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    Semiconductor light-receiving module capable of converting light into current efficiently at light absorbing layer
    3.
    发明授权
    Semiconductor light-receiving module capable of converting light into current efficiently at light absorbing layer 失效
    能够在光吸收层有效地将光转换成电流的半导体光接收模块

    公开(公告)号：US07372123B2

    公开(公告)日：2008-05-13

    申请号：US11054747

    申请日：2005-02-09

    申请人： Kenji Kawano ,  Hiroaki Yoshidaya ,  Jun Hiraoka ,  Eiji Kawazura ,  Satoshi Matsumoto

    发明人： Kenji Kawano ,  Hiroaki Yoshidaya ,  Jun Hiraoka ,  Eiji Kawazura ,  Satoshi Matsumoto

    IPC分类号： H01L29/732

    CPC分类号： G02B6/12004 ,  G02B6/42 ,  G02B6/4295 ,  H01L31/02327

    摘要： A semiconductor light-receiving module includes a semiconductor light-receiving element and an incident light direction device. The semiconductor light-receiving element includes a substrate, at least a light absorbing layer and an upper cladding layer formed sequentially on the substrate, a light incident facet formed at least at one facet of the substrate and the light absorbing layer, and electrodes which output an electric signal generated by absorption of the light entering from the light incident facet in the light absorbing layer. The incident light direction device directs to irradiate the light obliquely to the light incident facet of the semiconductor light-receiving element, and to cause at least part of the light to irradiate the light absorbing layer at the light incident facet.

    摘要翻译： 半导体光接收模块包括半导体光接收元件和入射光方向装置。 半导体光接收元件包括基板，至少在基板上形成的光吸收层和上包层，至少在基板和光吸收层的一个面上形成的光入射面，以及输出的电极 通过吸收从光吸收层中的光入射小面入射的光产生的电信号。 入射光方向装置指向与半导体光接收元件的光入射面倾斜地照射光，并使至少一部分光在光入射面照射光吸收层。

    Semiconductor light-receiving module capable of converting light into current efficiently at light absorbing layer
    4.
    发明申请
    Semiconductor light-receiving module capable of converting light into current efficiently at light absorbing layer 失效
    能够在光吸收层有效地将光转换成电流的半导体光接收模块

    公开(公告)号：US20050145966A1

    公开(公告)日：2005-07-07

    申请号：US11054746

    申请日：2005-02-09

    申请人： Kenji Kawano ,  Hiroaki Yoshidaya ,  Jun Hiraoka ,  Yuichi Sasaki ,  Eiji Kawazura ,  Satoshi Matsumoto

    发明人： Kenji Kawano ,  Hiroaki Yoshidaya ,  Jun Hiraoka ,  Yuichi Sasaki ,  Eiji Kawazura ,  Satoshi Matsumoto

    IPC分类号： G02B6/12 ,  G02B6/42 ,  H01L31/0232 ,  H01L31/0203

    CPC分类号： G02B6/12004 ,  G02B6/42 ,  G02B6/4295 ,  H01L31/02327

    摘要： A semiconductor light-receiving module includes a semiconductor light-receiving element and an incident light direction device. The semiconductor light-receiving element includes a substrate, at least a light absorbing layer and an upper cladding layer formed sequentially on the substrate, a light incident facet formed at least at one facet of the substrate and the light absorbing layer, and electrodes which output an electric signal generated by absorption of the light entering from the light incident facet in the light absorbing layer. The incident light direction device directs to irradiate the light obliquely to the light incident facet of the semiconductor light-receiving element, and to cause at least part of the light to irradiate the light absorbing layer at the light incident facet.

    摘要翻译： 半导体光接收模块包括半导体光接收元件和入射光方向装置。 半导体光接收元件包括基板，至少在基板上形成的光吸收层和上包层，至少在基板和光吸收层的一个面上形成的光入射面，以及输出的电极 通过吸收从光吸收层中的光入射小面入射的光产生的电信号。 入射光方向装置指向与半导体光接收元件的光入射面倾斜地照射光，并使至少一部分光在光入射面照射光吸收层。

    Semiconductor light receiving element provided with acceleration spacer layers between plurality of light absorbing layers and method for fabricating the same
    5.
    发明授权
    Semiconductor light receiving element provided with acceleration spacer layers between plurality of light absorbing layers and method for fabricating the same 失效
    在多个光吸收层之间设置有加速间隔层的半导体光接收元件及其制造方法

    公开(公告)号：US06756609B2

    公开(公告)日：2004-06-29

    申请号：US10312470

    申请日：2002-12-23

    申请人： Kenji Kawano ,  Hiroaki Yoshidaya ,  Jun Hiraoka ,  Yuichi Sasaki

    发明人： Kenji Kawano ,  Hiroaki Yoshidaya ,  Jun Hiraoka ,  Yuichi Sasaki

    IPC分类号： H01L3300

    CPC分类号： H01L31/101

    摘要： A semiconductor light receiving element has an n electrode, an n-type semiconductor doped layer or a non-doped layer provided above the n electrode, a semiconductor light absorbing layer provided above the n-type semiconductor doped layer or the non-doped layer, a p-type semiconductor doped layer provided above the semiconductor light absorbing layer, and a p electrode provided above the p-type semiconductor doped layer. The semiconductor light absorbing layer has at least two layer portions doped to p-type, and a spacer layer for acceleration which is formed from a semiconductor material sandwiched by the two layer portions and which makes electrons and positive holes generated by incident light being absorbed at the semiconductor light absorbing layer accelerate and run.

    摘要翻译： 半导体光接收元件具有设置在n电极上方的n电极，n型半导体掺杂层或非掺杂层，设置在n型半导体掺杂层或非掺杂层上方的半导体光吸收层， 设置在半导体光吸收层上方的p型半导体掺杂层，以及设置在p型半导体掺杂层上方的p型电极。 半导体光吸收层具有掺杂到p型的至少两个层部分和由夹在两层部分之间的半导体材料形成的用于加速的间隔层，并且使由入射光产生的电子和正空穴被吸收在 半导体光吸收层加速运行。