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公开(公告)号:US20240099155A1
公开(公告)日:2024-03-21
申请号:US18464350
申请日:2023-09-11
Applicant: Kioxia Corporation
Inventor: Masahiro KOIKE , Michael Arnaud QUINSAT , Nobuyuki UMETSU , Tsutomu NAKANISHI , Agung SETIADI , Megumi YAKABE , Shigeyuki HIRAYAMA , Masaki KADO , Yasuaki OOTERA , Shiho NAKAMURA , Susumu HASHIMOTO , Tsuyoshi KONDO
CPC classification number: H10N50/80 , G11C11/161 , G11C11/1673 , G11C11/1675 , H10B61/00 , H10N50/10
Abstract: A memory includes: a magnet including a first and second portions adjacent in a first direction. The first portion has a first dimension in a second direction at a first position at which a dimension of the magnet in the second direction is maximum, the second direction perpendicular to the first direction, the second portion has a second dimension in the second direction at a second position at which a dimension of the magnet in the second direction is minimum, the second dimension smaller than the first dimension, the first portion is continuous to the second portion via a third position between the first and second positions, a curve corresponding to an outer of the magnet extends between the first and third positions, and the curve passes through a side closer to the central axis of the magnet than a straight line connecting the first and second positions.
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公开(公告)号:US20240274176A1
公开(公告)日:2024-08-15
申请号:US18439612
申请日:2024-02-12
Applicant: Kioxia Corporation
Inventor: Naoharu SHIMOMURA , Tsuyoshi KONDO , Michael ARNAUD QUINSAT , Yasuaki OOTERA , Masaki KADO , Yoshihiro UEDA , Tsutomu NAKANISHI , Nobuyuki UMETSU , Susumu HASHIMOTO , Shiho NAKAMURA
CPC classification number: G11C11/161 , H10B61/22 , H10N50/10 , H10N50/80
Abstract: A magnetic memory includes a plurality of cylindrical magnetic members each extending along a first direction and having a first end portion and a second end portion; and a magnetoresistive element that includes: a magnetization variable layer with a variable magnetization direction, a magnetization fixed layer with a fixed magnetization direction, and a non-magnetic layer between the magnetization variable layer and the magnetization fixed layer. When viewed in the first direction, the magnetoresistive element overlaps a part of the first end portion of one of the magnetic members. The magnetization direction of the magnetization variable layer intersects with the magnetization direction of the magnetization fixed layer at an angle larger than 0 degrees and smaller than 180 degrees.
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公开(公告)号:US20240055028A1
公开(公告)日:2024-02-15
申请号:US18179280
申请日:2023-03-06
Applicant: Kioxia Corporation
Inventor: Nobuyuki UMETSU , Tsuyoshi KONDO , Naoharu SHIMOMURA , Shiho NAKAMURA , Susumu HASHIMOTO , Yasuaki OOTERA , Yoshihiro UEDA
CPC classification number: G11C5/08 , H10B61/00 , H10N50/10 , G11C11/1675
Abstract: According to one embodiment, a magnetic memory includes a first magnetic member extending along a first direction. First and second wires extend along a second direction. The first magnetic member is located between the first and second wirings in plan view from the first direction. A second magnetic member has a first portion above the first and second wirings, a second portion between the first and second wirings, and a third portion below the first and second wirings. At least one of the first portion or the third portion of the second magnetic member has a lower saturation magnetization than the second portion.
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公开(公告)号:US20220302370A1
公开(公告)日:2022-09-22
申请号:US17447360
申请日:2021-09-10
Applicant: Kioxia Corporation
Inventor: Nobuyuki UMETSU , Yasuaki OOTERA , Masaki KADO , Michael ARNAUD QUINSAT , Naoharu SHIMOMURA , Tsutomu NAKANISHI , Shiho NAKAMURA , Susumu HASHIMOTO , Tsuyoshi KONDO
Abstract: A magnetic memory according to en embodiment includes: a first and second wirings; an insulator portion; a magnetic member including: a first portion electrically connected to the first wiring; a second portion electrically connected to the second wiring; and a third portion disposed between the first and second portions, the magnetic member extending in a first direction from the first portion toward the second portion and surrounding the insulator portion, and in a cross-section parallel to the first direction and including part of the magnetic member and part of the insulator portion, a curvature of the first portion being smaller than a curvature of the third portion, a length of the first portion in the first direction being greater than half a length of the third portion in the first direction; and a control circuit electrically connected to the first and second wirings.
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公开(公告)号:US20220302208A1
公开(公告)日:2022-09-22
申请号:US17467095
申请日:2021-09-03
Applicant: Kioxia Corporation
Inventor: Tsutomu NAKANISHI , Yasuaki OOTERA , Nobuyuki UMETSU , Michael Arnaud QUINSAT , Masaki KADO , Susumu HASHIMOTO , Shiho NAKAMURA , Naoharu SHIMOMURA , Tsuyoshi KONDO , Mutsumi OKAJIMA
Abstract: A storage device includes: a memory unit and a first pillar. The first pillar includes: a first region having a third portion between a first and a second portion respectively having a first and a second maximum diameter, and having a first minimum diameter, the first and second portions defining a first distance; a second region having a sixth portion between a fourth and a fifth portion respectively having a third and a fourth maximum diameter, and having a second minimum diameter, the fourth and fifth portions defining a second distance; and a third region between the first and second regions, having a ninth portion between a seventh and an eighth portion respectively having a fifth and a sixth maximum diameter, and having a third minimum diameter, the seventh and eighth portions defining a third distance shorter than each of the first and second distances.
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公开(公告)号:US20230180484A1
公开(公告)日:2023-06-08
申请号:US17845876
申请日:2022-06-21
Applicant: KIOXIA CORPORATION
Inventor: Shiho NAKAMURA , Tsuyoshi KONDO , Nobuyuki UMETSU
CPC classification number: H01L27/228 , G11C5/08 , H01L43/02 , H01L43/12
Abstract: A magnetic memory includes first and second wirings, a magnetic memory line including first and second portions and extending along a first direction, the second portion electrically connected to the first wiring, and a first magnetic member electrically connected to the first portion and the second wiring and including first and second magnetic portions each having an annular shape and overlapping an end portion of the first portion of the memory line as viewed from the first direction, a third magnetic portion having a cylindrical shape and extending between an inner end of the first magnetic portion and an inner end of the second magnetic portion, and a fourth magnetic portion having a cylindrical shape and extending between an outer end of the first magnetic portion and an outer end of the second magnetic portion.
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