公开(公告)号：US08050133B2

公开(公告)日：2011-11-01

申请号：US12327541

申请日：2008-12-03

Applicant: Tae-Sik Yun ,  Kang-Seol Lee

Inventor： Tae-Sik Yun ,  Kang-Seol Lee

IPC: G11C8/00

CPC classification number: G11C8/08 ,  G11C8/12 ,  G11C8/14 ,  G11C8/18

Abstract: A word line driver, a method for driving the word line driver, and a semiconductor memory device having the word line driver. The word line driver receives a main word line driving signal and a sub word line driving signal, to drive a word line with a word line driving signal, wherein the word line is driven concurrently with an activation of the main word line driving signal. The word line driver can reduce the unnecessary current consumption.

Abstract translation: 字线驱动器，用于驱动字线驱动器的方法，以及具有字线驱动器的半导体存储器件。 字线驱动器接收主字线驱动信号和副字线驱动信号，用字线驱动信号驱动字线，其中字线与主字线驱动信号的激活同时被驱动。 字线驱动器可以减少不必要的电流消耗。

公开(公告)号：US07978003B2

公开(公告)日：2011-07-12

申请号：US12630657

申请日：2009-12-03

Applicant: Kang-Seol Lee ,  Jae-Hyuk Im

Inventor： Kang-Seol Lee ,  Jae-Hyuk Im

IPC: G05F1/10 ,  G05F3/02

CPC classification number: G11C5/14

Abstract: There is an internal voltage generating circuit for providing a stable high voltage by making a response time short. The internal voltage generating circuit includes a charge pump unit for generate a high voltage being higher than an external voltage in response to pumping control signals and a supply driving control signal; a pumping control signal generating unit for outputting the pumping control signals to the charge pump unit based on a driving signal; and a supply driving control unit for receiving the driving signal to generate the supply driving control signal to the charge pump unit.

Abstract translation: 存在内部电压产生电路，用于通过使响应时间短而提供稳定的高电压。 内部电压产生电路包括电荷泵单元，用于响应于泵送控制信号和电源驱动控制信号而产生高于外部电压的高电压; 泵送控制信号产生单元，用于基于驱动信号将泵送控制信号输出到电荷泵单元; 以及电源驱动控制单元，用于接收驱动信号以向电荷泵单元产生电源驱动控制信号。

公开(公告)号：US20110158023A1

公开(公告)日：2011-06-30

申请号：US12829987

申请日：2010-07-02

Applicant: Tae-Sik Yun ,  Kang-Seol Lee

Inventor： Tae-Sik Yun ,  Kang-Seol Lee

IPC: G11C7/06

CPC classification number: G11C11/4091 ,  G11C7/08 ,  G11C7/1048 ,  G11C11/4087 ,  G11C2207/005

Abstract: A semiconductor memory device includes a cell block including a first bit line, a sense amplifier unit including a second bit line and configured to amplify a data signal applied to the second bit line, a connection unit configured to selectively connect the first bit line and the second bit line, a connection control unit configured to receive a control signal for driving the sense amplifier unit and a selection signal for selecting the cell block and generate a connection signal for activating the connection unit at a first time, and a sense amplifier driving control unit configured to receive the control signal and generate a sense amplifier driving signal for driving the sense amplifier unit at a second time after the first time.

Abstract translation: 半导体存储器件包括：包括第一位线的单元块，包括第二位线的读出放大器单元，用于放大施加到第二位线的数据信号;连接单元，被配置为选择性地将第一位线和 第二位线，连接控制单元，被配置为接收用于驱动读出放大器单元的控制信号和用于选择单元块的选择信号，并且在第一时间产生用于激活连接单元的连接信号，以及读出放大器驱动控制 被配置为接收控制信号并且在第一次之后的第二时间产生用于驱动读出放大器单元的读出放大器驱动信号。

