公开(公告)号：US20150187750A1

公开(公告)日：2015-07-02

申请号：US14575722

申请日：2014-12-18

Applicant: LG DISPLAY CO., LTD.

Inventor： Dong Hyuk KIM ,  Dong Sun KIM ,  Won Joon HO ,  Chun Bae LIM

IPC: H01L27/02 ,  G02F1/1368 ,  H01L27/12 ,  G02F1/1362

CPC classification number: H01L27/0248 ,  G02F1/136204 ,  G02F1/136286 ,  G02F1/1368 ,  G09G3/3611 ,  G09G2330/04 ,  H01L27/0266 ,  H01L27/1222 ,  H01L27/1225 ,  H01L27/1259 ,  H01L29/78633

Abstract: Discussed are an antistatic device of a display device, which has a high electrostatic discharge (ESD) speed and reduces consumption power, and a method of manufacturing the same. The antistatic device can include a first switching thin film transistor (TFT) in which an active layer is formed of oxide, a second switching TFT in which an active layer is formed of oxide, and an equalizer TFT in which an active layer is formed of amorphous silicon.

Abstract translation: 讨论了具有高静电放电（ESD）速度和降低功耗的显示装置的抗静电装置及其制造方法。 抗静电装置可以包括其中有源层由氧化物形成的第一开关薄膜晶体管（TFT），其中有源层由氧化物形成的第二开关TFT，以及均衡器TFT，其中有源层由 非晶硅。

公开(公告)号：US20140319498A1

公开(公告)日：2014-10-30

申请号：US14266227

申请日：2014-04-30

Applicant: LG Display Co., Ltd.

Inventor： Jung Hyun LEE ,  Won Joon HO ,  Hong Jae SHIN

IPC: H01L29/78 ,  H01L27/32 ,  H01L27/12 ,  H01L29/786

CPC classification number: H01L29/7831 ,  H01L27/1214 ,  H01L27/3244 ,  H01L29/41733 ,  H01L29/786 ,  H01L29/78648

Abstract: A thin film transistor substrate provided with two gate electrodes comprises a thin film transistor including a first gate electrode formed on the substrate; an active layer formed on the first gate electrode; first and second electrodes formed on the active layer; and a second gate electrode formed on the first electrode, the second electrode, and the active layer, wherein the second gate electrode is provided with an opening formed in an area corresponding to at least a part of the second electrode.

Abstract translation: 设置有两个栅电极的薄膜晶体管基板包括薄膜晶体管，其包括形成在基板上的第一栅电极; 形成在所述第一栅电极上的有源层; 形成在有源层上的第一和第二电极; 以及形成在所述第一电极，所述第二电极和所述有源层上的第二栅电极，其中所述第二栅电极设置有形成在对应于所述第二电极的至少一部分的区域中的开口。