公开(公告)号：US20210005609A1

公开(公告)日：2021-01-07

申请号：US16854471

申请日：2020-04-21

Applicant: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY

Inventor： Sang Tae KIM ,  Hyun-Cheol SONG ,  Seung Hyub BAEK ,  Ji-Won CHOI ,  Jin Sang KIM ,  Chong Yun KANG ,  Seong Keun KIM

IPC: H01L27/108 ,  H01L21/285 ,  H01L49/02

Abstract: A method of manufacturing an electrode layer and a method of manufacturing a capacitor using the same are provided. The method of manufacturing the electrode layer includes performing a first sub-cycle sequentially providing a tin precursor and an oxygen source on a substrate, performing a second sub-cycle sequentially providing a tin precursor, a tantalum precursor, and an oxygen source on the substrate on which the first sub-cycle is performed, and repeating a cycle including the first sub-cycle and the second sub-cycle to form a tantalum-doped tin oxide layer on the substrate. A tantalum concentration in the tantalum-doped tin oxide layer is determined by the tin precursor provided in the second sub-cycle.

公开(公告)号：US20180358146A1

公开(公告)日：2018-12-13

申请号：US15990824

申请日：2018-05-29

Applicant: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY

Inventor： Ji-Won CHOI ,  Jin Sang KIM ,  Chong Yun KANG ,  Seong Keun KIM ,  Seung Hyub BAEK ,  Sang Tae KIM ,  Won Jae LEE ,  Narendra Singh PARMAR ,  Young-Shin LEE

IPC: H01B1/22 ,  H01L29/20 ,  H01L21/288

Abstract: The present disclosure relates to a paste for ohmic contact to p-type semiconductor, including a metal oxide and a binder, wherein the metal oxide is a rhenium oxide or a molybdenum oxide.

公开(公告)号：US20240180041A1

公开(公告)日：2024-05-30

申请号：US18522771

申请日：2023-11-29

Applicant: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY

Inventor： Seung Hyub BAEK ,  Soo Young JUNG ,  Sunghoon HUR ,  Ji-Soo JANG ,  Jungho YOON ,  Hyun-Cheol SONG ,  Seong Keun KIM ,  Chong Yun KANG ,  Ji-Won CHOI ,  Jin Sang KIM

IPC: H10N30/00 ,  C30B23/04 ,  C30B29/22 ,  H10N30/072 ,  H10N30/082 ,  H10N30/853

CPC classification number: H10N30/10513 ,  C30B23/04 ,  C30B29/22 ,  H10N30/072 ,  H10N30/082 ,  H10N30/8536 ,  H10N30/8548 ,  H10N30/8561

Abstract: The present invention relates to a heterojunction semiconductor substrate having excellent dielectric properties, a method of manufacturing the same, and an electronic device using the same. The present invention provides a heterojunction semiconductor substrate with improved interlayer adhesion, low leakage current, and excellent dielectric properties that maintain strength in a ferroelectric fatigue experiment by interposing a metal layer and a conductive metal oxide layer on a semiconductor substrate to form an epitaxial oxide thin film layer composed of perovskite piezoelectric oxide. The heterojunction semiconductor substrate can be applied to sensors, actuators, transducers, or MEMS devices that use the high functionality of the high-quality epitaxial oxide thin film layer, including applications in electronic and optical devices.

公开(公告)号：US20190316968A1

公开(公告)日：2019-10-17

申请号：US16451736

申请日：2019-06-25

Applicant: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY ,  UNIST(ULSAN NATIONAL INSTITUTE OF SCIENCE AND TECHNOLOGY)

Inventor： Seung Hyub BAEK ,  Tae Hyeon KIL ,  Sanghyeon KIM ,  Won Jun CHOI ,  Jeong Min BAIK ,  Ki-Suk LEE

IPC: G01J5/22 ,  H01L49/02 ,  H01C17/12 ,  H01C7/00

Abstract: Disclosed is a resistor thin film for micro-bolometer for growth of a vanadium dioxide (VO2) thin film in monoclinic VO2 crystal phase by deposition of VO2 on oxide with perovskite structure and a method for fabricating the same, and the resistor thin film for micro-bolometer according to the present disclosure includes a silicon substrate, an oxide thin film with perovskite structure formed on the silicon substrate, and a VO2 thin film in monoclinic crystal phase formed on the oxide thin film with perovskite structure.

