公开(公告)号：US20160365501A1

公开(公告)日：2016-12-15

申请号：US15158158

申请日：2016-05-18

Applicant: Korea Institute of Science and Technology

Inventor： Chong Yun KANG ,  Seok Jin YOON ,  Jin Sang KIM ,  Ji-Won CHOI ,  Seung Hyub BAEK ,  Seong Keun KIM ,  Woo-Suk JUNG ,  Beomjin KWON

IPC: H01L41/053 ,  H01L41/18 ,  H01L41/113

CPC classification number: H01L41/113

Abstract: Disclosed is a curved piezoelectric device maximizing an electrical potential of the piezoelectric material corresponding to an external mechanical stress. The curved piezoelectric device includes: a curved substrate; and a piezoelectric material provided on one surface or both surfaces of the curved substrate, wherein when a stress is applied, a neutral plane in which a compressive stress and a tensile stress are balanced is located in the curved substrate, wherein the location of the neutral plane is determined by y1 and y2 of Equation 1 or 2 below, and wherein the location of the neutral plane is controllable by adjusting a thickness (d), a sectional area (A) and a Young's modulus (E) of each of the curved substrate and the piezoelectric material: wherein y 1 = E 2  d 2  ( d 1 + d 2 ) 2  ( E 1  d 1 + E 2  d 2 ) , y 2 = E 1  d 1  ( d 1 + d 2 ) 2  ( E 1  d 1 + E 2  d 2 )   and Equation   1 y 1 = E 2  A 2  ( A 1 + A 2 ) 2  ( E 1  A 1 + E 2  A 2 ) , y 2 = E 1  A 1  ( A 1 + A 2 ) 2  ( E 1  A 1 + E 2  A 2 ) . Equation   2

公开(公告)号：US20160133917A1

公开(公告)日：2016-05-12

申请号：US14802715

申请日：2015-07-17

Applicant: Korea Institute of Science and Technology

Inventor： Ji-Won CHOI ,  Seok Jin YOON ,  Jin Sang KIM ,  Chong Yun KANG ,  Seung Hyub BAEK ,  Seong Keun KIM ,  Beomjin KWON ,  Haena YIM

IPC: H01M4/04 ,  H01M10/659 ,  H01M4/58 ,  H01M10/04 ,  H01M4/525 ,  H01M4/505

CPC classification number: H01M4/0402 ,  H01M4/0404 ,  H01M4/505 ,  H01M4/525 ,  H01M4/5825 ,  H01M10/0436 ,  H01M10/052 ,  H01M10/058 ,  H01M10/659

Abstract: A method of fabricating a cathode for a thin film battery includes depositing a cathode active material on a substrate, and crystallizing the cathode active material by irradiating laser onto the cathode active material. The cathode active material may be deposited on the substrate at normal temperature, and a light and easily processable polymer substrate may be used by crystallizing the cathode active material at low temperature using laser. A thin film battery including the cathode fabricated by the above method has excellent charging/discharging characteristics such as high discharge capacity.

Abstract translation: 一种薄膜电池用阴极的制造方法，其特征在于，在基板上沉积正极活性物质，通过在正极活性物质上照射激光来使阴极活性物质结晶化。 阴极活性材料可以在常温下沉积在基板上，并且可以通过使用激光在低温下使阴极活性材料结晶来使用轻且容易加工的聚合物基底。 包括通过上述方法制造的阴极的薄膜电池具有优异的充电/放电特性，例如高放电容量。