公开(公告)号：US20240315019A1

公开(公告)日：2024-09-19

申请号：US18671074

申请日：2024-05-22

申请人： Kioxia Corporation

发明人： Hideto TAKEKIDA ,  Yosuke MURAKAMI ,  Keisuke NAKATSUKA ,  Yefei HAN

IPC分类号： H10B43/10 ,  H10B43/20 ,  H10B43/50

CPC分类号： H10B43/10 ,  H10B43/20 ,  H10B43/50

摘要： A semiconductor storage device of an embodiment includes a first conductive layer, a second conductive layer, a first conductive pillar, a first semiconductor layer, and a first storage layer. The first conductive layer extends in a first direction. The second conductive layer is along the first conductive layer in a third direction intersecting the first direction. The second conductive layer extends in the first direction. The first conductive pillar penetrates the first conductive layer and the second conductive layer in the third direction. The first semiconductor layer is in contact with the first conductive layer and the second conductive layer. The first semiconductor layer faces the first conductive pillar in the first direction. The first storage layer is between the first semiconductor layer and the first conductive pillar.

公开(公告)号：US20220085058A1

公开(公告)日：2022-03-17

申请号：US17190871

申请日：2021-03-03

申请人： Kioxia Corporation

发明人： Yosuke MURAKAMI ,  Satoshi NAGASHIMA ,  Nobuyuki MOMO ,  Takayuki ISHIKAWA ,  Yusuke ARAYASHIKI

IPC分类号： H01L27/11582 ,  H01L27/11556 ,  H01L27/11519 ,  H01L27/11565 ,  H01L23/00 ,  H01L27/11524 ,  H01L27/1157 ,  G11C7/18

摘要： A semiconductor storage device includes a substrate, a first wiring, a second wiring, a third wiring, a fourth wiring, a charge storage unit. The first wiring extends in a first direction along a surface of the substrate. The second wiring is aligned with the first wiring in a second direction intersecting with the first direction and extends in the first direction. The third wiring is in contact with the first wiring and the second wiring and includes a semiconductor. The fourth wiring is located between the first wiring and the second wiring, extends in a third direction intersecting with the first direction and the second direction, and is aligned with the third wiring in at least the first direction. The charge storage unit is located between the third wiring and the fourth wiring.