公开(公告)号：US20130314842A1

公开(公告)日：2013-11-28

申请号：US13677664

申请日：2012-11-15

Applicant: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY

Inventor： Chong Yun KANG ,  Min Gyu KANG ,  Seok Jin YOON ,  Ji Won CHOI ,  Seung Hyub BAEK ,  Jin Sang KIM

IPC: H01G4/06 ,  H05K5/00

CPC classification number: H01G4/06 ,  H01G4/005 ,  H01G4/085 ,  H01G4/33 ,  H01L28/60 ,  H05K5/0091

Abstract: Provided are a thin film condenser for high-density packaging, a method for manufacturing the same and a high-density package substrate. The thin film condenser for high-density packaging, includes: a support substrate; a lower electrode formed on the support substrate; a dielectric thin film formed on the lower electrode; and an upper electrode formed on the dielectric thin film. Provided also is a method for manufacturing the same. The high-density package substrate, includes: at least two stacked substrates; thin film condensers embedded in the stacked substrates; an internal connection electrode formed in the stacked substrates and connecting the thin film condensers in series or in parallel; a surface electrode formed on the surface of the outermost substrate among the stacked substrates and connected to the internal connection electrode; and an integrated circuit connected to the surface electrode via a bump.

Abstract translation: 提供一种用于高密度封装的薄膜电容器，其制造方法和高密度封装衬底。 用于高密度封装的薄膜冷凝器包括：支撑基板; 形成在所述支撑基板上的下电极; 形成在下电极上的电介质薄膜; 以及形成在电介质薄膜上的上电极。 还提供其制造方法。 高密度封装基板包括：至少两个堆叠的基板; 嵌入在堆叠的基板中的薄膜电容器; 内部连接电极，形成在堆叠的基板中并串联或并联连接薄膜电容器; 表面电极，形成在所述层叠基板的最外侧基板的表面上，与所述内部连接用电极连接; 以及通过凸块与表面电极连接的集成电路。

公开(公告)号：US20230145077A1

公开(公告)日：2023-05-11

申请号：US17961995

申请日：2022-10-07

Applicant: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY

Inventor： Seung Hyub BAEK ,  Hyung-Jin CHOI ,  Sung Hoon HUR ,  Ji-Soo JANG ,  Jung Ho YOON ,  Seong Keun KIM ,  Hyun Cheol SONG ,  Chong Yun KANG ,  Ji-Won CHOI ,  Jin Sang KIM ,  Byung Chul Lee

IPC: C30B33/02 ,  H01L41/319 ,  C30B29/22 ,  C30B23/02

CPC classification number: C30B33/02 ,  H01L41/319 ,  C30B29/22 ,  C30B23/025 ,  H01L41/1871

Abstract: Disclosed is a method of manufacturing an epitaxy oxide thin film of enhanced crystalline quality, and an epitaxy oxide thin film manufactured thereby according to the present invention. With respect to the manufacturing method of the epitaxy oxide thin film, which epitaxially grows an orientation film with an oxide capable of being oriented to (001), (110), and (111) on a single crystal Si substrate, because time required for raising a temperature of the orientation film up to an annealing temperature at room temperature is extremely minimized, thermal stress arising from the large difference in thermal expansion coefficients between the substrate and the orientation film is controlled, so crystalline quality of the epitaxy oxide thin film can be enhanced. Moreover, various epitaxial functional oxides are integrated into the thin film of enhanced crystalline quality so that a novel electronic device can be embodied.

