公开(公告)号：US20210183975A1

公开(公告)日：2021-06-17

申请号：US17122811

申请日：2020-12-15

Applicant: LG Display Co., Ltd.

Inventor： Dohyung LEE ,  ChanYong JEONG ,  JuHeyuck BAECK

IPC: H01L27/32

Abstract: A thin film transistor (TFT) array substrate for an electronic device includes a first active layer of a first TFT which is an oxide semiconductor layer including molybdenum, a second active layer of a second TFT which is an oxide semiconductor layer and disposed on a buffer layer to be spaced apart from the first active layer of the first TFT, a first gate insulating film overlapping the first active layer and the second active layer, a first gate electrode of the first TFT overlapping the first gate insulating film and a part of the first active layer, and a second gate electrode of the second TFT overlapping the first gate insulating film, spaced apart from the first gate electrode, and overlapping a part of the second active layer. Accordingly, the first TFT has a high subthreshold parameter, and the second TFT has high mobility.

公开(公告)号：US20210183898A1

公开(公告)日：2021-06-17

申请号：US17113845

申请日：2020-12-07

Applicant: LG Display Co., Ltd.

Inventor： ChanYong JEONG ,  Dohyung LEE ,  JuHeyuck BAECK

IPC: H01L27/12

Abstract: Provided are a transistor array substrate and an electronic device. A first active layer includes a first area, a second area spaced apart from the first area, and a channel area provided between the first area and the second area. A gate insulating film is disposed on the first active layer. A gate electrode is disposed on the gate insulating film to overlap a portion of the channel area of the first active layer. The gate electrode overlaps a portion of at least one area of the first and second areas of the first active layer. Deteriorations in the channel area are prevented.

公开(公告)号：US20200176603A1

公开(公告)日：2020-06-04

申请号：US16502312

申请日：2019-07-03

Applicant: LG Display Co., Ltd.

Inventor： JuHeyuck BAECK ,  Dohyung LEE ,  ChanYong JEONG

IPC: H01L29/786 ,  H01L29/66 ,  H01L27/12 ,  H01L27/32

Abstract: A thin-film transistor, a display device including a thin-film transistor, and a method of manufacturing a thin-film transistor are provided. A thin-film transistor includes: a semiconductor layer including: a first oxide semiconductor layer including gallium (Ga), a second oxide semiconductor layer, and a silicon semiconductor layer between the first oxide semiconductor layer and the second oxide semiconductor layer, and a gate electrode spaced apart from the semiconductor layer and partially overlapping at least a part of the semiconductor layer.

公开(公告)号：US20210193839A1

公开(公告)日：2021-06-24

申请号：US17115603

申请日：2020-12-08

Applicant: LG Display Co., Ltd.

Inventor： JuHeyuck BAECK ,  Dohyung LEE ,  ChanYong JEONG

IPC: H01L29/786 ,  H01L27/32

Abstract: Provided are a thin film transistor array substrate and an electronic device including the same. More specifically, the thin film transistor array includes a first active layer including a first area, a second area spaced apart from the first area, and a channel area provided between the first area and the second area, a first gate electrode disposed on the first active layer, and a second gate electrode disposed on the same layer as the first gate electrode to overlap one end of the first gate electrode and to which a signal corresponding to a signal applied to the first gate electrode is applied. Therefore, it is possible to have a structure for simultaneously controlling the threshold voltage, mobility, and subthreshold (S) parameter of a thin film transistor.

公开(公告)号：US20250048738A1

公开(公告)日：2025-02-06

申请号：US18783354

申请日：2024-07-24

Applicant: LG Display Co., Ltd.

Inventor： Dohyun KWAK ,  Dohyung LEE ,  HongRak CHOI ,  GaWon YANG

IPC: H01L27/12

Abstract: A thin film transistor and a display apparatus including the same are provided. The thin film transistor includes an active layer, a sub-conductive material layer on the active layer, a gate electrode spaced apart from the active layer and at least partially overlapping the active layer, and a conductive material layer on the active layer. The active layer includes a channel portion partially overlapping the gate electrode, a first connection portion connected to one side of the channel portion, and a second connection portion connected to the other side of the channel portion. The sub-conductive material layer includes a source conductive material layer on the first connection portion, and a drain conductive material layer on the second connection portion. The conductive material layer is disposed on the channel portion and is disposed on the same layer as the sub-conductive material layer.

公开(公告)号：US20240188331A1

公开(公告)日：2024-06-06

申请号：US18376565

申请日：2023-10-04

Applicant: LG Display Co., Ltd.