公开(公告)号：US07936614B2

公开(公告)日：2011-05-03

申请号：US12336164

申请日：2008-12-16

Applicant: Ki-Ho Kim ,  Kang-Seol Lee

Inventor： Ki-Ho Kim ,  Kang-Seol Lee

IPC: G11C7/06

CPC classification number: G11C7/1078 ,  G11C5/143 ,  G11C7/1051 ,  G11C7/1057 ,  G11C7/1066 ,  G11C7/1084 ,  G11C11/4074 ,  G11C11/4093

Abstract: A semiconductor memory device includes a data input driver and a data output driver for receiving an external power supply voltage, and for inputting and outputting data, respectively; and a voltage detector for detecting the external power supply voltage to generate a detection signal, wherein a drive current of each of the data input driver and the data output driver is controlled by the detection signal.

Abstract translation: 半导体存储器件包括数据输入驱动器和用于接收外部电源电压的数据输出驱动器，并分别用于输入和输出数据; 以及电压检测器，用于检测外部电源电压以产生检测信号，其中数据输入驱动器和数据输出驱动器中的每一个的驱动电流由检测信号控制。

公开(公告)号：US20090323455A1

公开(公告)日：2009-12-31

申请号：US12327541

申请日：2008-12-03

Applicant: Tae-Sik YUN ,  Kang-Seol Lee

Inventor： Tae-Sik YUN ,  Kang-Seol Lee

IPC: G11C8/08

CPC classification number: G11C8/08 ,  G11C8/12 ,  G11C8/14 ,  G11C8/18

Abstract: A word line driver, a method for driving the word line driver, and a semiconductor memory device having the word line driver. The word line driver receives a main word line driving signal and a sub word line driving signal, to drive a word line with a word line driving signal, wherein the word line is driven concurrently with an activation of the main word line driving signal. The word line driver can reduce the unnecessary current consumption.

Abstract translation: 字线驱动器，用于驱动字线驱动器的方法，以及具有字线驱动器的半导体存储器件。 字线驱动器接收主字线驱动信号和副字线驱动信号，用字线驱动信号驱动字线，其中字线与主字线驱动信号的激活同时被驱动。 字线驱动器可以减少不必要的电流消耗。

公开(公告)号：US20080186080A1

公开(公告)日：2008-08-07

申请号：US12000232

申请日：2007-12-11

Applicant: Kang-Seol Lee

Inventor： Kang-Seol Lee

IPC: G05F3/02 ,  G05F3/16

CPC classification number: G11C8/08 ,  G11C5/145 ,  G11C7/04

Abstract: A negative voltage supply device includes a negative voltage detector and a negative voltage pumping unit. The negative voltage pumping unit pumps a negative voltage in response to a detection signal. The negative voltage detector detects a level of a negative voltage by using a first element and a second element, which are different in the degree of change in their respective resistance values depending on the temperature, and outputs the detection signal. The detection signal informs the negative voltage pumping unit that pumping of the negative voltage is no longer needed.

Abstract translation: 负电压供给装置包括负电压检测器和负电压抽吸单元。 负电压抽吸单元响应于检测信号泵送负电压。 负电压检测器通过使用根据温度的各自电阻值的变化程度不同的第一元件和第二元件来检测负电压的电平，并输出检测信号。 检测信号通知负电压抽运单元不再需要泵送负电压。

公开(公告)号：US20070070720A1

公开(公告)日：2007-03-29

申请号：US11478192

申请日：2006-06-30

Applicant: Kang-Seol Lee ,  Jae-Jin Lee

Inventor： Kang-Seol Lee ,  Jae-Jin Lee

IPC: G11C5/14

CPC classification number: G11C5/14

Abstract: A voltage generator for use in a semiconductor memory device includes an output voltage controller for generating a bias voltage using a reference voltage of which a voltage level is half of a core voltage level. Pull-up/pull-down driving signals are output by generating a voltage which is higher or lower than the reference voltage by a threshold voltage. An output driver generates a bit line precharge voltage in response to the pull-up driving signal or the pull-down driving signal. Drive controllers interrupt off-leakage current of the output driver. One drive controller is disposed between the output driver and a core voltage terminal and another drive controller is between the output driver and a ground voltage terminal.

