公开(公告)号：US11339499B2

公开(公告)日：2022-05-24

申请号：US16587066

申请日：2019-09-30

Applicant: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY

Inventor： Soo Min Kim ,  Joo Song Lee ,  Hayoung Ko ,  Hye Young Koo

IPC: C30B25/18 ,  H01L21/02 ,  C30B29/40 ,  H01L29/20 ,  C30B29/46 ,  C30B29/68

Abstract: Disclosed herein is a method for 2D epitaxial growth comprising: forming a single crystalline h-BN template; forming a plurality of nuclei by depositing a heterogeneous precursor on the h-BN template; and forming a heterogeneous structure layer by growing the plurality of deposited nuclei with a van der Waals epitaxial growth, wherein the heterogeneous structure layer is a single crystal.

公开(公告)号：US10584032B2

公开(公告)日：2020-03-10

申请号：US15655869

申请日：2017-07-20

Applicant: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY

Inventor： Myung Jong Kim ,  Hyun Jin Cho ,  Seokhoon Ahn ,  Se Gyu Jang ,  Soo Min Kim ,  Dong Ick Son ,  Jun Hee Kim ,  Tae Hoon Seo

IPC: C01B21/064 ,  B01J19/12 ,  B01J23/745 ,  B01J37/34

Abstract: Provided is a method for preparing boron nitride nanotubes, the method including: injecting a boron-metal catalyst composite into a reaction chamber; injecting a nitrogen precursor into the reaction chamber; producing a decomposition product of the boron-metal catalyst composite in a gas state by irradiating the boron-metal catalyst composite with a carbon dioxide laser or a free electron laser; and forming boron nitride nanotubes by reacting the decomposition product of the boron-metal catalyst composite in the gas state with the nitrogen precursor.