公开(公告)号：US07384834B2

公开(公告)日：2008-06-10

申请号：US11411892

申请日：2006-04-27

申请人： Katsuhiro Mitsuda ,  Mitsuharu Honda ,  Akira Iizuka

发明人： Katsuhiro Mitsuda ,  Mitsuharu Honda ,  Akira Iizuka

IPC分类号： H01L21/336 ,  H01L21/8234

CPC分类号： H01L21/823835 ,  H01L21/02063 ,  H01L21/26506 ,  H01L21/26513 ,  H01L21/324 ,  H01L21/823814 ,  H01L29/665 ,  H01L29/6659 ,  H01L29/7842

摘要： A semiconductor device and a method of manufacturing such a semiconductor device having a field effect transistor with improved current driving performance (e.g., an increase of drain current) of the field effect transistor comprising the steps of ion implanting an element from the main surface to the inside of a silicon layer as a semiconductor substrate to a level shallower than the implantation depth of the impurities in the step of forming the semiconductor region before the step of ion implanting impurities from the main surface to the inside of the silicon layer as a semiconductor substrate to form the semiconductor region being aligned with the gate electrode.

摘要翻译： 一种半导体器件和制造这种具有场效应晶体管的半导体器件的方法，所述场效应晶体管具有提高的场效应晶体管的电流驱动性能（例如，增加漏极电流），包括以下步骤：将元件从主表面离子注入到 在作为半导体衬底的从硅表面到内部的离子注入杂质的步骤之前形成半导体区域的步骤中，将作为半导体衬底的硅层的内部设置为比杂质的注入深度浅的水平 以形成与栅电极对准的半导体区域。

公开(公告)号：US20060199323A1

公开(公告)日：2006-09-07

申请号：US11411892

申请日：2006-04-27

申请人： Katsuhiro Mitsuda ,  Mitsuharu Honda ,  Akira Iizuka

发明人： Katsuhiro Mitsuda ,  Mitsuharu Honda ,  Akira Iizuka

IPC分类号： H01L21/8234

CPC分类号： H01L21/823835 ,  H01L21/02063 ,  H01L21/26506 ,  H01L21/26513 ,  H01L21/324 ,  H01L21/823814 ,  H01L29/665 ,  H01L29/6659 ,  H01L29/7842

摘要： A semiconductor device and a method of manufacturing such a semiconductor device having a field effect transistor with improved current driving performance (e.g., an increase of drain current) of the field effect transistor comprising the steps of ion implanting an element from the main surface to the inside of a silicon layer as a semiconductor substrate to a level shallower than the implantation depth of the impurities in the step of forming the semiconductor region before the step of ion implanting impurities from the main surface to the inside of the silicon layer as a semiconductor substrate to form the semiconductor region being aligned with the gate electrode.

摘要翻译： 一种半导体器件和制造这种具有场效应晶体管的半导体器件的方法，所述场效应晶体管具有提高的场效应晶体管的电流驱动性能（例如，增加漏极电流），包括以下步骤：将元件从主表面离子注入到 在作为半导体衬底的从硅表面到内部的离子注入杂质的步骤之前形成半导体区域的步骤中，将作为半导体衬底的硅层的内部设置为比杂质的注入深度浅的水平 以形成与栅电极对准的半导体区域。

公开(公告)号：US07087474B2

公开(公告)日：2006-08-08

申请号：US10739319

申请日：2003-12-19

申请人： Katsuhiro Mitsuda ,  Mitsuharu Honda ,  Akira Iizuka

发明人： Katsuhiro Mitsuda ,  Mitsuharu Honda ,  Akira Iizuka

IPC分类号： H01L21/336 ,  H01L21/8234

CPC分类号： H01L21/823835 ,  H01L21/02063 ,  H01L21/26506 ,  H01L21/26513 ,  H01L21/324 ,  H01L21/823814 ,  H01L29/665 ,  H01L29/6659 ,  H01L29/7842

摘要： A method of manufacturing a semiconductor device having a field effect transistor with improved current driving performance (increase of drain current) includes the steps of ion implanting a group IV element from the main surface to the inside of a silicon layer serving as a semiconductor substrate to a level shallower than the implantation depth of the impurities in the step of forming the semiconductor region before the step of ion implanting impurities from the main surface to the inside of the silicon layer serving as a semiconductor substrate so as to form a semiconductor region which is aligned with the gate electrode.

