong Keun KIM ,  Do Kyung HWANG ,  Hyunsu JU ,  Young Tack LEE

IPC: H01L31/032 ,  H01L31/109 ,  H01L31/112 ,  H01L27/146

CPC classification number: H01L31/0324 ,  H01L27/14645 ,  H01L27/14647 ,  H01L31/032 ,  H01L31/109 ,  H01L31/1129

Abstract: Embodiments are directed to a chalcogenide material-based filterless color image sensor, which includes a substrate, a first chalcogenide material layer formed on a substrate for a first color, a second chalcogenide material layer formed on the first chalcogenide material layer for a second color, and a third chalcogenide material layer formed on the second chalcogenide material layer for a third color.

公开(公告)号：US20190312654A1

公开(公告)日：2019-10-10

申请号：US16376672

申请日：2019-04-05

Applicant: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY

Inventor： Jaehoon HAN ,  Sanghyeon KIM ,  Hyunsu JU ,  Jin-Dong SONG

IPC: H04B10/80 ,  H04B10/66 ,  H04B10/50

Abstract: A method for optical interconnection between semiconductor chips according to an embodiment include converting an electrical signal to an optical signal, transmitting the optical signal to a second substrate disposed above or below a first substrate using an optical transmitter provided on the first substrate, receiving the optical signal using an optical detector provided on the second substrate, and converting the received optical signal to an electrical signal. Accordingly, using a mid-infrared wavelength range of light that is transparent to semiconductor materials such as silicon and next-generation high-mobility materials, it is possible to enable interconnection between stacked semiconductor chips without using metal wiring. Using optical interconnection, it is possible to significantly reduce the bandwidth and power consumption, and overcome the limitations of TSV technology, and it is possible to extend the photonics technology and platform established in the existing Si Photonics, thereby reducing the cost required for design.

公开(公告)号：US20210238737A1

公开(公告)日：2021-08-05

申请号：US17155992

申请日：2021-01-22

Applicant: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY

Inventor： Jae Kap LEE ,  Hyunsu JU

IPC: C23C16/27

Abstract: Provided are a method of manufacturing a diamond-graphene hybrid heat spreader-thermal interface material assembled thermal management material including: (a) preparing a planar diamond base material; and (b) converting a predetermined thickness of at least a partial area of one side or both sides of the diamond base material into vertical graphene, wherein the diamond base material serves as a heat spreader, and a graphene layer formed on the diamond base material serves as a thermal interface material (TIM) or a heat sink, and a method of modulating the diamond-graphene hybrid thermal management material including modulating the thermal management material by attaching a heterogenous member to the surface of the diamond-graphene hybrid thermal management material and pressurizing the attached structure.

公开(公告)号：US20190267453A1

公开(公告)日：2019-08-29

申请号：US16283411

申请日：2019-02-22

Applicant: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY

Inventor： Hyunsu JU ,  Jin-Dong SONG ,  Joonyeon CHANG ,  Gyosub LEE

IPC: H01L29/205 ,  H01L29/737 ,  H01L29/66

Abstract: Provided is a Group III-V compound semiconductor device. The device includes a substrate, a compound semiconductor layer provided on the substrate; and a buffer layer interposed between the compound semiconductor layer and the substrate. The compound semiconductor layer includes a first semiconductor area having a first conductivity type and a second semiconductor area having a second conductivity type. The buffer layer includes a high electron density area. In the buffer layer, an electron density of the high electron density area is higher than an electron density outside the high electron density area.