公开(公告)号：US20230058826A1

公开(公告)日：2023-02-23

申请号：US17889876

申请日：2022-08-17

Applicant: Korea Institute of Science and Technology

Inventor： Hyun Cheol SONG ,  Chong Yun KANG ,  Sung Hoon HUR ,  Seung Hyub BAEK ,  Seong Keun KIM ,  Ji Won CHOI ,  Jung Ho YOON ,  Hyun Soo KIM

IPC: B60C23/04 ,  H02N2/18

Abstract: Provided is an apparatus for generating direct current using continuous polarization change of piezoelectric materials. For example, a piezoelectric direct current generator includes a first electrode, a polarized piezoelectric material layer disposed on a first surface of the first electrode, and a second electrode disposed on a surface opposite to the first electrode and coupled to move along the piezoelectric material layer while pressing the piezoelectric material layer.

公开(公告)号：US20190333858A1

公开(公告)日：2019-10-31

申请号：US16225432

申请日：2018-12-19

Applicant: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY ,  INSTITUTE FOR BASIC SCIENCE ,  ULSAN NATIONAL INSTITUTE OF SCIENCE AND TECHNOLOGY

Inventor： Seong Keun KIM ,  Woo Chul LEE ,  Sang Tae KIM ,  Hyun Cheol SONG ,  Seung Hyub BAEK ,  Ji Won CHOI ,  Jin Sang KIM ,  Chong Yun KANG ,  Christopher W. BIELAWSKI ,  Jung Hwan YUM ,  Eric S. LARSEN

IPC: H01L23/532 ,  H01L49/02 ,  H01L27/108

Abstract: Provided is a dielectric layer that has a rock salt structure in a room temperature stable phase. The dielectric layer is made of a compound having a chemical formula of BexM1-xO, where M includes one of alkaline earth metals and x has a value greater than 0 and less than 0.5.

公开(公告)号：US20250079461A1

公开(公告)日：2025-03-06

申请号：US18816387

申请日：2024-08-27

Applicant: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY

Inventor： Ji-Won CHOI ,  Haena YIM ,  Yaelim HWANG ,  Chong Yun KANG ,  Seung Hyub BAEK ,  Seong Keun KIM ,  Hyun-Cheol SONG ,  Jungho YOON ,  Ji-Soo JANG ,  Sunghoon HUR

IPC: H01M4/58 ,  C01B21/082 ,  H01M4/02 ,  H01M10/0525

Abstract: The present invention relates to a transparent anode active material having excellent light transmittance and electrical conductivity characteristics and a manufacturing method thereof, and a lithium ion battery and an all-solid-state lithium thin-film battery based on the same and having excellent charge/discharge capacity and charge/discharge rate, wherein the transparent anode active material according to the present invention is characterized by comprising a material of the following Chemical Formula 1: AgxSiOyN wherein x is 0

公开(公告)号：US20200076331A1

公开(公告)日：2020-03-05

申请号：US16296218

申请日：2019-03-08

Applicant: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY

Inventor： Hyun-Cheol SONG ,  Chong Yun KANG ,  Jin Sang KIM ,  Ji-won CHOI ,  Seung Hyub BAEK ,  Seong Keun KIM ,  Sang Tae KIM ,  Youn-hwan SHIN

IPC: H02N2/18 ,  H01L41/053 ,  H01L41/113 ,  H01L41/04

Abstract: Provided is a self-resonance tuning piezoelectric energy harvester. The self-resonance tuning piezoelectric energy harvester includes a piezoelectric beam which extends along a horizontal direction, a fixing element which fixes two ends of the piezoelectric beam, and a mass which is connected to the piezoelectric beam movably along the piezoelectric beam, wherein the mass includes a through-hole through which the piezoelectric beam passes, and makes the movement through the through-hole. According to the principle of continuous movement to the resonance position, the mass of the self-resonance tuning piezoelectric energy harvester induces the piezoelectric beam to generate displacement to the maximum and maximize the electricity production capacity of the piezoelectric energy harvester.