Inventor： HongRak CHOI ,  JuHeyuck BAECK ,  Dohyung LEE ,  Younghyun KO ,  ChanYong JEONG

IPC: H10K59/121 ,  G09G3/32

CPC classification number: H10K59/1216 ,  G09G3/32 ,  H10K59/1213 ,  G09G2300/0842

Abstract: A display panel includes a substrate, a first storage capacitor electrode disposed on the substrate, a buffer layer disposed on the first storage capacitor electrode, an active layer disposed on the buffer layer and including a first area, a second area, and a channel area disposed between the first area and the second area, a gate insulation film disposed on the active layer, a gate electrode disposed on the gate insulation film and overlapping with the channel area, an inter-layer insulation film disposed on the gate electrode, and a metal layer disposed on the inter-layer insulation film, wherein the first area and the second area of the active layer are conductive areas, and wherein a conductive auxiliary layer overlapping with at least a portion of each of the first area and the second area and not overlapping with the channel area is included on the substrate, thereby mitigating the step in the area where the storage capacitor electrodes are disposed to prevent a short circuit.

公开(公告)号：US20230145843A1

公开(公告)日：2023-05-11

申请号：US17876101

申请日：2022-07-28

Applicant: LG DISPLAY CO., LTD.

Inventor： HongRak CHOI ,  Dohyung LEE ,  ChanYong JEONG ,  KyungChul OK

IPC: H01L27/12

CPC classification number: H01L27/1225 ,  H01L27/1255

Abstract: A display device includes a main active layer positioned on a substrate includes a channel area, a first conductorized area positioned on a first side of the channel area, and a second conductorized area positioned on a second side of the channel area, a sacrificial active layer is positioned on the main active layer, a gate insulating film is positioned on the sacrificial active layer, a first electrode is positioned on the sacrificial active layer, a portion of the first electrode overlaps the first conductorized area of the main active layer, a second electrode is positioned on the sacrificial active layer, a portion of the second electrode overlaps the second conductorized area of the main active layer, and a third electrode positioned on the gate insulating film overlaps the channel area of the main active layer.

公开(公告)号：US20200184896A1

公开(公告)日：2020-06-11

申请号：US16690815

申请日：2019-11-21

Applicant: LG Display Co., Ltd.

Inventor： Dohyung LEE ,  ChanYong JEONG ,  JuHeyuck BAECK ,  KwangIl CHUN

IPC: G09G3/3266 ,  H01L27/12 ,  G09G3/3241

Abstract: A display device and a signal inversion device are provided. A display device includes: a display panel including: sub-pixels, and scan lines respectively connected to each of the sub-pixels, and light emission control lines respectively connected to each of the sub-pixels, a scan driver circuit for outputting respective scan signals to the scan lines, and a light emission control driver circuit for outputting respective light emission control signals to the light emission control lines, the light emission control driver circuit including: a resistance device electrically connected between: a first voltage node for receiving a first voltage, and an output node electrically connected to the light emission control lines, and a transistor electrically connected between the output node and a second voltage node for receiving a second voltage that is different from the first voltage, wherein an on/off operation of the transistor is controlled according to an input signal.

公开(公告)号：US20190123120A1

公开(公告)日：2019-04-25

申请号：US16221203

申请日：2018-12-14

Applicant: LG DISPLAY CO., LTD.

Inventor： Saeroonter OH ,  Jungsun BEAK ,  Seungmin LEE ,  Juheyuck BAECK ,  Hyunsoo SHIN ,  Jeyong JEON ,  Dohyung LEE

IPC: H01L27/32 ,  H01L27/12 ,  G09G3/3208

Abstract: The present disclosure relates to a thin film transistor substrate having two different types of thin film transistors on the same substrate and a display using the same. A disclosed display device may include a substrate, a first thin film transistor including a first semiconductor layer having a polycrystalline semiconductor material on the substrate, and a second thin film transistor including a second semiconductor layer including an oxide semiconductor material on the substrate. Both the first semiconductor layer and the second semiconductor layer may be disposed directly on a same underlying layer.

公开(公告)号：US20170330938A1

公开(公告)日：2017-11-16

申请号：US15531952

申请日：2015-12-16

Applicant: LG DISPLAY CO., LTD.

Inventor： Juheyuck BAECK ,  Jonguk BAE ,  Saeroonter OH ,  Dohyung LEE ,  Taeuk PARK

IPC: H01L29/10 ,  H01L29/66 ,  H01L29/417 ,  H01L29/786 ,  H01L27/12

CPC classification number: H01L29/1054 ,  H01L27/1225 ,  H01L29/41775 ,  H01L29/4908 ,  H01L29/66969 ,  H01L29/78606 ,  H01L29/78633 ,  H01L29/7869 ,  H01L29/78696

Abstract: a thin-film transistor according to an exemplary embodiment of the present invention comprises an active layer; an intermediate layer; a gate insulating film; a gate electrode; an interlayer insulating film; and source and drain electrodes. The active layer is positioned on a substrate, and the gate insulating film is positioned on the active layer. The gate electrode is positioned on the gate insulating film, and the interlayer insulating film is positioned on the gate electrode. The source and drain electrodes are positioned on the interlayer insulating film and connected to the active layer. The intermediate layer is positioned between the active layer and the gate insulating film, and made of an oxide semiconductor comprising a Group IV element.