摘要翻译： 制造具有提高的电流驱动性能（漏电流的增加）的场效应晶体管的半导体器件的方法包括以下步骤：将IV族元件从用作半导体衬底的硅层的主表面到内部离子注入到 在从作为半导体衬底的硅层的主表面到内部的离子注入杂质的步骤之前形成半导体区域的步骤中的杂质的注入深度的水平浅，以形成半导体区域 与栅电极对准。

公开(公告)号：US20080242013A1

公开(公告)日：2008-10-02

申请号：US12113467

申请日：2008-05-01

申请人： Katsuhiro Mitsuda ,  Mitsuharu Honda ,  Akira Ilzuka

发明人： Katsuhiro Mitsuda ,  Mitsuharu Honda ,  Akira Ilzuka

IPC分类号： H01L21/336

CPC分类号： H01L21/26506 ,  H01L21/02063 ,  H01L21/26513 ,  H01L21/2658 ,  H01L21/324 ,  H01L21/823814 ,  H01L21/823835 ,  H01L29/665 ,  H01L29/6659 ,  H01L29/7842

摘要： A semiconductor device and a method of manufacturing such a semiconductor device having a field effect transistor with improved current driving performance (e.g., an increase of drain current) of the field effect transistor comprising the steps of ion implanting an element from the main surface to the inside of a silicon layer as a semiconductor substrate to a level shallower than the implantation depth of the impurities in the step of forming the semiconductor region before the step of ion implanting impurities from the main surface to the inside of the silicon layer as a semiconductor substrate to form the semiconductor region being aligned with the gate electrode.

摘要翻译： 一种半导体器件和制造这种具有场效应晶体管的半导体器件的方法，所述场效应晶体管具有提高的场效应晶体管的电流驱动性能（例如，增加漏极电流），包括以下步骤：将元件从主表面离子注入到 在作为半导体衬底的从硅表面到内部的离子注入杂质的步骤之前形成半导体区域的步骤中，将作为半导体衬底的硅层的内部设置为比杂质的注入深度浅的水平 以形成与栅电极对准的半导体区域。

公开(公告)号：US5134301A

公开(公告)日：1992-07-28

申请号：US547018

申请日：1990-07-02

申请人： Tadashi Kamata ,  Jun Sugiura ,  Mitsuharu Honda

发明人： Tadashi Kamata ,  Jun Sugiura ,  Mitsuharu Honda

IPC分类号： H01J27/26 ,  H01J37/02 ,  H01J37/30 ,  H01J37/317 ,  H01L21/265

CPC分类号： H01J37/3171 ,  H01J27/26 ,  H01J37/026 ,  H01J37/3007 ,  H01L21/265

摘要： An ion injecting apparatus and a process for fabricating a semiconductor integrated circuit device by using the ion implanting apparatus is provided. When a wafer, e.g., a Si wafer, is to be implanted with ions, an electrode or the like made of a highly pure Si material is used to achieve a high throughput and a high density implantation. This serves to prevent the occurrence of contamination due to sputtering of the electrode member along the beam passage in the ion implanting apparatus during the high density beam implantation.

公开(公告)号：US5244820A

公开(公告)日：1993-09-14

申请号：US921988

申请日：1992-08-03

申请人： Tadashi Kamata ,  Mitsuharu Honda ,  Jun Sugiura ,  Nobuo Owada ,  Hizuru Yamaguchi

发明人： Tadashi Kamata ,  Mitsuharu Honda ,  Jun Sugiura ,  Nobuo Owada ,  Hizuru Yamaguchi

IPC分类号： H01L21/265 ,  H01L21/8242

CPC分类号： H01L21/26593 ,  H01L21/265 ,  H01L21/26506 ,  H01L21/26513 ,  H01L21/2652 ,  H01J2237/2001 ,  H01J2237/31701 ,  H01L27/10894 ,  Y10S148/083

摘要： The present invention relates to an ion implantation process in a wafer process for a semiconductor integrated circuit device. Particularly, according to the present invention, a shallow junction can be formed by performing the implantation of ion while holding a wafer to be processed at a low temperature.

摘要翻译： 本发明涉及用于半导体集成电路器件的晶片工艺中的离子注入工艺。 特别地，根据本发明，可以通过在保持待处理的晶片在低温下进行离子的注入来形成浅结。