Abstract translation: 用于半导体存储器件的电压发生器包括：输出电压控制器，用于使用电压电平为核心电压电平的一半的参考电压产生偏置电压。 通过产生高于或低于参考电压阈值电压的电压来输出上拉/下拉驱动信号。 输出驱动器响应于上拉驱动信号或下拉驱动信号产生位线预充电电压。 驱动控制器会中断输出驱动器的漏电流。 一个驱动控制器设置在输出驱动器和核心电压端子之间，另一个驱动控制器位于输出驱动器和地电压端子之间。

公开(公告)号：US20060244514A1

公开(公告)日：2006-11-02

申请号：US11302374

申请日：2005-12-14

Applicant: Kang-Seol Lee ,  Jae-Hyuk Im

Inventor： Kang-Seol Lee ,  Jae-Hyuk Im

IPC: G05F1/10

CPC classification number: G11C5/145 ,  G11C5/147 ,  G11C7/04 ,  G11C11/4074

Abstract: An internal voltage generator for stably generating an internal voltage includes: a latch unit for generating a first and a second driving signals which have exact 180-degree phase difference based on a periodic signal, a first pump block for generating the internal voltage in response to the first driving signal, and a second pump block for generating the internal voltage in response to the second driving signal, wherein a level of the internal voltage is higher or equal to triple power supply voltage level.

Abstract translation: 用于稳定地产生内部电压的内部电压发生器包括：用于产生基于周期性信号具有精确的180度相位差的第一和第二驱动信号的锁存单元，用于响应于 第一驱动信号和用于响应于第二驱动信号产生内部电压的第二泵块，其中内部电压的电平高于或等于三重电源电压电平。

公开(公告)号：US20060232302A1

公开(公告)日：2006-10-19

申请号：US11321115

申请日：2005-12-28

Applicant: Kang-Seol Lee ,  Young-Jun Ku

Inventor： Kang-Seol Lee ,  Young-Jun Ku

IPC: G01N30/86

CPC classification number: G11C5/147 ,  G05F1/465

Abstract: An internal voltage generator according to the present invention stably supplies an internal voltage regardless a level of power voltage input from a source external to a semiconductor memory device. The present invention includes a dead zone controller to generate a reference voltage, a high reference voltage and a low reference voltage based on an inputted power voltage; and an internal power generator to generate an internal power based on the reference voltage by comparing the internal power with the high reference voltage and the low reference voltage.

Abstract translation: 根据本发明的内部电压发生器，与从半导体存储器件外部的源极输入的电源电压的电平无关地稳定地提供内部电压。 本发明包括基于输入的电源电压产生参考电压，高参考电压和低参考电压的死区控制器; 以及内部功率发生器，通过将内部功率与高参考电压和低参考电压进行比较，基于参考电压产生内部功率。

公开(公告)号：US20050105378A1

公开(公告)日：2005-05-19

申请号：US10882454

申请日：2004-06-30

Applicant: Kang-Seol Lee

Inventor： Kang-Seol Lee

IPC: G11C11/407 ,  G11C5/14 ,  G11C8/00

CPC classification number: G11C5/14

Abstract: A delay locked loop (DLL) power supply circuit for use in a semiconductor memory device, including: a DLL power supplier for supplying a DLL power supply voltage to a DLL in response to a reference voltage and a clock enable exit pulse signal; and a pulse signal generator for generating the clock enable exit pulse signal in response to a clock enable signal.

Abstract translation: 一种用于半导体存储器件的延迟锁定环路（DLL）电源电路，包括：DLL电源，用于响应于参考电压和时钟使能输出脉冲信号向DLL提供DLL电源电压; 以及脉冲信号发生器，用于响应于时钟使能信号产生时钟使能输出脉冲信号。