公开(公告)号：US20180175077A1

公开(公告)日：2018-06-21

申请号：US15828207

申请日：2017-11-30

Applicant: LG Display Co., Ltd.

Inventor： HyungJoon Koo ,  SeHee Park ,  Kwanghwan Ji ,  PilSang Yun ,  Jaeyoon Park ,  HongRak Choi

IPC: H01L27/12

CPC classification number: H01L27/1255 ,  H01L27/1225 ,  H01L27/124 ,  H01L27/1251 ,  H01L27/3262 ,  H01L27/3265 ,  H01L27/3272 ,  H01L29/78633 ,  H01L29/78648 ,  H01L29/7869

Abstract: Disclosed is a thin film transistor substrate which facilitates to realize a bottom gate structure where a gate electrode is disposed below an active layer, and to increase an area for a storage capacitor, and a display device including the same, wherein the thin film transistor substrate may include a light shielding layer, a buffer layer for covering the light shielding layer, and a driving transistor prepared on the buffer layer while being overlapped with the light shielding layer, and provided to supply a driving current to an organic light emitting device.

公开(公告)号：US20180151114A1

公开(公告)日：2018-05-31

申请号：US15828194

申请日：2017-11-30

Applicant: LG Display Co., Ltd.

Inventor： HongRak Choi ,  SeHee Park ,  PilSang Yun ,  HyungJoon Koo ,  Kwanghwan Ji ,  Jaeyoon Park

IPC: G09G3/325 ,  H01L27/32

Abstract: Disclosed are a transistor assembly, an organic light emitting display panel including the same, and an organic light emitting display device including the organic light emitting display panel, in which a first electrode of a switching transistor is used as a gate of a driving transistor.

公开(公告)号：US10236310B2

公开(公告)日：2019-03-19

申请号：US15824974

申请日：2017-11-28

Applicant: LG Display Co., Ltd.

Inventor： SeHee Park ,  HongRak Choi ,  PilSang Yun ,  HyungJoon Koo ,  Kwanghwan Ji ,  Jaeyoon Park

IPC: H01L27/12 ,  H01L27/32 ,  H01L29/49 ,  H01L29/78 ,  H01L51/56 ,  H01L29/417 ,  H01L27/07 ,  H01L29/786

Abstract: Disclosed are a transistor substrate, an organic light emitting display panel including the same, a method of manufacturing the transistor substrate, and an organic light emitting display device including the organic light emitting display panel, in which a driving transistor and a switching transistor are provided and each include an oxide semiconductor of which both ends are covered by an insulation layer, and a gate of the driving transistor and a gate of the switching transistor are provided on different layers.

公开(公告)号：US10453944B2

公开(公告)日：2019-10-22

申请号：US15858065

申请日：2017-12-29

Applicant: LG Display Co., Ltd.

Inventor： Jaeyoon Park ,  SeHee Park ,  HyungJoon Koo ,  Kwanghwan Ji ,  PilSang Yun

IPC: H01L29/66 ,  H01L29/786 ,  H01L27/12 ,  H01L29/04 ,  H01L21/02

Abstract: Disclosed are an oxide thin film transistor (TFT), a method of manufacturing the same, a display panel including the oxide TFT, and a display device including the display panel, in which a crystalline oxide semiconductor is provided on a metal insulation layer including metal through a metal organic chemical vapor deposition (MOCVD) process. The oxide TFT includes a metal insulation layer including metal, a crystalline oxide semiconductor adjacent to the metal insulation layer, a gate including metal, a gate insulation layer between the crystalline oxide semiconductor and the gate, a first conductor in one end of the crystalline oxide semiconductor, and a second conductor in another end of the crystalline oxide semiconductor.

公开(公告)号：US10290658B2

公开(公告)日：2019-05-14

申请号：US15828207

申请日：2017-11-30

Applicant: LG Display Co., Ltd.

Inventor： HyungJoon Koo ,  SeHee Park ,  Kwanghwan Ji ,  PilSang Yun ,  Jaeyoon Park ,  HongRak Choi

IPC: H01L27/12 ,  H01L27/32 ,  H01L29/786

Abstract: Disclosed is a thin film transistor substrate which facilitates to realize a bottom gate structure where a gate electrode is disposed below an active layer, and to increase an area for a storage capacitor, and a display device including the same, wherein the thin film transistor substrate may include a light shielding layer, a buffer layer for covering the light shielding layer, and a driving transistor prepared on the buffer layer while being overlapped with the light shielding layer, and provided to supply a driving current to an organic light emitting device.

公开(公告)号：US11037963B2

公开(公告)日：2021-06-15

申请号：US17012653

申请日：2020-09-04

Applicant: LG Display Co., Ltd.

Inventor： HyungJoon Koo

IPC: H01L27/12 ,  H01L29/786 ,  H01L29/66 ,  H01L29/49 ,  H01L29/24 ,  H01L21/02

Abstract: A thin film transistor and a method for manufacturing the same, and a display device including the same are disclosed, in which a P type semiconductor characteristic is realized using an active layer that includes a Sn based oxide. The thin film transistor comprises an active layer that includes an Sn(II)O based oxide; a metal oxide layer being in contact with one surface of the active layer; a gate electrode overlapped with the active layer; a gate insulating film provided between the gate electrode and the active layer; a source electrode being in contact with a first side of the active layer; and a drain electrode being in contact with a second side of the active layer.

公开(公告)号：US10741126B2

公开(公告)日：2020-08-11

申请号：US15828194

申请日：2017-11-30

Applicant: LG Display Co., Ltd.

Inventor： HongRak Choi ,  SeHee Park ,  PilSang Yun ,  HyungJoon Koo ,  Kwanghwan Ji ,  Jaeyoon Park

IPC: G09G3/325 ,  H01L27/32 ,  H01L27/12 ,  G09G3/3233 ,  G02F1/1676

Abstract: Disclosed are a transistor assembly, an organic light emitting display panel including the same, and an organic light emitting display device including the organic light emitting display panel, in which a first electrode of a switching transistor is used as a gate of a driving transistor.